S. AZZOPARDI, A. KAWAMURA, H. IWAMOTO, O. BRIAT, J.M. VINASSA, E. WOIRGARD, C. ZARDINI, "Local lifetime control IGBT structures : Turn-off performances comparison for hard- and soft-switching between 1200V trench PT- and new planar PT-IGBTs", Microelectro

S. AZZOPARDI, A. KAWAMURA, H. IWAMOTO, O. BRIAT, J.M. VINASSA, E. WOIRGARD, C. ZARDINI, "Local lifetime control IGBT structures : Turn-off performances comparison for hard- and soft-switching between 1200V trench PT- and new planar PT-IGBTs", Microelectro Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [ART557]

Titre : S. AZZOPARDI, A. KAWAMURA, H. IWAMOTO, O. BRIAT, J.M. VINASSA, E. WOIRGARD, C. ZARDINI, Local lifetime control IGBT structures : Turn-off performances comparison for hard- and soft-switching between 1200V trench PT- and new planar PT-IGBTs, Microelectronics Reliability, Vol. 41, No. 9-10, September-October 2001, pp. 1731-1736.

Cité dans :[REVUE279] Elsevier Science, Microelectronics Reliability, Volume 41, Issues 9-10, Pages 1273-1736, September - October 2001.
Cité dans : [PAP374]  S. AZZOPARDI, A. KAWAMURA, H. IWAMOTO, O. BRIAT, J.M. VINASSA, E. WOIRGARD, C. ZARDINI, Local lifetime control IGBT structures : Turn-off performances comparison for hard- and soft-switching between 1200V trench PT- and new planar PT-IGBTs, ESREF'2001,
Cité dans : [DIV289]  Recherche sur l'auteur Christian ZARDINI, juillet 2004.
Cité dans : [DIV432]  Recherche sur l'auteur Stéphane AZZOPARDI, juillet 2004.
Cité dans : [DIV441]  Recherche sur l'auteur Eric WOIRGARD, juillet 2004.

Auteur : S. Azzopardi (a)
Auteur : A. Kawamura (b)
Auteur : H. Iwamoto (c)
Auteur : O. Briat (a)
Auteur : J.M. Vinassa (a)
Auteur : E. Woirgard (a)
Auteur : C. Zardini (a)

Adresse :
(a) IXL - UMR CNRS 5818, University Bordeaux 1 - 351 cours de la Liberation, 33405 Talence, France
(b) Yokohama Nat. Univ., Kawamura Lab., 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501 Japan
(c) Power Device Div., Mitsubishi Electric Co., 1-1-1 Imajyukuhigashi, Nishi-ku, Fukuoka 819-0192 Japan

Site : http://www.elsevier.com/locate/microrel
Source : Microelectronics Reliability
Volume : 41
Numéro : 9-10
Date : September - October 2001
Pages : 1731 - 1736
Lien : private/AZZOPARDI5.pdf - 6 pages, 651 Ko.

Abstract :
More expensive than the gold/platinum diffusion and the electron irradiation processes, the local lifetime control
process using proton irradiation allows improving relatively well the devices performances. Applied to IGBTs, this
process can minimize the magnitude of the current tail during turn-off when the temperature increases. The goal of the
local lifetime control is to minimize the rise of the gain of the PNP bipolar transistor as well as the rise of the minority
carrier lifetime. To evaluate the efficiency of that process, the following study presents a comparative analysis of
turn-off switching performances for hard- and soft-switching at high temperature of 1200V new types of IGBT. In
order to give an overview of the local lifetime control process effect, both trench and new planar IGBTs
performances have been investigated at high temperature and compared to conventional planar IGBT using global
lifetime control. Current and voltage waveforms and turn-off switching losses are analyzed. Results show that the
local lifetime control process is very efficient under hard-switching and zero-voltage switching, but this is not the case
under zero-current switching, especially for the new planar IGBT.

Bibliographie

Références : 12
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