Revue : [REVUE194]

Titre : Elsevier Science, Microelectronics Reliability, Volume 41, Issue 2, Pages 145-332, February 2001.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.

Volume : 41
Issue : 2
Pages : 145 - 332
Date : February 2001

[1] : Semiconductor devices for RF applications: evolution and current status,
Pages : 145-168
F. Schwierz and J. J. Liou
SummaryPlus | Article | Journal Format-PDF (492 K)

[2] : A comparison of early stage hot carrier degradation behaviour in 5 and 3 V
sub-micron low doped drain metal oxide semiconductor field effect
transistors, Pages 169-177
M. M. De Souza, J. Wang, S. Manhas, E. M. Sankara Narayanan and A. S.
Oates
SummaryPlus | Article | Journal Format-PDF (539 K)

[3] : Investigation of the surface silica layer on porous poly-Si thin films,
Pages : 179-184
H. Wong, P. G. Han, M. C. Poon and Y. Gao
SummaryPlus | Article | Journal Format-PDF (1071 K)

[4] : X-ray and UV controlled adjustment of MOS VLSI circuits threshold
voltages, Pages 185-191
M. N. Levin, V. R. Gitlin, S. G. Kadmensky, S. S. Ostrouhov and V. S.
Pershenkov
SummaryPlus | Article | Journal Format-PDF (188 K)

[5] : Unifying the thermal¯chemical and anode-hole-injection gate-oxide
breakdown models, Pages 193-199
Kin P. Cheung
Lien : vide.pdf - | Journal Format-PDF (241 K)

[6] : Analysis of the gate capacitance measurement technique and its application
for the evaluation of hot-carrier degradation in submicrometer MOSFETs,
Pages : 201-209
C. T. Hsu, M. M. Lau and Y. T. Yeow
SummaryPlus | Article | Journal Format-PDF (390 K)

[7] : Neutron-induced 10B fission as a major source of soft errors in high
density SRAMs, Pages 211-218
Robert C. Baumann and Eric B. Smith
Lien : vide.pdf - | Journal Format-PDF (321 K)

[8] : Investigations of impact ionization phenomena in advanced transistors and
speed-power improvement of BiMOS SRAM cells based on reverse base current
effect, Pages 219-228
Alexander N. Bubennikov and Andrey V. Zykov
SummaryPlus | Article | Journal Format-PDF (229 K)

[9] : Comparing migratory resistive short formation abilities of conductor
systems applied in advanced interconnection systems, Pages 229-237
Gábor Harsányi and George Inzelt
SummaryPlus | Article | Journal Format-PDF (497 K)

[10] : Improved estimation of the resistivity of pure copper and electrical
determination of thin copper film dimensions, Pages 239-252
Constance E. Schuster, Mark G. Vangel and Harry A. Schafft
Lien : vide.pdf - | Journal Format-PDF (189 K)

[11] : Investigation of deep traps in silicon¯germanium epitaxial base bipolar
transistors with a single polysilicon quasi self-aligned architecture,
Pages : 253-263
L. Militaru, A. Souifi, M. Mouis, A. Chantre and G. Brémond
SummaryPlus | Article | Journal Format-PDF (612 K)

[12] : Low-frequency noise in single¯poly bipolar transistors at low base current
density, Pages 265-271
Nicolas Valdaperez, Jean-Marc Routoure, Daniel Bloyet, Regis Carin, Serge
Bardy and Jacques Lebailly
SummaryPlus | Article | Journal Format-PDF (150 K)

[13] : Characterisation of emitter/base leakage currents in SiGe HBTs produced
using selective epitaxy, Pages 273-279
A. C. Lamb, J. F. W. Schiz, J. M. Bonar, F. Cristiano, P. Ashburn, S. Hall
and P. L. F. Hemment
SummaryPlus | Article | Journal Format-PDF (459 K)

[14] : An investigation of the mechanical behavior of conductive elastomer
interconnects, Pages 281-286
Jingsong Xie, Michael Pecht, David DeDonato and Ali Hassanzadeh
SummaryPlus | Article | Journal Format-PDF (396 K)

[15] : Study of micro-BGA solder joint reliability, Pages 287-293
P. L. Tu, Y. C. Chan, K. C. Hung and J. K. L. Lai
SummaryPlus | Article | Journal Format-PDF (296 K)

[16] : Design issues of a three-dimensional packaging scheme for power modules,
Pages : 295-305
Shatil Haque, Kalyan Siddabattula, Mike Craven, Sihua Wen, Xingsheng Liu,
Dusan Boroyevich and Guo-Quan Lu
SummaryPlus | Article | Journal Format-PDF (640 K)

[17] : Reliability aspects of thermal micro-structures implemented on industrial
0.8 m CMOS chips, Pages 307-315
L. Y. Sheng, C. De Tandt, W. Ranson and R. Vounckx
SummaryPlus | Article | Journal Format-PDF (783 K)

[18] : A generalized model for the lifetime of microelectronic components,
applied to storage conditions, Pages 317-322
Loren J. Wise, Ronald D. Schrimpf, Harold G. Parks and Kenneth F. Galloway
SummaryPlus | Article | Journal Format-PDF (227 K)

[19] : Module allocation with idle-time utilization for on-line testability,
Pages : 323-332
A. A. Ismaeel, R. Mathew and R. Bhatnagar
Lien : vide.pdf - | Journal Format-PDF (216 K)
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