Revue : [REVUE193]

Titre : Elsevier Science, Microelectronics Reliability, Volume 41, Issue 1, Pages 1-143, January 2001.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.

Volume : 41
Issue : 1
Pages : 1-143
Date : January 2001
Stockage : Thierry LEQUEU - LMP.

[1] : Editorial, Page 1
Ninoslav Stojadinovic and Michael Pecht
Lien : vide.pdf - | Article | Journal Format-PDF (26 K)

[2] : Alternative CMOS or alternative to CMOS?, Pages 3-12
S. Deleonibus
Lien : vide.pdf - | Article | Journal Format-PDF (762 K)

[3] : Status and trends of silicon RF technology, Pages 13-19
Joachim N. Burghartz
Lien : vide.pdf - | Article | Journal Format-PDF (383 K)

[4] : Reliability physics of compound semiconductor transistors for microwave applications, Pages 21-30
M. Borgarino, R. Menozzi, D. Dieci, L. Cattani and F. Fantini
Lien : private/BORGARINO.pdf - | Article | Journal Format-PDF (208 K)

[5] : On the calculation of gate tunneling currents in ultra-thin metal¯insulator¯semiconductor capacitors, Pages 31-35
W. Magnus and W. Schoenmaker
Lien : vide.pdf - | Article | Journal Format-PDF (149 K)

[6] : A study of the effects of tunneling currents and reliability of sub-2 nm gate oxides on scaled n-MOSFETs, Pages 37-46
Nian Yang and Jimmie J. Wortman
Lien : vide.pdf - | Article | Journal Format-PDF (679 K)

[7] : Time-dependent dielectric breakdown of SiO2 films in a wide electric field range, Pages 47-52
A. Teramoto, H. Umeda, K. Azamawari, K. Kobayashi, K. Shiga, J. Komori, Y. Ohno and A. Shigetomi
Lien : vide.pdf - | Article | Journal Format-PDF (332 K)

[8] : Correlation between predicted cause of SRAM failures and in-line defect data, Pages 53-57
Peter Coppens, Guido Vanhorebeek and Eddy De Backer
Lien : vide.pdf - | Article | Journal Format-PDF (263 K)

[9] : Evaluation of thick-film resistor structural parameters based on noise index measurements, Pages 59-66
M. M. Jevti, Z. Stanimirovi and I. Stanimirovi
Lien : vide.pdf - | Article | Journal Format-PDF (306 K)

[10] : Inversion phenomenon as a result of junction damages in neutron irradiated silicon detectors, Pages 67-72
G. Golan, E. Rabinovich, A. Inberg, A. Axelevitch, G. Lubarsky, P. G. Rancoita, M. Demarchi, A. Seidman and N. Croitoru
Lien : vide.pdf - | Article | Journal Format-PDF (318 K)

[11] : Monte Carlo simulation of electronic characteristics in short channel-doped AlInAs/GaInAs HEMTs, Pages 73-77
Javier Mateos, Tomás González, Daniel Pardo, Virginie Hoel and Alain Cappy
Lien : vide.pdf - | Article | Journal Format-PDF (325 K)

[12] : Degradation and recovery of AlGaAs/GaAs p-HEMT irradiated by high-energy particle, Pages 79-85
H. Ohyama, E. Simoen, S. Kuroda, C. Claeys, Y. Takami, T. Hakata, K.
Kobayashi, M. Nakabayashi and H. Sunaga
Lien : vide.pdf - | Article | Journal Format-PDF (409 K)

[13] : The coherence of the gate and drain noise in stressed AlGaAs¯InAlGaAs PHEMTs, Pages 87-97
B. K. Jones, C. N. Graham, A. Konczakowska and L. Hasse
Lien : vide.pdf - | Article | Journal Format-PDF (504 K)

[14] : A wavelet analysis of 1/f and white noise in microwave transistors, Pages 99-104
Gaetano Ferrante and Dominique Persano Adorno
Lien : vide.pdf - | Article | Journal Format-PDF (191 K)

[15] : Effect of electrical and thermal stress on low-frequency noise characteristics of laser diodes, Pages 105-110
X. Y. Chen, A. Pedersen and A. D. van Rheenen
Lien : vide.pdf - | Article | Journal Format-PDF (204 K)

[16] : Highly reliable spot-size converter integrated laser diodes over a wide temperature range for access network systems, Pages 111-118
H. Oohashi, M. Fukuda, Y. Kondo, M. Yamamoto, Y. Kadota, Y. Kawaguchi, K. Kishi, Y. Tohmori, K. Yokoyama and Y. Itaya
Lien : vide.pdf - | Article | Journal Format-PDF (726 K)

[17] : An image system for fast positioning and accuracy inspection of ball grid array boards, Pages 119-128
Chern-Sheng Lin and Li Wen Lue
Lien : vide.pdf - | Article | Journal Format-PDF (552 K)

[18] : Proportional difference estimate method of determining characteristic parameters of normal and log¯normal distributions, Pages 129-131
Fuchen Mu, Changhua Tan and Mingzhen Xu
Lien : private/FUCHEN.pdf - | Article | Journal Format-PDF (78 K)

[19] : Direct temperature measurement of integrated microelectronic devices by thermally induced leakage currents, Pages 133-136
Klaus-Willi Pieper and Martin Sauter
Lien : private/Pieper.pdf - | Article | Journal Format-PDF (332 K)

[20] : New expression for base transit time in a bipolar transistor for all levels of injection, Pages 137-140
M. M. Shahidul Hassan and A. H. Khandoker
Lien : vide.pdf - | Article | Journal Format-PDF (224 K)

[21] : Guidebook for Managing Silicon Chip Reliability; Michael G. Pecht, Riko Radojcic, Gopal Rao. CRC Press LLC, Boca Raton, 1999, 224 pp. ISBN: 0-8493-9624-7, Pages 141-142
M. Jevtic
Lien : private/Revue193.pdf - | Article | Journal Format-PDF (56 K)

[22] : Understanding Semiconductor Devices; Sima Dimitrijev. Oxford University Press, New York. 2000. ISBN: 0-19-513186-X, Pages 142-143
Ninoslav Stojadinovic
Lien : private/Revue193.pdf - | Article | Journal Format-PDF (45 K)

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