Article : [PAP208]

Titre : High turn-off current capability of parallel-connected 4.5 kV trench-IEGTs, ISPSD'98.

Cité dans : [CONF007] ISPSD, Internationnal Symposium on Power Semiconductor Devices & Integrated Circuits

Stockage : Thierry LEQUEU
Lien : private/MATSUDA2.pdf - 332 Ko.
Source : Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Pages : 47 - 50
Date : 3-6 June 1998
ISBN : 0-7803-4752-8
Info :IEEE Catalog Number: 98CH36212
Info : Total Pages : xxiii+513
References : 10
Accession_Number : 6083010

Abstract :
The turn-off characteristics of parallel-connected 4.5 kV trench
injection enhanced gate transistors (IEGTs) are discussed. The
influence of the gate circuit parameters on turn-off current
balance was examined in order to realize high turn-off current
capability. It is concluded that the reduction of the gate
parasitic inductance is important for uniform turn-off operation.
At the optimum gate circuit condition, it is shown that the
maximum turn-off current increases in proportion to the number of
IEGT chips. As a result, a 1300 A turn-off current capability at
T/sub j/=100/spl deg/C is realized using nine parallel-connected
IEGT chips in an inductive load circuit and without a snubber
circuit.

Subject_terms :
power bipolar transistors; turn-off current capability;
parallel-connected trench-IEGTs; turn-off characteristics; trench
IEGTs; gate circuit parameters; trench injection enhanced gate
transistors; turn-off current balance; gate parasitic inductance;
uniform turn-off operation; optimum gate circuit condition;
maximum turn-off current; IEGT chips; parallel-connected IEGT
chips; inductive load circuit; snubber circuit; 1300 A; 100 C;
4.5 kV

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