"A new simplified charge pumping current model and its model parameter extraction [MOSFET]", 1996

"A new simplified charge pumping current model and its model parameter extraction [MOSFET]", 1996 Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [PAP249]

Titre : A new simplified charge pumping current model and its model parameter extraction [MOSFET], 1996

Auteur : Hsin-Hsien Li
Auteur : Yu-Lin Chu
Auteur : Ching-Yuan W - Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Stockage : Thierry LEQUEU
Lien : private/HSIN-HSIEN.pdf - 7 pages, ko.
Source : Electron Devices, IEEE Transactions on
Pages : 1857 - 1863
Date : Nov. 1996
Volume : 43
Issue : 11
ISSN : 0018-9383
References : 12
CODEN : IETDAI
Accession_Number : 5433419

Abstract :
Using the Shockley-Read-Hall (SRH) theory, a simple analytic
charge pumping current model has been developed and its accuracy
verified by exact numerical analysis. It is shown that the
derived analytic charge pumping current model with constant
capture cross sections for electrons and holes does not correctly
simulate the rising (falling) edges of the experimental charge
pumping current. According to the slopes of the logarithmic
charge pumping current, effective capture-cross-section models
for elections and holes are proposed and are incorporated into
the developed analytic charge pumping current model. It is shown
that the experimental charge pumping current can be simulated
very well by using the modified analytic model.

Subject_terms :
MOSFET; semiconductor device models; electron traps; hole traps;
interface states; electron-hole recombination; charge pumping
current model; model parameter extraction; Shockley-Read-Hall
theory; numerical analysis; constant capture cross sections;
electron capture cross section; hole capture cross section;
logarithmic charge pumping current; MOSFET; interface trap
states; trapping kinetics

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