H. R. ZELLER, "Cosmic ray induced failures in high power semiconductor devices", Microelectronics and Reliability, Volume 37, Issues 3, March 1997, pp. 534.

H. R. ZELLER, "Cosmic ray induced failures in high power semiconductor devices", Microelectronics and Reliability, Volume 37, Issues 3, March 1997, pp. 534. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [ART265]

Titre : H. R. ZELLER, Cosmic ray induced failures in high power semiconductor devices, Microelectronics and Reliability, Volume 37, Issues 3, March 1997, pp. 534.

Cité dans :[REVUE333] Elsevier Science, Microelectronics Reliability, Volume 37, Issue 3, Pages 381-547, March 1997.
Cité dans : [ART260]  H. R. ZELLER, Cosmic ray induced failures in high power semiconductor devices, Microelectronics and Reliability, Volume 37, Issues 10-11, 11 October 1997, pp. 1711-1718.

Auteur : H. R. Zeller

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Source : Microelectronics and Reliability
Volume : 37
Issues : 3
Date : March 1997
Pages : 534
DOI :
PII : S0026-2714(97)87793-1
Lien : private/ZELLER2.pdf - 95 Ko, 1 pages.
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Abstract :
Recently it was discovered that cosmic rays can induce failures in large area,
high voltage power semiconductors. The effect is of considerable practical
significance and has caused a series of equipment malfunctions in the field. We
show that earlier attempts to model the physical process of failure are
inadequate and introduce a new model. From the new model we derive a
phenomenological law for the failure rate as a function of simple design
parameters. The law has only two adjustable parameters and the parameters have a
simple physical interpretation. In particular the parameter which describes the
slope of the extrapolation curve from test to field conditions can be calculated
from first principles and shows good agreement with the experimentally found
value. This gives high confidence in the validity of the extrapolation law. We
give mathematical expressions and diagrams to quantify the safe operating
conditions with respect to the cosmic ray failure mode for all high voltage
power devices. This allows the user to design reliable power electronic
equipment and the semiconductor manufacturer to design devices virtually immune
against this failure mode.

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