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The Technical Symposium focusses on the following areas:
Advanced Failure Analysis Techniques
Physical, chemical and electrical analysis techniques for fault isolation and failure identification, Novel techniques including optical beam, electron beam, ion beam and scanning probe techniques
Dielectrics and Hot-Carrier Reliability
Time dependent dielectric breakdown, Oxide degradation mechanisms and modelling, Plasma induced damages - characterisation techniques, mechanisms and modelling, Tunnel oxides in non-volatile memories, Hot-carrier effects - measurement techniques and modelling
Practical Issues in Built-in Reliability
Reliability engineering emphasizing design and process aspects, Process control in wafer processing and reliability, Assembly related issues in device reliability
Packaging and Metallization Related Failure Mechanisms
Electromigration studies and modelling, Contact degradation and related issues, MCM, BGA, CSP, Flip-chip and other advanced packaging related failure mechanisms, Package stress modelling and characterisation, Fine pitch wire bonding and solder joint reliability, Copper interconnects
EOS/ESD and CMOS Latch-up
Effect of ESD on specific devices and new protection structures, Latent damages and damage interpretation, ESD modelling and measurement techniques, CMOS latch-up characterisation and modelling
Reliability and Failure Analysis in Specialist Devices
Power semiconductor devices, Optoelectronic devices, Compound semiconductors, Micro Electro-Mechanical Systems
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