N. IDIR, R. BAUSIERE, "Circuit oriented simulation of GTO thyristors using bond-graphs
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Article : [PAP264]

Titre : N. IDIR, R. BAUSIERE, Circuit oriented simulation of GTO thyristors using bond-graphs

Cité dans : [DIV218]  Recherche sur l'auteur Nadir IDIR, le 11 mai 2001.
Auteur : Idir, N.
Auteur : Bausiere, R - LEEP, Lille I Univ., Villeneuve d'Ascq, France

Stockage : Thierry LEQUEU
Lien : private/IDIR2.pdf - 244 Ko, 4 pages.
Source : Systems, Man and Cybernetics, 1993. 'Systems Engineering in the Service of Humans', Conference Proceedings., International Conference on
Pages : 579 - 582
Volume : 1
Date : 17-20 Oct. 1993
ISBN : 0-7803-0911-1
Info : IEEE Catalog Number: 93CH3242-5

Info : Total Pages : 5 vol. (754+759+769+755+429)
References : 4
Accession_Number : 4890586

Abstract :
This paper reports on a new numerical model of GTO thyristor
embedded in a buck converter configuration. The GTO thyristor and
the free-wheeling diode undergo and/or generate various types of
stresses which cannot appear if the switches are modelled as
two-state resistors (R/sub ON/ and R/sub OFF/), as is the case
with many power circuit simulation softwares. Much more precise
models have been developed from semiconductor physics, but they
hardly apply to power circuit simulation because of the
associated large number of equations. The purpose of this paper
is to present a simple model of GTO thyristor derived from the
device physics and allowing it to represent the device
imperfections, in particular the behaviour at turn off. This has
been achieved with the use of bond-graph technique.

Subject_terms :
digital simulation; semiconductor device models; thyristors; bond
graphs; power convertors; power semiconductor switches; circuit
oriented simulation; GTO thyristors; bond-graphs; numerical
model; buck converter configuration; free-wheeling diode;
two-state resistors; power circuit simulation; device physics;
device imperfections; turn off


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