Article : [ART190]

Info : REPONSE 5, le 06/05/2002.

Titre : Thermal analysis of power cycling effects on high power IGBT modules by the boundary element method, 2001.

Cité dans : [DIV334]  Recherche sur les mots clés power cycling of power device, mai 2002.
Cité dans :[SHEET355]

Meeting : 17th Annual IEEE Semiconductor Thermal Measurement Symposium.
Info : organization : IEEE
Location : San Jose, CA, United States
Source : Annual IEEE Semiconductor Thermal Measurement and Management Symposium 2001.p 27-34, (IEEE cat n 01CH37189)
CODEN : ASTSFA
ISSN : 1065-2221
Année : 2001
Meeting_Number : 58204
Document_Type : Conference Article
Treatment_Code : Theoretical; Experimental
Language : English
Stockage :
Switches : IGBT

Abstract :
The technology of high power IGBT modules has been significantly
improved these last years against thermal fatigue. Nowadays, the most
frequently observed failure mode, due to thermal fatigue, is the solder
cracks between the copper base plate and the DCB (Direct Copper Bonding)
substrate. Specific simulation tools are needed to carry out reliability
researches and to develop device lifetime models. In other respects,
accurate temperature and flux distributions are essential when computing
thermomechanical stresses in order to assess the lifetime of high power
modules in real operating conditions. This study presents an analysis
method based on the boundary element method (BEM) to investigate thermal
behavior of high power semiconductor packages submitted to power cycling
constraints. The paper describes the boundary integral equation which has
been solved using the BEM and applied to the case of a high power IGBT
module package (3.3kV-1.2kA). A validation of the numerical tool is
presented by comparison with experimental measurements. Finally, the paper
points out the effect of the IGBT silicon chips position on the DCB
substrate on the thermal constraints. In particular, a light shifting of
the silicon chips may be sufficient to delay significantly the initiation
and the propagation of the cracks, allowing a higher device lifetime of
the studied module.

Références : 12 Refs.

Accession_Number : 2001(28):2743 COMPENDEX

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