J. B. Nysaether, A. Larsenb, B. Liverodb, P. Ohlckersa, "Structures for piezoresistive measurement of package induced stress in transfer molded silicon pressure sensors", Microelectronics and Reliability, Volume 38, Issues 6-8, 8 June 1998, pp. 1271-1276.

J. B. Nysaether, A. Larsenb, B. Liverodb, P. Ohlckersa, "Structures for piezoresistive measurement of package induced stress in transfer molded silicon pressure sensors", Microelectronics and Reliability, Volume 38, Issues 6-8, 8 June 1998, pp. 1271-1276. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [PAP463]

Titre : J. B. Nysaether, A. Larsenb, B. Liverodb, P. Ohlckersa, Structures for piezoresistive measurement of package induced stress in transfer molded silicon pressure sensors, Microelectronics and Reliability, Volume 38, Issues 6-8, 8 June 1998, pp. 1271-1276.

Cité dans :[REVUE253] Elsevier Science, Microelectronics Reliability, Volume 38, Issues 6-8, Pages 851-1366, 8 June 1998.
Cité dans : [DATA233] ESREF'98, Proceedings of the 9th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, 5-9 October 1998.
Cité dans :[PAP360]

Auteur : J. B. Nysaether - (a)(c)
Auteur : A. Larsen - (b)
Auteur : B. Liverod - (b)
Auteur : P. Ohlckers - (a)(b )

Adresse :
(a) : Institute of Physics, University of Oslo 0316 Oslo Norway
(b) : SensoNor, P.O. Box 196 3192 Horten Norway
(c) : SINTEF Electronics and Cybernetics, Postboks 124 Blindern 0314 Oslo Norway

Source : Microelectronics and Reliability
Volume : 38
Issues : 6-8
Date : 8 June 1998
Pages : pp. 1271-1276.
Info : Available online 4 December 1998.
Lien : private/Nysaether.pdf - 411 Ko, 6 pages.

Abstract :
The package induced stress in a transfer molded micromechanical pressure sensor
has been measured by use of silicon piezoresistors. Measurements have been
carried out by monitoring the individual piezoresistors in the measuring bridge
of an existing sensor, and by measurements on a modified sensor structure with
specially designed stress sensing structures. The induced difference (x - y)
between x- and y- normal stress in the sensor diaphragm has been measured to 50
± 10 MPa at 25°C. The induced stress creates a thermal zero shift of the sensor
signal. By covering the sensor chip with a soft glob top before molding, the
stress may be considerably reduced. For glob-topped samples the measured value
of (x - y) at 25°C is 20 ± 20 MPa.

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