J. LIN-KWANG, S. RAMEY, J.M. REYNES, R.J. HILLARD, T. THIEME, "The role of spreading resistance profiling in manufacturing control and technology development", ESREF'2000.
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Titre : J. LIN-KWANG, S. RAMEY, J.M. REYNES, R.J. HILLARD, T. THIEME, The role of spreading resistance profiling in manufacturing control and technology development, ESREF'2000.
Cité dans : [DATA126] ESREF'2000, 11th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Dresden, Germany, 2-6 octobre 2000.
Cité dans :[CONF058]
Auteur : J. Lin-Kwang - (a)
Auteur : S. Ramey - (b)
Auteur : J. M. Reynes - (a)
Auteur : R.J. Hillard - (b)
Auteur : T. Thieme - (c)
(a) : Motorola Semiconductor Products Sector, 134 Av. Général Eisenhower, Le Mirail-B.P.1029, F-31023 Toulouse Cedex - France
(b) : Solid State Measurement Inc, 110 Technology Dr., Pittsburgh, PA, 15275 USA
(c) : Solid State Measurements GmbH, Manfred-von-Ardenne-Ring 20 Haus F, D-01099 Dresden, Germany
Stockage : Thierry LEQUEU
Lien : private/KWANG.pdf - 377 Ko, 6 pages.
Abstract :
Spreading resistance profiling (SRP) has the unique ability to measure doping profiles through multiple
junctions, to essentially unlimited depths and over a range of densities from 10 10 to 10 21 /cm 3 . This range and
flexibility makes the technique ideally suited to find various device failure mechanisms that can arise during
dopant processing, as well as aid New Technology Development (NTD).
We show through case studies how SRP can reveal various failure mechanisms and illustrate its use in the
development of new MOS technologies.
References : 12
[1] : R. G. Mazur and D. H. Dickey, "A Spreading Resistance Technique for Resistivity Measurements on Silicon, "J. Electrochem. Soc., Vol. 113, p. 255. 1966.
[2] : Mazur R. G. and G. A. Gruber, "Spreading Resistance Profiling," Section 3.1. in Materials and Process Characterization of Ion Implantation, edited by M. I. Current and C. B. Yarling. Ion Beam Press, 1997.
[3] : ASTM F-723-88. "Standard Practice for Conversion Between Resistivity and Dopant Density for Boron-Doped and Phosphorus-Doped Silicon." American Society for Testing and Materials, 1997.
[4] : Hartford E. J., Ramey S. M., Ye C. W., and Hartford C. L., "Comparison of contact radius models for ultrashallow spreading resistance profiles," J. Vac. Sci. Technol. B, vol. 18, no. 1, Jan/Feb 2000. pp. 401-404.
[5] : Karpov I., Hartford C., Moran G., Krishnakumar S., Choma R., and Linn J., "Investigation of the Dopant Distribution in Thin Epitaxial Silicon Layers by Means of Spreading Resistance Probe and Secondary Ion Mass Spectrometry," Mat. Res. Soc. Symp. Proc. Vol.500, 1998. pp. 75-80.
[6] : Clapper R. A., Schimmel D. G., J. Tsai C. C., Jabara F. S., Stevie R. A., and Kahora P. M., "Comparison of Boron Profiles by the Spreading Resistance Profile and the Secondary Ion Mass Spectrometry Techniques," J. Electrochem. Soc. Vol. 137, No. 6, June 1990. pp. 1877-1883.
[7] : SSM 2000 Operators Manual.
[8] : Evans M. K., "Secondary Ion Mass Spectroscopy, SIMS," in "Failure Analysis of Integrated Circuit -Tools and Techniques" Chapter 14 (pages 229-240), Edited by Lawrence C. Wagner, Kluwer Academic Publishers, 1999.
[9] : 1999 International Technology Roadmap for Semiconductors. Semiconductor Industry Association, p.124.
[10] : For example, Solid State Measurement’s Electrically-active Dopant Profiler package.
[11] : Mazur R.G., "Poisson-based analysis of spreading resistance profiles" J. Vac. Sci. Tech. B 10, No. 1, pp. 397-407, Jan/Feb 1992.
[12] : Pawlik M., "Profiling of Ultra-Shallow Layers Using Spreading Resistance," 4 th International Workshop on the Measurement, Characterization, and Modelling of Ultra-Shallow Doping Profiles, Research Triangle Park, North Carolina, April 1997.
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