"Analysis on accuracy of charge-pumping measurement with gate sawtooth pulses [MOSFETs]", 1998.

"Analysis on accuracy of charge-pumping measurement with gate sawtooth pulses [MOSFETs]", 1998. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [PAP250]

Titre : Analysis on accuracy of charge-pumping measurement with gate sawtooth pulses [MOSFETs], 1998.

Auteur : Lai, P.T.
Auteur : Xu, J.P.
Auteur : Poek, C.K.
Auteur : Cheng, Y.C - Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong

Stockage : Thierry LEQUEU
Lien : private/LAI1.pdf - 6 pages, ko.
Source : Electron Devices, IEEE Transactions on
Pages : 947 - 952
Date : April 1998
Volume : 45
Issue : 4
ISSN : 0018-9383
References : 9
CODEN : IETDAI
Accession_Number : 5886122

Abstract :
Charge-pumping (CP) measurement is performed on MOSFETs with
their gates tied to sawtooth pulses. Influence of both rise time
(t/sub r/) and fall time (t/sub f/) on the CP current of the
devices with different channel lengths is investigated at
different pulse frequencies. Results show that the dominant
mechanism affecting the measurement accuracy is the energy range
of interface-trap distribution D/sub it/(E) swept by the gate
signal for frequencies below 500 kHz and carrier emission for
frequencies above 500 kHz. For frequencies higher than 600 kHz,
incomplete recombination could be an additional mechanism when
t/sub f/ is too short. Hence, it is suggested that low frequency
is more favorable than high frequency, especially for sawtooth
pulses with long t/sub r/ and short t/sub f/, due to little
carrier emission and negligible geometric effects even for
devices as long as 50 /spl mu/m. However, if high frequency (e.g.
1 MHz) is required to obtain a sufficiently large S/N ratio in
the CP current, sawtooth pulses with equal t/sub r/ and t/sub f/
should be chosen for the least carrier emission effect and thus
more reliable results on interface-state density, Moreover, for
both sawtooth and trapezoidal pulses with a typical amplitude of
5 V, a lower limit of 200 ns for t/sub r/ and t/sub f/ is
necessary to suppress all the undesirable effects in devices
shorter than at least 20 /spl mu/m.

Subject_terms :
MOSFET; charge-pumping measurement; gate sawtooth pulses;
MOSFETs; rise time; fall time; interface-trap distribution;
carrier emission effect; interface-state density

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