H. Toutah, J.F. Llibre, B. Tata-Ighil, T. Mohammed-Brahim, Y. Helen, G. Gautier, O. Bonnaud, "Improved stability of large area excimer laser crystallised polysilicon thin film transistors under DC and AC operating", ESREF'2001, pp. 1325-1329

H. Toutah, J.F. Llibre, B. Tata-Ighil, T. Mohammed-Brahim, Y. Helen, G. Gautier, O. Bonnaud, "Improved stability of large area excimer laser crystallised polysilicon thin film transistors under DC and AC operating", ESREF'2001, pp. 1325-1329 Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [PAP364]

Titre : H. Toutah, J.F. Llibre, B. Tata-Ighil, T. Mohammed-Brahim, Y. Helen, G. Gautier, O. Bonnaud, Improved stability of large area excimer laser crystallised polysilicon thin film transistors under DC and AC operating, ESREF'2001, pp. 1325-1329

Cité dans : [DATA227] ESREF'2001, 12th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Arcachon, France , 1-5 octobre 2001.

Auteur : H. Toutah (1)
Auteur : J.F. Llibre (1)
Auteur : B. Tata-Ighil (1)
Auteur : T. Mohammed-Brahim (2)
Auteur : Y. Helen (2)
Auteur : G. Gautier (2)
Auteur : O. Bonnaud (2)

Adresse : (1) LUSAC, (2) University of Rennes 1 - France
Source : ESREF'2001 - 12th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - Arcachon - France.
Date : 1-5 octobre 2001
Site : http://www.elsevier.com/locate/microrel
Pages : 1325 - 1329
Lien : private/Toutah.pdf - 5 pages, 33 Ko.

Abstract :
High improvement of the polysilicon Thin Film Transistors made from large area excimer laser
crystallised films is reported. Due to this weak reliability, the use of these TFTs in practical applications was,
until now, subject to caution even their field effect mobility is greater than that of solid phase crystallised TFTs.
Assuming that the weak reliability may occur from the behaviour of ambient impurities as oxygen, nitrogen
that can be introduced in the silicon film during the air performed laser crystallisation, crystallisation is made in
neutral ambience in this work. Very weak variation of the subthreshold slope S is obtained (DS = 0.02, more than
10 times weaker than in the air crystallisation case!) under gate bias stress. Physical explanation of this better
stability deals with the relation between the importance of the disordered regions and the move of impurities
during the stress that leads to low stability. Larger grains in the polycristalline structure induce higher stability.
Moreover, as these TFTs are commonly used as switching devices in the most of applications in large area
electronics field, the present work shows that the effect of DC gate bias stress is higher than that of the AC stress.

Bibliographie

Références : 5
[1] : Boyce J.B., Anderson G.B., Fork D.K., Johnson R.I., Mei P. and Ready S.E., Materials Research Society Symp. Proc. 327 (1994) 671
[2] : Helen Y., Mourgues K., Raoult F., Bonnaud O., Mohammed-Brahim T., C. Prat, Euro-Display’99, Berlin September 1999.
[3] : Mourgues K., Raoult F., Pichon L., Mohammed-Brahim T., Briand D. and Bonnaud O., Materials Research Society Symp. Proc. 471 (1997) 155
[4] : Rahal A., Mohammed-Brahim T., Toutah H., Tala-Ighil B., Helen Y., Raoult F., Bonnaud O., Prat C., ESREF’99 in Microlectronics Reliability 39, 851 (1999)
[5] : Toutah H., Tala-Ighil B., Llibre J.F., Mohammed-Brahim T., Mourgues K., Helen Y., Raoult F., Bonnaud O., ESREF’00 in Microlectronics Reliability 40, 1573 (2000)

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