J.-L. SANCHEZ, M. BREIL, P. AUSTIN, J.-P. LAUR, J. JALADE, B. ROUSSET, H. FOCH, "A new high-voltage integrated switch: the 'Thyristor dual' function", ISPSD'99.
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Article : [99ART125]

Titre : J.-L. SANCHEZ, M. BREIL, P. AUSTIN, J.-P. LAUR, J. JALADE, B. ROUSSET, H. FOCH, A new high-voltage integrated switch: the 'Thyristor dual' function, ISPSD'99.

Cité dans : [CONF007] ISPSD, Internationnal Symposium on Power Semiconductor Devices & Integrated Circuits
Cité dans :[99DIV112] Publications du LAAS, janvier 2000.
Cité dans : [DIV203]  Recherche sur les mots clés THYRISTOR* et DUAL*, le 30 mars 2001.
Cité dans :[99ART124]

Auteur : Sanchez, J.-L.
Auteur : Breil, M.
Auteur : Austin, P.
Auteur : Laur, J.-P.
Auteur : Jalade, J.
Auteur : Rousset B.
Auteur : Foch, H. - Lab. d'Autom. et d'Anal. des Syst., CNRS, Toulouse, France

Lien : private/764086.pdf - 4 pages, 461 Ko.
Lien : 99ART124.HTM#Bibliographie - référence [].
Stockage : Thierry LEQUEU
Source : Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Pages : 157 - 160
Date : 26-28 May 1999
ISBN : 0-7803-5290-4
Info : IEEE Catalog Number: 99CH36312
Info : Total Pages : xxiii+359

Abstract :
In this paper, a new monolithic integrated device providing the
"thyristor dual" function without auxiliary supply and based on
the functional integration mode is investigated. The influence of
the physical and technological parameters of this new structure
upon the main electrical characteristics and the physical
behaviour has been analyzed using the ATLAS software tool. An
optimized device is proposed and test structures have been
fabricated.

Subject_terms :
MOS-controlled thyristors; high-voltage integrated switch; thyristor dual function switch; monolithic integrated device;
auxiliary supply; functional integration mode; physical parameters; technological parameters; electrical characteristics;
physical behaviour; ATLAS software tool; optimized device; test structures

Accession_Number : 6475711


Bibliographie

TOP

References : 6
[1] : J-L. Sanchez, P. Austin, R. Berriane, M. Marmouget, "Trends in design and technology for new power integrated devices based an Functional Integration", EPE97 September 8-10, 1997. Trondheim Norway, pp. 1.302-1307.
[2] : Pezzani, R.; Quoirin; J.-B. ; "Functional integration of power devices : a new approach", 6th European Conference on Power Electronics and Applications (EPE'95), Sevilla (Spain), September 19-21, 1995.
[3] : M. Breil, J.-L. Sanchez, "Analytical model for the optimisation of the turn-off performance of a self-firing MOS-Thyristor device.' EPE'97 Trondheim, Norway, pp 1.042-3.048.
[4] : Temple, V.A.K.: MOS Controlled Thyristors (MCT's), IEDM Tech, dig., 1984, pp 282.
[5] : Seki, Y., Iwamuro, N. : Dual Gate MOS Thyristor(DGMOT), ISPSD 1993, Monterey.
[6] : Nandakumar, M., Baliga. B.J., Shekar M.S., Tandon, S., Reisman, A, : The Base Resistance controlled Thyristor (BRT), a new MOS gated power thyristor, IEEE 1991.
  [1] :  [PAP007]  J.-L. SANCHEZ, P. AUSTIN, R. BERRIANE, M. MARMOUGET, Trends in design and technology for new power integrated devices based on functional integration, EPE'97, Trondheim, vol. 1, pp. 302-307.
  [2] :  [PAP116]  R. PEZZANI, J.-B. QUOIRIN, Functional integration of power devices : a new approach, EPE'95 Seville, pp 2.219-2.223, 1995.
  [3] : [99ART127] M. BREIL, J.-L. SANCHEZ, Analytical model for the optimization of the turn-off performance of a self-firing MOS-Thyristor device, EPE'97.
  [4] : [99ART134] V.A.K. TEMPLE, MOS Controled Thyristors (MCT's), IEDM tech, digest, pp. 282-285, 1984.
  [5] : [99ART128] Y. SEKI, N. IWAMURO, Dual Gate MOS Thyristor (DGMOT), ISPSD'93, Monterey.
  [6] : [99ART133] M. NANDAKUMAR, B.J. BALIGA, The Base Resistance controlled Thyristor (BRT), a new MOS gated power thyristor, IEEE transaction on Electron Devices, pp. 1138-1141, 1991.


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