DATA : [REVUE167]

Titre : Elsevier Science, Microelectronics Reliability, Vol. 40, Issue 2, pp. 191-364, 28 February 2000.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.

Volume : 40, Issue 2,
Pages : 191 - 364
Date : 28 February 2000

[1] : Perspectives on giga-bit scaled DRAM technology generation, Pages 191-206
Kinam Kim
SummaryPlus | Article | Journal Format-PDF (1528 K)

[2] : Degradation mechanisms in polysilicon emitter bipolar junction transistors for digital applications, Pages 207-230
Loris Vendrame, Paolo Pavan, Giulio Corva , Alessandra Nardi, Andrea Neviani and Enrico Zanoni
SummaryPlus | Article | Journal Format-PDF (780 K)

[3] : Solder joint fatigue models: review and applicability to chip scale packages, Pages 231-244
W. W. Lee, L. T. Nguyen and G. S. Selvaduray
SummaryPlus | Article | Journal Format-PDF (244 K)

  [1] :  [PAP256]  W.W. LEE, L.T. NGUYEN, G.S. SELVADURAY, Solder joint fatigue models: review and applicability to chip scale packages, Microelectronics Reliability, Vol. 40, No. 2, 2000, pp. 231-244.

[4] : A simple VLSI spherical particle-induced fault simulator: application to DRAM production process, Pages 245-253
Koji Nakamae, Hisanaga Ohmori and Hiromu Fujioka
SummaryPlus | Article | Journal Format-PDF (2486 K)

[5] : Fault model for sub-micron CMOS ULSI circuits reliability assessment, Pages 255-265
B. Lisenker and Y. Mitnick
SummaryPlus | Article | Journal Format-PDF (459 K)

[6] : The influence of stud bumping stress on device degradation in scaled
MOSFETs, Pages 267-275
Nobuhiro Shimoyama, Katsuyuki Machida, Masakazu Shimaya, Hiroshi Koizumi
and Hakaru Kyuragi
SummaryPlus | Article | Journal Format-PDF (1346 K)

[7] : Electrical characterization of ultra-shallow n+p junctions formed by AsH3
plasma immersion implantation, Pages 277-281
B. L. Yang, H. Wong, P. G. Han and M. C. Poon
SummaryPlus | Article | Journal Format-PDF (173 K)

[8] : Analysis of Fowler¯Nordheim injection in NO nitrided gate oxide grown on
n-type 4H¯SiC, Pages 283-286
Hui-Feng Li, Sima Dimitrijev, Denis Sweatman and H. Barry Harrison
SummaryPlus | Article | Journal Format-PDF (147 K)

[9] : Effect of drain voltage on channel temperature and reliability of
pseudomorphic InP-based HEMTs, Pages 287-291
M. Dammann, M. Chertouk, W. Jantz, K. Köhler, W. Marsetz, K. H. Schmidt
and G. Weimann
SummaryPlus | Article | Journal Format-PDF (208 K)

[10] : Method for assessing remaining life in electronic assemblies, Pages
293-306
F. P. McCluskey, Y. D. Kweon, H. J. Lee, J. W. Kim and H. S. Jeon
SummaryPlus | Article | Journal Format-PDF (1872 K)

[11] : Design error diagnosis in digital circuits with stuck-at fault model,
Pages : 307-320
A. Jutman and R. Ubar
SummaryPlus | Article | Journal Format-PDF (361 K)

[12] : Analysis of the noise characteristics of current-feedback operational
amplifier, Pages 321-327
Gaetano Palumbo and Salvatore Pennisi
SummaryPlus | Article | Journal Format-PDF (199 K)

[13] : A characteristic analysis of high-speed integrated circuit chip based on
laser probe, Pages 329-332
Tian Xiaojian, Yi Maobin and Sun Wei
SummaryPlus | Article | Journal Format-PDF (153 K)

[14] : Effective method for evaluation of semiconductor laser quality, Pages
333-337
Hongyan Li, Liyun Qi, Jiawei Shi, Enshun Jin, Zhengting Li, Dingsan Gao,
Jinzhong Yu and Liang Guo
SummaryPlus | Article | Journal Format-PDF (211 K)

[15] : Processing induced material interactions determining the reliability of
LTCC multichip modules, Pages 339-345
Gábor Harsányi
SummaryPlus | Article | Journal Format-PDF (232 K)

[16] : Analysis of colorimetric system under foggy, thermal and electrical
conditions with /, Pages 347-353
J. -J. Charlot, J. -K. Seon and J. -F. Charlot
SummaryPlus | Article | Journal Format-PDF (784 K)

[17] : A new method to extract diode parameters under the presence of parasitic
series and shunt resistance, Pages 355-358
J. C. Ranuárez, A. Ortiz-Conde and F. J. García Sánchez
SummaryPlus | Article | Journal Format-PDF (147 K)

[18] : SiGe, GaAs, and InP Heterojunction Bipolar Transistors; Jiann S. Yuan,
John Wiley & Sons, Inc., 605 Third Avenue, New York, NY 10158-0012, USA,
1999, 463 pp. ISBN: 0-471-19746-7, GBP 64.50, Page 359
J. Karamarkovi
SummaryPlus | Article | Journal Format-PDF (68 K)

[19] : Fundamentals of III¯V Devices HBTs, MESFETs, and HFETs/HEMTs; William Liu,
John Wiley & Sons, Inc., 605 Third Avenue, New York, NY 10158-0012, USA,
1999, 505 pp. ISBN: 0-471-29700-3, GBP 61.50, Page 361
J. Karamarkovi
SummaryPlus | Article | Journal Format-PDF (71 K)

[20] : InP-Based Materials and Devices: Physics and Technology; O. Wada, H.
Hasegawa, John Wiley & Sons, Inc., New York. ISBN 0-471-18191-9, £80.95,
Pages : 363-364
Milan M. Jevti
SummaryPlus | Article | Journal Format-PDF (71 K)
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