V. JOHN, B.-S. SUH, T.A. LIPO, "High-performance active gate drive for high-power IGBT's", IEEE Transactions on Industry Applications, 1999.

V. JOHN, B.-S. SUH, T.A. LIPO, "High-performance active gate drive for high-power IGBT's", IEEE Transactions on Industry Applications, 1999. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [PAP263]

Titre : V. JOHN, B.-S. SUH, T.A. LIPO, High-performance active gate drive for high-power IGBT's, IEEE Transactions on Industry Applications, 1999.

Cité dans : [DIV398]  Les revues IEEE Transactions on Industry Applications et IEEE Industry Applications Society - IAS, novembre 2005.
Cité dans :[PAP260]

Auteur : John, V.
Auteur : Bum-Seok Suh
Auteur : Lipo, T.A - Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA

Stockage : Thierry LEQUEU
Lien : private/JOHN-SUH.pdf - 361 Ko, 10 pages.
Source : IEEE Transactions on Industry Applications
Pages : 1108 - 1117
Date : Sept.-Oct. 1999
Volume : 35
Issue : 5
ISSN : 0093-9994
References : 13
CODEN : ITIACR
Accession_Number : 6379166

Abstract :
This paper deals with an active gate drive (AGD) technology for
high-power insulated gate bipolar transistors (IGBTs). It is
based on an optimal combination of several requirements necessary
for good switching performance under hard-switching conditions.
The scheme specifically combines together the slow drive
requirements for low noise and switching stress and the fast
drive requirements for high-speed switching and low switching
energy loss. The gate drive can also effectively dampen
oscillations during low-current turn-on transient in the IGBT.
This paper looks at the conflicting requirements of the
conventional gate drive circuit design and demonstrates using
experimental results that the proposed three-stage AGD technique
can be an effective solution.

Subject_terms :
power bipolar transistors; high-power IGBTs; high-performance
active gate drive; insulated gate bipolar transistors; switching
performance; hard-switching conditions; noise; switching stress;
switching energy loss; oscillations damping; low-current turn-on
transient

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