Revue : [REVUE233]

Titre : Elsevier Science, Microelectronics Reliability, Volume 39, Issue 1, Pages 1-149, January 1999.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.

Volume : 39
Issue : 1
Pages : 1 - 149
Date : January 1999

[1] : Editorial, Page 1
Journal Format-PDF (42 K)

[2] : Recent advances in the theory of oxide¯semiconductor interfaces
Pages 3-14
Arthur H. Edwards and W. Beall Fowler
Lien : vide.pdf - | Article | Journal Format-PDF (515 K)

[3] : Dislocation multiplication inside contact holes
Pages 15-22
Y. F. Hsieh, Y. C. Hwang, J. M. Fu, Y. M. Tsou, Y. C. Peng and L. J. Chen
Lien : vide.pdf - | Article | Journal Format-PDF (910 K)

[4] : Al thermomigration applied to the formation of deep junctions for power device insulation
Pages 23-27
J-M. Dilhac, L. Cornibert and C. Ganibal
Lien : vide.pdf - | Article | Journal Format-PDF (475 K)

[5] : An insulated gate bipolar transistor employing the plugged n+ anode
Pages 29-33
J. H. Chun, B. H. Lee, D. S. Byeon, D. Y. Kim, M. K. Han and Y. I. Choi
Lien : private/CHUN1.pdf - | Article | Journal Format-PDF (257 K)

  [1] :  [PAP311]  J.H. CHUN, B.H. LEE, D.S. BYEON, D.Y. KIM, M.K. HAN, Y.I. CHOI, An insulated gate bipolar transistor employing the plugged n+ anode, Microelectronics and Reliability, Vol. 39, No. 1, Jan. 1999, pp. 29-33.

[6] : Analysis of high temperature effects on performances and hot-carrier degradation in DC/AC stressed 0.35 m n-MOSFETs
Pages 35-44
A. Bravaix, D. Goguenheim, N. Revil, E. Vincent, M. Varrot and P. Mortini
Lien : vide.pdf - | Article | Journal Format-PDF (401 K)

[7] : Hot carrier effects in polycrystalline silicon thin-film transistors: analysis of electrical characteristics and noise performance modifications
Pages 45-52
L. Mariucci, A. Pecora, S. Giovannini, R. Carluccio, F. Massussi and G. Fortunato
Lien : vide.pdf - | Article | Journal Format-PDF (665 K)

[8] : A study on the leakage current of poly-Si TFTs fabricated by metal induced lateral crystallization
Pages 53-58
Tae-Hyung Ihn, Tae-Kyung Kim, Byung-Il Lee and Seung Ki Joo
Lien : vide.pdf - | Article | Journal Format-PDF (446 K)

[9] : A new failure mechanism by corrosion of tungsten in a tungsten plug process
Pages 59-68
S. Bothra, H. Sur and V. Liang
Lien : vide.pdf - | Article | Journal Format-PDF (967 K)

[10] : Failure analysis for RF characteristics of GaAs MESFETs, Pages 69-75
Jae Kyoung Mun, Chung-Hwan Kim, Jae Jin Lee and Kwang-Eui Pyun
Lien : vide.pdf - | Article | Journal Format-PDF (445 K)

[11] : High current bond design rules based on bond pad degradation and fusing of the wire
Pages 77-88
B. Krabbenborg
Lien : private/KRABBENBORG-01.pdf - 12 pages, 994 Ko.

[12] : A step forward in the transient thermal characterization of chips and packages
Pages 89-96
V. Szkely, M. Rencz and B. Courtois
Lien : vide.pdf - | Article | Journal Format-PDF (710 K)

[13] : Plasma cleaning of plastic ball grid array package
Pages 97-105
C. Lee, R. Gopalakrishnan, K. Nyunt, A. Wong, R. C. -E. Tan and J. W. -L. Ong
Lien : vide.pdf - | Article | Journal Format-PDF (611 K)

[14] : Ball grid array reliability assessment for aerospace applications
Pages 107-112
R. Ghaffarian and N. P. Kim
Lien : vide.pdf - | Article | Journal Format-PDF (587 K)

[15] : Interconnect resistance characteristics of several flip-chip bumping and assembly techniques
Pages 113-121
Earl Nicewarner
Lien : vide.pdf - | Article | Journal Format-PDF (480 K)

[16] : Thermal resistance degradation of surface mounted power devices during thermal cycling
Pages 123-132
J. Naderman and R. T. H. Rongen
Lien : vide.pdf - | Article | Journal Format-PDF (901 K)

  [1] : [SHEET318] J. NADERMAN, R.T.H. ROGEN, Thermal resistance degradation of surface mounted power devices during thermal cycling, Microelectronics and Reliability, Vol. 39, No 1, January 1999, pp. 123-132.

[17] : Investigation of MOSFET operation in bipolar mode
Pages 133-137
V. S. Pershenkov, V. V. Belyakov, S. V. Cherepko, I. N. Shvetzov-Shilovsky and V. V. Abramov
Lien : vide.pdf - | Article | Journal Format-PDF (153 K)

[18] : Avoidance of stiction in the release of highly boron doped micro-actuators fabricated using BESOI substrates, Pages 139-142
M. A. Rosa, S. Dimitrijev and H. B. Harrison
Lien : vide.pdf - | Article | Journal Format-PDF (253 K)

[19] : Book Review, Page 145
Journal Format-PDF (60 K)

[20] : Book Review, Page 147
Journal Format-PDF (60 K)

[21] : Book Review, Page 149
Journal Format-PDF (57 K)

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