Article : [PAP477]
Info : REPONSE 3, le 08/12/2001.
Titre : J.-M. THEBAUD, E. WOIRGARD, C. ZARDINI, K.-H. SOMMER, Extensive Fatigue Investigation of Solder Joints in IGBT High Power Module, ECTC'2000.
Cité dans : [CONF038] ECTC, Electronic Components and Technology Conference et IEEE Electronic Components and Technology, mars 2004. Cité dans : [DIV289] Recherche sur l'auteur Christian ZARDINI, juillet 2004. Cité dans : [DIV441] Recherche sur l'auteur Eric WOIRGARD, juillet 2004.Auteur : J.-M. Thebaud
Source : ECTC'2000 - 50th Electronic Components & Technology Conference
Lieu : Caesars Palace, Las Vegas, Nevada
Date : May 21 - 24, 2000
Lien : ECTC/ECTC2000/ECTC2000.pdf
Source : Proceedings - Electronic Components and Technology Conference 2000.
Pages : 1436 - 1442
Info : IEEE, Piscataway, NJ, USA, 00CB37070
CODEN : PECCA7
ISSN : 0569-5503
Année : 2000
Document_Type : Conference Article
Treatment_Code : Theoretical; Experimental
Language : English
Stockage :
Abstract :
IGBT (Insulated Gate Bipolar Transistor) power modules are more and more used in traction applications, where they replace thyristors and GTO (Gate Turn Off thyristors).
Unlike the press-pack packaging of the latter, these modules contain numerous IGBT chips in parallel, and thus numerous solder joints which play a key role in the reliability of this stack packaging.
Accelerated aging tests have been carried out with more than one hundred representative samples divided in seven batches. They differed in the type of solder (two compositions including a lead-free one), cooling rate after the reflow, and metallization of the ceramic substrate.
Most cycled samples have been extensively analyzed to make a ranking of the different technological choices. Moreover, the influence of the main technological and manufacturing process parameters has been evaluated.
Results have shown that the solder composition and the cooling rate after the reflow have a strong influence on the thermal fatigue resistance of the tests specimens.(Author abstract)
Références : 11 Refs.
Accession_Number : 2001(12):817 COMPENDEX
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