M. Litzenberger, R. Pichler, S. Bychikhin, D. Pogany, K. Esmak, H. Gossner, E. Gornik, "Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection devices", ESREF'2001, pp. 1385-1390
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Article : [PAP365]
Titre : M. Litzenberger, R. Pichler, S. Bychikhin, D. Pogany, K. Esmak, H. Gossner, E. Gornik, Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection devices, ESREF'2001, pp. 1385-1390
Cité dans : [DATA227] ESREF'2001, 12th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Arcachon, France , 1-5 octobre 2001.
Auteur : M. Litzenberger (1)
Auteur : R. Pichler (1)
Auteur : S. Bychikhin (1)
Auteur : D. Pogany (1)
Auteur : K. Esmak (2)
Auteur : H. Gossner (2)
Auteur : E. Gornik (1)
Adresse : (1) TU Vienna - Austria, (2) Infineon Technologies - Germany
Source : ESREF'2001 - 12th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - Arcachon - France.
Date : 1-5 octobre 2001
Site : http://www.elsevier.com/locate/microrel
Page : 1385 - 1390
Lien : private/LITZENBERGER.pdf - 6 pages, 133 Ko.
Abstract :
Triggering homogeneity of 0.35µm and 0.18µm technology grounded-gate nMOSFET electrostatic discharge
(ESD) protection devices is investigated as a function of pulse risetime and current stress level. The current distribution
along the device width is analysed using a backside interferometric thermal mapping technique. Differences in the
triggering behaviour for different pulse risetimes have been found and have been attributed to a dU/dt triggering effect.
Pulse-to-pulse instabilities in the triggering place have also been revealed at low stress currents using single shot
measurements.
Références : 12
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