Article : [PAP209]
Titre : Internal characterization of IGBTs using the backside laser probing technique-interpretation of measurement by numerical simulation, ISPSD'98.
Cité dans : [CONF007] ISPSD, Internationnal Symposium on Power Semiconductor Devices & Integrated Circuits Cité dans : [DATA204] fke, Institut für Festkörperelektronik (E362), 2000.Auteur : Thalhammer, R.
Stockage : Thierry LEQUEU
Lien : private/FURBOCK3.pdf - 248 Ko
Source : Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Pages : 199 - 202
Date : 3-6 June 1998
ISBN : 0-7803-4752-8
Info : IEEE Catalog Number: 98CH36212
Info : Total Pages : xxiii+513
References : 6
Accession_Number : 6083043
Abstract :
Recently, it has been demonstrated that internal carrier
concentration and temperature profiles in semiconductor devices
are accessible to accurate measurement by various infrared laser
probing techniques (Deboy et al., Microelectronic Eng. vol 31, p.
299, 1996, and Seliger et al., ibid., vol. 31, p. 87, 1996). This
work presents an additional technique, namely the time-resolved
characterization of IGBTs by backside laser probing. Calibrated
numerical device simulation is employed for investigation of the
relevance of effects introduced by the sample preparation on the
interpretation of the measurement results.
Subject_terms :
insulated gate bipolar transistors; IGBT internal
characterization; IGBTs; backside laser probing technique;
numerical simulation; measurement interpretation; internal
carrier concentration; internal temperature profiles;
semiconductor devices; infrared laser probing techniques;
backside laser probing; time-resolved characterization;
calibrated numerical device simulation; sample preparation
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