P.E. BAGNOLI, C. CASAROSA, M. CIAMPI, E. DALLAGO, "Thermal resistance analysis by induced transient (TRAIT) method for power electronic devices thermal characterization - Part I: Fundamentals and theory", IEEE Transactions on Power Electronics, Vol. 13, N
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Titre : P.E. BAGNOLI, C. CASAROSA, M. CIAMPI, E. DALLAGO, Thermal resistance analysis by induced transient (TRAIT) method for power electronic devices thermal characterization - Part I: Fundamentals and theory, IEEE Transactions on Power Electronics, Vol. 13, No. 6, November 1998, pp. 1208-1219.

Cité dans :[REVUE526] IEEE Transactions on Power Electronics, Volume 13, Issue 6, November 1998.
Cité dans : [ART574]  P.E. BAGNOLI, C. CASAROSA, M. CIAMPI, E. DALLAGO, Thermal resistance analysis by induced transient (TRAIT) method for power electronic devices thermal characterization - Part II: Practice and experiments, IEEE Transactions on Power Electronics, Vol. 13,
Cité dans : [DIV442]  Recherche sur les mots clés THERMAL RESISTANCE, juillet 2004.
Auteur : Bagnoli, Paolo Emilio (Universita' di Pisa, Pisa, Italy)
Auteur : Casarosa, Claudio
Auteur : Ciampi, Mario
Auteur : Dallago, Enrico

Source : IEEE Transactions on Power Electronics
Volume : 13
Numéro : 6
Date : November 1998
Pages : 1208 - 1219
CODEN : ITPEE8
ISSN : 0885-8993
Année : 1998
Document_Type : Journal
Treatment_Code : Theoretical
Language : English
Stockage : Thierry LEQUEU
Lien : private/BAGNOLI1.pdf - 264 Ko, 12 pages.

Vers : Bibliographie

Abstract :
In this paper, a careful theoretical analysis of the thermal dynamics of an electronic device and its package was carried out in order to study the problem of the equivalent thermal circuit implementation.It was found that the device temperature evolution in time is ruled by an infinite and convergent series of time constants.The knowledge of the first n terms of the time-constant spectrum obtained from the temperature transient measurements allows the complete characterization of a suitable and reliable equivalent thermal circuit structured as a Cauer low-pass network with n cells.The total thermal resistance is therefore evaluated as a sum of several contributions due to given parts of the whole system.The techniques allowing the physical identifications of these contributions are also discussed.Furthermore, the influence of plastic coverage on the device thermal behavior is taken into account.The proposed characterization method is also applied to one-dimensional (1-D) multilayered simulated structures in order to study the influence of the number of time constants used for the analysis and effects of local defects or modifications of the material thermal properties.(Author abstract)

Accession_Number : 1999(3):5444 COMPENDEX


Bibliographie

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Références : 20 Refs.
[1] : M. N.Ozisic, Heat Conduction, New York: Wiley, 1980.
[2] : E. J.Diebold and W.Luft, "Transient thermal impedance of semiconductor devices," AIEE Trans., pt. J, vol. 79, pp. 719, 1961.
[3] : W. E.Newell, "Transient thermal analysis of solid-state power devices—Making a dreaded process easy," PESC 1975 Rec., pp. 234.
[4] : J. W.Sofia, "Analysis of thermal transient data with systemized dynamic models for semiconductor devices," Proc. SEMITHERM'94 San Jose, CA, pp. 78-85.
[5] : E.Farjah, C.Schaeffer, and R.Perret, "Experimental thermal parameter extraction using nondestructive tests," Proc. EPE'95 Conf. Sevilla, Spain, vol. 1, pp. 1.245-1.248.
[6] : V.Szekely, "A new evaluation method of thermal transient measurement results," Int. Workshop on Thermal Investigations of IC's and Microstructures Grenoble, France, pp. 108-114, Sept. 1995.
[7] : V.Szekely, M.Rencz, and B.Courtois, "Thermal transient testing," Proc. ISHM'96 Conf., pp. 18-23, 1996.
[8] : V.Szekely and T.Van Bien, "Fine structure of heat flow path in semiconductor devices: A measurement and identification method," Solid State Electron., vol. 31, pp. 1363-1368, 1988.
[9] : A.Piccirillo, G.Oliveti, M.Ciampa, and P. E.Bagnoli, "Complete characterization of laser diode thermal circuit by voltage transient measurements," Electron. Lett., vol. 29, pp. 318-320, 1993.
[10] : P. E.Bagnoli, A. A.Piccirillo, S.Mottet, M.Thual, G.Oliveti, and M.Ciampa, "Experimental analysis of laser diode thermal characteristics by voltage transient measurements," Proc. ESSDERC Conf. Grenoble, France, pp. 287-290, 1993.
[11] : V.Kadambi and N.Abuaf, "An analysis of the thermal response of power chip packages," IEEE Trans. Electron Devices, vol. ED-3, pp. 1024-1033, 1973.
[12] : C.Casarosa and M.Ciampi, "Modello conduttivo per l'analisi termica di strutture multistrato in elettronica," Proc. 49$^\circ$ ATI National Conf. Perugia, Italy, pp. 227-245, 1994.
[13] : E. A.Guillemin, Synthesis of Passive Networks, New York: Wiley, 1957.
[14] : T.Hopkins, C.Cognetti, and R.Tiziani, "Designing with thermal impedance," Proc. 4th IEEE Semiconductor Thermal and Temperature Measurement Symp. San Diego, CA, pp. 55, 1988.
[15] : S.Konrad, "Thermal behavior of power modules in PWM-inverter," Proc. EPE'95 Conf. Sevilla, Spain, vol. 1, pp. 1.565-1.570.
[16] : P. E.Bagnoli, C.Casarosa, E.Dallago, and M.Nardoni, "Thermal resistance analysis by induced transient (TRAIT) method for power electronic devices thermal characterization—Part II: Practice and experiments," IEEE Trans. Power Electron., vol. 13, no. 6, pp. 1220-1228, 1998.
[17] : P. E.Bagnoli, C.Casarosa, M.Ciampi, E.Dallago, and G.Sassone, "Applicazione dell'analisi TRAIT a strutture simulate," in Italian, Proc. III Workshop A.S.T.E. Turin, Italy, Jan. 1995.
[18] : A.Maierna, M.Bezza, P. E.Bagnoli, C.Casarosa, E.Dallago, and F.Perotti, "Experimental characterization of automotive electronic packaging by TRAIT method: Preliminary results," Proc. ISHM Conf. Milan, Italy, pp. 209-216, June 1994.
[19] : P. E.Bagnoli, C.Casarosa, E.Dallago, G.Sassone, and A.Maierna, "Thermal resistance analysis by induced transient (TRAIT) applied to power electronic device packaging," Proc. EPE'95 Conf. Sevilla, Spain, vol. 3, pp. 3.322-3.327, Sept. 1995.
[20] : C.Casati and C.Cognetti, A new high power IC package: Power SO 20TM, ser. SGS Thomson Microelectronics Application Note, 1994.

  [1] :  [ART574]  P.E. BAGNOLI, C. CASAROSA, M. CIAMPI, E. DALLAGO, Thermal resistance analysis by induced transient (TRAIT) method for power electronic devices thermal characterization - Part II: Practice and experiments, IEEE Transactions on Power Electronics, Vol. 13,


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