See : http://www.physik.tu-berlin.de/institute/IFFP/richter/e-mrs99-SympP.htm
Symposium Organizers:
J.-T. ZETTLER, Technische Universität Berlin, Institut für Festkörperphysik, Berlin, Germany
O.D. HUNDERI , University of Trondheim, Norwegian Institute of Technology, Department of Physics, NTH, Trondheim, Norway
R. DEL SOLE, Universita’ di Roma "Tor Vergata", Dipartimento di Fisica, Roma, Italy
Tuesday June 1, 1999 - Morning
Mardi 1er juin 1999, Matin
| 9:00-9:10 | OPENING | ||
| P-I.1 | 9:10-9:40 | -Invited- | THEORY OF SURFACE OPTICAL PROPERTIES, M. Onida, Rome, Italy |
| P-I.2 | 9:40-10:10 | -Invited- | OPTICAL CHARACTERIZATION OF SURFACES, D. Paget, Palaiseau, France |
| P-I.3 | 10:10-10:40 | -Invited- | OPTICAL SECOND HARMONIC SPECTRA OF Si(001) WITH H AND Ge AD-ATOMS: EXPERIMENT AND FIRST PRINCIPLES THEORY, M.C. Downer, P. Parkinson, D. Lim, J.I. Dadap, Department of Physics, University of Texas at Austin, Austin, TX 78712, USA; V.I.Gavrilenko and R.Wu, Department of Physics and Astronomy, California State University, Northridge, CA 91330, USA |
| P-I.4 | |||
| 10:40-11:00 | BREAK |
| PI/P1 | HIGH RESOLVED LIGHT SCATTERING AND SURFACE-SLOPE DETECTION FOR EXAMINATION OF OPTICAL SURFACES IN UHV, G. Schnasse and M. Henzler, Inst. für Festkörperphysik, Universitaet Hannover, Appelstrasse 2, 30167 Hannover, Germany; R. Kumpe, Wacker Siltronic AG, 84479 Burghausen, Germany |
| PI/P2 | VIBRATIONAL AND ELECTRONIC SPECTROSCOPIES AT ZnSe/GaAs INTERFACES; O. Pagès, A. Lazreg, J.P. Laurenti, M. Certier and R.L. Aulombard |
| PI/P3 | INTERFERENCE EFFECT, DEPHASING MECHANISMS IN X-RAY RAMAN SCATTERING BY ORIENTED SYMMETRICAL MOLECULES AND STRUCTURE DETERMINATION OF ADSORBATES, F. Kh. Gel'mukhanov, T.I. Privalov, Institute of Automation and Electrometry SB RAS, Russia, 630090 Novosibirsk, pr. Koptyga 1 ; H. Agren, Institute of Physics and Measurement Technology, Linkoping University, 581 83, Linkoping, Sweden |
| PI/P4 | IR-TRANSMISSION SPECTROSCOPY FOR INVESTI-GATION OF ELECTRONIC STRUCTURE AND MORPHOLOGY OF ULTRATHIN METAL FILMS, G. Fahsold, O. Krauth, J. Solbrig and A. Pucci, Institut für Angewandte Physik, Universität Heidelberg, Albert-Ueberle-Str. 3-5, D-69120 Heidelberg, Germany |
| PI/P5 | THE INFLUENCE OF THE SURFACE ON THE FORMING PHOTOSENSITIVE LAYERS, V.G. Pavlov and S.B. Novikov, Moscow State Institute of Electronic Engineering, Technical University, Russia |
| P-II.1 | 11:00-11:30 | -Invited- | CHEMICAL MODULATION TECHNIQUES FOR IN-SITU OPTICAL CHARACTERIZATION OF III-V SURFACES IN MBE, F. Briones, Madrid, Spain |
| P-II.2 | 11:30-12:00 | -Invited- | STATIC AND GROWING InP AND InAs SURFACES: REFLECTION-ANISOTROPY SPECTROSCOPY UNDER THE CONDITIONS OF SOLID-SOURCE MBE, K.B. Ozanyan*, P.J.Parbrook, M.Hopkinson* and C.R.Whitehouse, Interdisciplinary Research Centre for Semiconductor Materials, EPSRC Central Facility for III-V Semiconductors, Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, UK ; *Currently at: Department of Electrical Engineering and Electronics, UMIST, POBox 88, Manchester M60 1QD,UK_ |
| P-II.3 | 12:00-12:15 | IN-SITU MONITORING OF MOVPE-GROWN DISTRIBUTED BRAGGS REFLECTOR STRUCTURES USING REFLECTANCE ANISOTROPY SPECTROSCOPY, A. Bhattacharya, K. Haberland*, M. Nasarek, M. Weyers, J.T. Zettler* and W. Richter*, Ferdinand-Braun-Institut für Höchstfrequenztechnik, Rudower Chaussee 5, 12489 Berlin, Germany ; *Technische Universität Berlin, Institut für Festkörperphysik, Sekr. PN 6-1, Hardenbergstr. 36, 10623 Berlin, Germany | |
| P-II.4 | 12:15-12:30 | REAL TIME SPECTROSCOPIC ELLIPSOMETRY FROM 1.5 TO 6.5 eV, J.A. Zapien, R.W. Collins and R. Messier, Department of Engineering Science & Mechanics and the Materials Research Laboratory, The Pennsylvania State University, University Park PA 16802, USA | |
| 12:30-14:00 | LUNCH |
Tuesday June 1, 1999 - Afternoon
Mardi 1er juin 1999, Après-midi
| P-II.5 | 14:00-14:30 | -Invited- | IN-SITU MONITORING AND CONTROL OF MOVPE GROWTH BY COMBINED RDS AND ELLIPSOMETRY MEASUREMENTS, M. Ebert, K.A. Bell, S.D. Yoo and D.E. Aspnes, NCSU, PO Box 8202, 27695 Raleigh, NC USA |
| P-II.6 | 14:30-14:45 | REAL TIME SPECTROSCOPIC ELLIPSOMETRY MONITORING OF SiC GROWTH DURING THE INTERACTION PROCESS OF ELEMENTAL CARBON WIHT Si SURFACES, T. Wöhner, V. Cimalla, T. Stauden F. Eichhorn, J. Pezoldt, TU Ilmenau, Institut für Festkörperelektronik, Postfach 100565, 98684 Ilmenau, Germany | |
| P-II.7 | 14:45-15:00 | VARIABLE ANGLE SURFACE PHOTOABSORPTION (SPA) OF DEOXIDATION OF III-V WAFERS, D.A. Allwood, N.J. Mason, R.J. Nicholas and P.J. Walker; *Clarendon Laboratory, University of Oxford, Parks Road, Oxford OX1 3PU, UK | |
| P-II.8 | 15:00-15:15 | REFLECTANCE DIFFERENCE SPECTROSCOPY OF ENHANCED MN INTRA-ION TRANSITIONS IN P-DOPED DILUTED MAGNETIC SEMICONDUCTORS, A.Bonanni, H. Sitter and K. Hingerl Institute for Semiconductor Physics, Johannes Kepler University, Linz, Austria; D. Stifter; Profactor GmbH, Wehrgrabengasse 5, Steyr, Austria | |
| P-II.9 | 15:15-15:30 | IN SITU CHARACTERIZATION OF BORON NITRIDE LAYER GROWTH BY POLARIZED FTIR REFLECTION SPECTROSCOPY, P. Scheible, L. Ulrich and A. Lunk, Institut für Plasmaforschung, Universität Stuttgart, Pfaffenwaldring 31, 70569 Stuttgart, Germany | |
| 15:30-16:00 | BREAK |
| PII/P1 | REFLECTANCE ANISOTROPY-BASED OPTICAL SENSORS FOR Reflectance anisotropy-based optical sensors for realtime monitoring of epitaxial growth, K. Haberland1, M. Zorn1, P. Kurpas2, A. Bhattacharya2, M. Weyers2, J.-T. Zettler1 and W. Richter1, 1Technische Universität Berlin, Institut für Festkörperphysik, Sekr. PN 6-1, Hardenbergstr. 36. 10623 Berlin, Germany, 2Ferdinand-Braun-Institut für Höchstfrequenztechnik, Rudower Chausse 5, 12489 Berlin, Germany |
| PII/P2 | AN ALGORITHM TO DETERMINE THE COMPOSITION AND GROWTH RATE FROM IN-SITU TAKEN SPECTRAL ELLIPSOMETRY DATA, G. Neuwirt, K. Hingerl, D. Stifter*, A. Bonnani, K. Bierleutgeb and H. Sitter, Department of Solid State Physics, Institute of Semiconductor and Solid State Physics, University of Linz, Altenbergerstr. 68, 4040 Linz, Austria, *Profactor GmbH, Wehrgrabengasse 5, 4400 Steyr, Austria |
| PII/P3 | IN-SITU SECOND HARMONIC SPECTROSCOPY OF SURFACE vs. BULK BORON-DOPED Si(001), D.Lim, J. G. Ekerdt, M. C. Downer, Center for Synthesis, Growth and Analysis of Electronic Materials, University of Texas at Austin, Austin, TX 78712, USA |
| PII/P4 | REAL-TIME MULTIWAVELENGTH ELLIPSOMETRY DIAGNOSTICS FOR MONITORING DRY CLEANING OF Si WAFERS AND TiNx DEPOSITION, S. Logothetidis, Thessaloniki, Greece |
Wednesday June 2, 1999 - Afternoon
Mercredi 2 juin 1999, Après-midi
| P-III.1 | 14:00-14:30 | -Invited- | APPLICATIONS OF OPTICALLY DETECTED MAGNETIC RESONANCE IN SEMICONDUCTOR LAYERED STRUCTURES, Weimin M. Chen, Department of Physics and Measurement Technology, Linköping University, 581 83 Linköping, Sweden |
| P-III.2 | 14:30-15:00 | -Invited- | NONDESTRUCTIVE OPTICAL DEPTH PROFILING & REAL-TIME EVALUATION OF SPECTROSCOPIC DATA, M. Fried, Res. Inst. for Tech. Phys. and Mater. Sci., P.O.B. 49, 1525 Budapest, Hungary |
| P-III.3 | 15:00-15:15 | INVESTIGATION OF SiGe HETEROSTRUCTURES, B. Coonan, Cork, Ireland | |
| P-III.4 | 15:15-15:30 | VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY OF SixGe1-x / Si COMPOSITION GRADED PROFILE OF STRAINED HETEROSTRUCTURE FOR HETERO JUNCTION BIPOLAR TRANSISTOR (HBT), F. Ferrieu and J.L. Regolini, France Télécom, Centre National d’Etudes des Télécommunications, 38243 Meylan, France. | |
| 15:30-16 :30 | BREAK |
| P-IV.1 | 16:30-17:00 | -Invited- | SCANNING NEAR-FIELD OPTICAL MICROSCOPY ON III-V NANOSTRUCTURES, D. Pahlke, Technische Universität Berlin, Institut für Festkörperphysik, Sekr. PN 6-1, Hardenbergstr. 36, 10623 Berlin, Germany |
| P-IV.2 | 17:00-17:30 | -Invited- | CHARACTERIZATION OF SiC MBE LAYERS AND POLYTYPES BY SHG IN REFLECTION, M. Schillinger, Jena, Germany |
| P-IV.3 | 17:30-17:45 | FOURTH-ORDER NONLINEAR SPECTROSCOPY OF SEMICONDUCTOR INTERFACES, Y.-S. Lee, R. Kempf, J. Canterbury, O. A. Aktsipetrov, E. Mishina, and M. C. Downer, Center for Synthesis, Growth and Analysis of Electronic Materials, University of Texas at Austin, Austin, TX 78712, USA | |
| P-IV.4 | 17:45-18:00 | SECOND-HARMONIC GENERATION STUDIES OF Au AND Ag FILMS ON Si(111), T.G. Pedersen, K. Pedersen and T.B. Kristensen, Institute of Physics, Aalborg University, Denmark | |
| P-IV.5 | 18:00-18:15 | OPTICAL SECOND-HARMONIC PHASE SPECTROSCOPY OF THE Si(111)-SiO2 INTERFACE, D. Schuhmacher and G. Marowsky, Laser-Laboratorium Goettingen, Hans-Adolf-Krebs-Weg 1, 37077 Goettingen, Germany ; A.A. Fedyanin and O.A. Aktsipetrov, Department of Physics, Moscow State University, 119899 Moscow, Russia | |
| P-IV.6 | 18:15-18:30 | NONLINEAR OPTICAL DIAGNOSTICS OF Si-SiO2 BURIED INTRERFACES: DC-ELECTRIC FIELD INDUCED SECOND, THIRD AND FOURTH HARMONIC GENERATION IN MOS STRUCTURES, O.A. Aktsipetrov, E.D. Mishina, Department of Physics, Moscow State University, Moscow 119899, Russia, and M.C. Downer, Department of Physics, The University of Texas at Austin, Austin, TX 78712, USA | |
| P-IV.7 | 18:30-18:45 | SENSITIVITY OF SHG ON OXIDE DEPOSITION PROCESS PARAMETERS, T. Bobek, J. Stein, T. Lehmann, T. Dekorsy, H. Kurz, Institut für Halbleitertechnik II, RWTH-Aachen, 52074 Aachen, Germany |
Poster Session III
| PIII/P1 | TWO-BEAM NONLINEAR OPTICAL TECHNIQUE FOR CHARACTERIZATION OF SURFACE ROUGHNESS, A.S. Gruzdeva, V.E. Gruzdev, State Research Centre "S.I.Vavilov State Optical Institute", Birzhevaya Liniya 12, St.Petersburg 199034, Russia |
| PIII/P2 | NON LINEAR OPTICAL PROPERTIES OF SiC, S. Niedermeier, Friedrich-Schiller-Universität Jena, Institut für Optik und Quantenelektr., Max-Wien-Platz 1, 07743 Jena, Germany |
| PIII/P3 | CARRIER RELAXATION DYNAMICS IN GALLIUM NITRIDE LAYERS, H. Haag and R. Lévy, IPCMS/GONLO, UMR 7504 CNRS-ULP, 23 Rue du Loess, 67037 Strasbourg Cedex, France, O. Briot, S. Ruffenach-Clur and R.L. Aulombard, GES, URA 357 CNRS, Place Eugene Bataillon, 34095 Montpellier Cedex 05, France. |
| PIII/P4 | CHARACTERIZATION OF RECOMBINATION LIFETIME S IN SEMICONDUCTING MATERIALS, R.K. Ahrenkiel, S. Johnston, B.M. Keyes and R. Ellingson, National Renewable Energy Laboratory, Golden, Colorado 80401, USA |
| PIII/P5 | SPATIALLY AND TIME-RESOLVED INFRARED ABSORTION FOR OPTICAL AND ELECTRONIC CHARACTERIZATION OF INDIRECT BAND GAP SEMICONDUCTORS, V. Grivickas, and V. Bikbajevas, Institute of Material Research and Applied Sciences, Vilnius University, Saultekio 10, 2054 Vilnius, Lithuania, J. Linnros, and A. Galeckas, Department of Electronics, Royal Institute of Technology, Electrum 229, S-164 40 Kista-Stockholm, Sweden |
| PIII/P6 | NONDESTRUCTIVE OPTICAL CHARACTERIZATION OF THE SURFACE REGION IN BULK SEMICONDUCTORS AND HETEROSTRUCTURES, V. Mizeikis and K. Jarasiunas, Vilnius University, Sauletekio 9- III, 2040 Vilnius, Lithuania, N. Lovergine, Lecce University, Italy, K. Kuroda, Tokyo University, Japan. |
| PIII/P7 | TIME RESOLVED PHOTOLUMINESCENCE OF HOMO- AND HETERO-EPITAXIAL LAYERS OF InP GROWN ON GaAs SUBSTRATES, M.B. Derbali, IPEIMonastir, 5000 Monastir Tunisia, J. Meddeb, IPEI Sousse Tunisia, P. Abraham, Laboratoire Multimatériaux et Interfaces Université Lyon I, France |
| PIII/P8 | PHOTOLUMINESCENCE CHARACTERIZATION OF NON-RADIATIVE DEFECT DENSITY ON SILICON SURFACES AND INTERFACES AT ROOM TEMPERATURE, V.Yu.Timoshenko1,2, A.B.Petrenko1, Th.Dittrich2, W. Füssel3, J.Rappich3 (1Moscow State Lomonosov University, Faculty of Physics, 119899 Moscow, Russia; 2Technische Universität München, Physik Department E16, D-85747 Garching, Germany; 3Hahn-Meitner-Institut, Abt. Photovoltaik, Rudower Chaussee 5, 12489 Berlin, Germany |
| PIII/P9 | THE PECULIARITIES OF OPTICAL PROPERTIES OF FERROMAGNETIC SEMICONDUCTOR WITH DYNAMICAL GRATING ON HOT ELECRONS, O.Yu.Semchuk, Institute of Surface Chemistry NAS of Ukraine, 252022 Kyiv, Ukraine |
| PIII/P10 | PHOTOINDUCED SURFACE MICRODEFORMATIONS OF CHALCOGENIDE SEMICONDUCTORS: MECHANISM AND APPLICATIONS, V. Bivol and A. Andries, Center of Optoelectronics of Academy of Sciences of Moldova, 1 Academiei Str., 2028 Chisinau, Moldova Republic |
Thursday June 3, 1999 - Morning
Jeudi 3 juin 1999, Matin
| P-V.1 | 9:00-9:30 | -Invited- | INVESTIGATION OF 3C-SiC(001) SURFACE RECONSTRUCTIONS BY REFLECTANCE ANISOTROPY SPECTROSCOPY, Y. Borensztein, C. Beitia, LOS, U. Paris 6, case 80, 4 place Jussieu, 75252 Paris cedex 05, France; V. Derycke, F. Amy, F. Semond, P. Soukiassian, CEA/Saclay, SRSIM, Bt 462, 91191 Gif sur Yvette Cedex, France; G. Dujardin, A. Mayne, LPPM, Bat. 210, U. Paris-Sud, 91405 Orsay cedex, France |
| P-V.2 | 9:30-10:00 | -Invited- | OPTICAL CHARACTERIZATION OF WIDE-GAP SEMINCONDUCTORS, N.V. Edwards, Linköpings Universitet, Linköping, Sweden. |
| P-V.3 | 10:00-10:15 | IN-SITU MONITORING OFGaN MOVPE GROWTH BY SPECTROSCOPIC ELLIPSOMETRY IN THE DEEP UV, S. Peters, T. Schmidtling*, U.W. Pohl*, J.T. Zettler* and W. Richter*, SENTECH Instruments GmbH, Rudower Chaussee 6, 12484 Berlin, Germany ; *Technische Universität Berlin, Institut für Festkörperphysik, Sekr. PN 6-1, Hardenbergstr. 36, 10623 Berlin, Germany | |
| P-V.4 | 10:15-10:30 | Si DOPING OF CUBIC HETEROEPITAXIAL GaN LAYERS, G. Bentoumi, A. Deneuville, E. Bustarret, Laboratoire d’Etudes des Propriétés Electroniques des Solides, CNRS et Université de Grenoble, BP 166, 38042 Grenoble Cedex 9, France; B. Daudin, G. Feuillet, E. Martinez, Département de la Recherche Fondamentale sur la Matière Condensée, CEA/Grenoble, SPMM, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France and P. Aboughe-nze, Y. Monteil, Laboratoire des Multimatériaux et Interfaces, Université Claude Bernard Lyon 1, 43 Bd du 11 Novembre 1918, 69622 Villeurbanne Cedex, France | |
| 10:30-11:00 | BREAK | ||
| P-V.5 | 11:00-11:15 | OPTICAL PROPERTIES OF 3C-, 6H- AND 4H-SiC IN THE SPECTRAL RANGE FROM 2.5eV TO 25eV INVESTIGATED BY SPECTROSCOPIC ELLIPSOMETRY, C. Cobet*, K. Wilmers*,**, T. Wethkamp*,**, N.V. Edwards***, N. Esser* and W. Richter* ; *Technische Universität Berlin, Institut für Festkörperphysik, Sekr. PN 6-1, Hardenbergstr. 36, 10623 Berlin, Germany ; **Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany; ***IFM/Materiefysik, Linköpings Universitet, S-581 83 Linköping, Sweden | |
| P-V.6 | 11:15-11:30 | STRAIN IN CUBIC GaN FILMS VERSUS THEIR RESIDUAL HEXAGONAL GaN CONTENT, G. Bentoumi, A. Deneuville, E. Bustarret, Laboratoire d’Etudes des Propriétés Electroniques des Solides, CNRS et Université de Grenoble, BP 166, 38042 Grenoble Cedex 9, France and B. Daudin, G. Feuillet, Département de la Recherche Fondamentale sur la Matière Condensée, CEA/Grenoble, SPMM, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France | |
| P-V.7 | 12:00-12:15 | RAMAN AND ELECTROREFLECTANCE ANALYSIS OF INTERNAL ELECTRIC FIELDS IN ZNSE, V.Wagner, M.Becker, M.Weber, T.Füller, M.Korn, J.Geurts, Physikalisches Institut, Universität Würzburg, 97074 Würzburg, Germany | |
| P-V.8 | 12:15-12:30 | RAMAN ANALYSIS OF Lo PHONON-PLASMON COUPLED MODES AT ZnS:N/(n+, p+)-GaAs INTERFACES, O. Pagès, A. Lazreg, M. Certier, E. Cumba, O. Gorochov, D. Bormann, H. Aourag, Institut de Physique, Goupe de Spectrometrie des Interfaces, Universite de Metz, 1bd Arago, 57078 Metz, France | |
| 12:30-14:00 | LUNCH |
Poster Session IV
| PIV/P1 | IN-SITU MONITORING OF ZnS/GaP AND ZnSe/Gaas MOVPE GROWTH WITH REFLECTANCE ANISOTROPY SPECTROSCOPY AND SPECTROSCOPIC ELLIPSOMETRY, C. Meyne, M. Gensch, S. Peters*, U.W. Pohl, J.T. Zettler and W. Richter, Technische Universität Berlin, Institut für Festkörperphysik, Sekr. PN 6-1, Hardenbergstr. 36, 10623 Berlin, Germany ; *SENTECH Instruments GmbH, Rudower Chaussee 6, 12484 Berlin, Germany |
| PIV/P2 | LUMINESCENCE OF GaN LAYERS, T. Barfels, A. von Czarnowski, H.-J. Fitting, Physics Department, Rostock University, Universitaetsplatz 3, 18051 Rostock, Germany and J. Jansons, M. Springis, J. Gabrusenoks, I. Tale, A. Veispals, Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., 1063 Riga, Latvia |
| PIV//P3 | INFRA-RED REFLECTIVITY OF ION IMPLANTED AND PULSED EXCIMER LASER IRRADIATED 4H-SiC, C.D. Walton, D. Sands, M. Schlaf, P.H. Key, Department of Physics, University of Hull, Hull HU6 7RX, UK and C.J. Anthony, K.M. Brunson, M.J. Uren, DERA. Malvern, Worcs, WR14 3PS, UK |
| PIV/P4 | OPTICAL METHOD OF SILICON CARBIDE EPITAXIAL FILMS CHARACTERIZATION , A.V.Shturbin, I.E.Titkov, L.E.Vorobjev, St.Petersburg State Technical University, 195251 St.Petersburg, Russia Department of Semiconductor Physics and Nanoelectronics, and R.F.Witman, A.F.Ioffe Physico-Technical Institute RAS, 194021 St.Petersburg, Russia |
| PIV/P5 | PROPERTIES OF DOPED ZnO THIN FILMS DEPOSITED BY SPRAY PYROLYSIS AND MAGNETRON SPUTTERING, P. Nunes, L. Mendes, E. Fortunato, B. Fernandes, R. Martins, CENIMAT and CEMOP, Quinta da Torre, 2825-114 Caparica, Portugal |
| PIV/P6 | INFLUENCE OF SAPPHIRE SUBSTRATE ON THE EMISSION SPECTRA OF GaN BASED LIGHT EMITTING DIODES, V.E. Kudryashov, A.E. Yunovich, M.V.Lomonosov Moscow State University, Department of Physics, 119899 Moscow, Russia |
| PIV/P7 | RADIATIVE LIFETIME CALCULATION FOR CARBON NANOCLUSTERS IN GLASS MATRIX, S.F. Kharlapenko, S.V. Rotkin, Ioffe Institute, Politechnicheskaya 26, 194021 St. Petersburg, Russia |
| PIV/P8 | MODEL OF INTRINSIC MICROWAVE PHOTOCONDUCTIVITY OF POLYCRYSTAL DIAMOND, MICROWAVE PHOTOCUDUCTIVITY – A METHOD FOR INVESTIGATION OF LEVITATION ELECTRONS, A.G. Zacharov, N.A. Poklonki, V.S. Varichenko, Byelorussion State University, F. Skorina av. 4, 220050 Minsk, Beralrus |
| PIV/P9 | EFFECT OF ABOVE BAND-GAP ILLUMINATION ON STRUCTURE OF FREE EXCITON REFLECTION SPECTRA OF ZnSe, L. Bryja, Wroclaw, Poland |
Thursday June 3, 1999 - Afternoon
Jeudi 3 juin 1999, Après-midi
| P-VI.1 | 14:00-14:30 | -Invited- | OPTICAL SPECTROSCOPY ON PHOTOVOLTAIC MATERIALS AND DEVICES, R. Carius, ISI-PV, Forschungszentrum Jülich, 52425 Jülich, Germany |
| P-VI.2 | 14:30-15:00 | -Invited- | REAL TIME ANALYSIS OF AMORPHOUS AND MICRO- CRYSTALLINE SILICON FILM GROWTH BY ROTATING- COMPENSATOR MULTICHANNEL ELLIPSOMETRY, R.W. Collins, J. Koh, Y. Lee, A.S. Ferlauto, P.I. Rovira, and C.R. Wronski, The Pennsylvania State University, Center for Thin Film Devices, University Park PA 16802, USA. |
| P-VI.3 | 15:00-15:15 | ELLIPSOMETRIC STUDY OF THE CRYSTALLIZATION PROCESSES OF NANOSTRUCTURED AND AMORPHOUS SILICON, E. Garcia-Caurel, G. Viera, S. Bosch, E. Bertran and A. Canillas, Departament de Física Aplicada i Òptica, Universitat de Barcelona, Av. Diagonal 647, 08028 Barcelona, Spain | |
| P-VI.4 | 15:15-15:30 | ELLIPSOMETRIC ANALYSIS OF POLYSILICON LAYERS, B. Gruska, SENTECH Instruments GmbH, Rudower Chaussee 6, 12484 Berlin, Germany | |
| P-VI.5 | 15:30-15:45 | OPTICAL CHARACTERIZATION OF HYDROGENATED AMORPHOUS CARBON (a-C:H) THIN FILMS DEPOSITED FROM METHANE PLASMAS, J. Hong, A. Goullet and G. Turban, LPCM-IMN, 2 Rue de la Houssinière BP 32229 F-44322 Nantes cedex 03, France | |
| P-VI.6 | 15:45-16:00 | IN-SITU ELLIPSOMETRY ON HIGH RATE DEPOSITION OF a-Si:H THIN FILMS USING AN EXPANDING THERMAL PLASMA. A.H.M. Smets, M.C.M. van de Sanden and D.C. Schram, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands | |
| P-VI.7 | 16:00-16:15 | OPTICAL STUDIES OF TEMPERATURE-INDUCED TRANSFORM OF AMORPHOUS HYDROGENATED CARBON, A.V. Tolmatchev, A.A. Evstrapov, V.I. Ivanov-Omskii and S.G. Yastrebov, Ioffe Phys.-Tech. Inst., St.Petersburg 194021, Russia | |
| P-VI.8 | 16:15-16:30 | IN SITU SPECTROSCOPIC ELLIPSOMETRY FOR THE CHARACTERIZATION OF POLYSILICON FORMATION INSIDE A VERTICAL FURNACE, P. Petrik, , M. Fried, T. Lohner, J. Gyulai, Research Institute for Technical Physics and Materials Science, P.O.B. 49, 1525 Budapest, Hungary; W. Lehnert*, C. Schneider* and H. Ryssel*,**; *Fraunhofer-Insitut für Integrierte Schaltungen, Schottkystrasse 10, 91058 Erlangen, Germany, **Lehrstuhl für Elektronische Bauelemente, Friedrich-Alexander Universität Erlangen-Nürnberg, Cauerstrasse 6, 91058 Erlangen, Germany | |
| 16:30-17:00 | BREAK |
| PV/P1 | ROLE OF THE RF POWER ON DOS AND GROWTH RATE OF a-Si:H PRODUCED BY PECVD, (1),(4)G. Lavareda, (1),(4)C. Nunes de Carvalho, (1),(2)A. Amaral, (3)J. P. Conde, (5)M. Vieira, (6)V. Chu. (1)CFM-Complexo I; (2)DF; (3)DEMat; IST, Av. Rovisco Pais, 1000 LISBOA, Portugal; (4)DCM-FCT/UNL, Quinta da Torre, 2825 Monte de Caparica, Portugal; (5)DEEC-ISEL, Rua Cons. Emídio Navarro, 1900 Lisboa, Portugal;(6)INESC, Av. Rovisco Pais, 1000 Lisboa, Portugal. |
| PV/P2 | ROUGHNESS CHARACTERIZATION OF POLYSILICON SURFACE BY OPTICAL SPECTROELLIPSOMETRY, R. Radoi, S. Iovan, National Institute for R&D in Microtechnologies, PO Box 38-160, Bucharest, Romania; M. Gartner, Institute of Physical Chemistry "I.G.Murgulescu", Spl.Independentei 202, 77208 Bucharest, Romania; M. Modreanu, Nicoleta Nastase, National Institute for R&D in Microtechnologies, PO Box 38-160, Bucharest, Romania |
| PV/P3 | OPTICAL CHARACTERISATION OF ULTRATHIN SEMI-TRANSPARENT SILICON FILMS USING TRANSMISSION AND REFLECTION MEASUREMENTS, D. Davazoglou, NCSR "Demokritos", Institute of Microelectronics, P. O. Box 60228, 153 10 Agia Paraskevi Attiki, Greece. |
| PV/P4 | OPTICAL AND MICROSTRUCTURAL CHARACTERIZATION OF A-SION THIN FILMS DEPOSITED BY LPCVD, M. Gartner, Institute of Physical Chemistry, Splaiul Independentei 202, Bucharest 77208, Romania, S. Bosch, Universitat de Barcelona, Diagonal 647, 08028 Barcelona, Spain, M. Modreanu, National Institute for Microtechnologies PO Box 38-160, Bucharest 72225 Romania, Nicolae Tomozeiu, Faculty of Physics, University of Bucharest, PO Box 11 Mg, 5600, Bucharest, Romania and P. Cosmin Catalyst Semiconductor Inc., 1259 Borregas Avenue, Sunnyvale CA 94089, USA |
| PV/P5 | OPTICAL PROPERTIES OF SOME TRANSITION METALS DISILICIDES THIN FILMS IN AMORPHOUS AND CRYSTALLINE STATES. OPTICAL PROPERTIES OF AMORPHOUS AND CRYSTALLINE WSi2, FeSi2, MoSi2 and CrSi2 FILMS, Y.V.Kudryavtsev, Yu.N.Makogon*, S.I.Sidorenko* and T.T.Silakova ; Institute of Metal Physics, National Academy of Sciences of Ukraine, 36 Vernadsky street, Kiev-142, 252680, Ukraine ; * National Technical University "Kiev Politechnical Institute", 37 Prospect Peremogy,Kiev-56, 252056, Ukraine |
| PV/P6 | UV/VIS/NIR DETECTOR BASED ON µC-SI:H P-O-N STRUCTURES, M. Fernandez, R. Schwarz*, J. Martins, S. Koynov**, A. Maçarico and M. Vieira, Electronics and Communications Department, ISEL, Rua Conselheiro Emidio navarro, 1900 Lisboa, Portugal; *Dept. Physics, IST, Av. Rovisco Pais 1, Lisboa, Portugal; **CL-SENES, Bulgarian Academy of Sciences, Sofia, Bulgaria |
| PV/P7 | Optical characterization of porous silicon layers, V. Yerokhov, I. Melnyk, A. Tsisaruk, Semiconductor Electronic Department, State University "Lviv Polytechnic", Box 1050, 290045 Lviv, Ukraine |
Friday June 4, 1999 - Morning
Vendredi 4 juin 1999, Matin
| P-VII.1 | 8:30-9:00 | -Invited- | HIGH-FIELD TRANSPORT IN SUPERLATTICES: BLOCH OSCILLATIONS AND ZENER BREAKDOWN, F. Löser, B. Rosam, M. Sudzius, V.G. Lyssenko, G. Valusis, T. Hasche, M.M. Dignam, K. Köhler, K. Leo, Institut für Angewandte Photophysik, Technische Universität Dresden, 01062 Dresden, Germany |
| P-VII.2 | 9:00-9:30 | -Invited- | EXCITON DYNAMICS IN SEMICONDUCTOR NANOSTRUCTURES, J.M. Hvam, Copenhagen, Denmark |
| P-VII.3 | 9:30-9:45 | ABSORPTION SPECTRA OF ZnSe/CdSe-BASED PLANAR QD STRUCTURES , A.D. Andreev, R.M. Datsiev and R.P. Seisyan, A.F. Ioffe Institute, 194021 St.-Petersburg, Russia. | |
| P-VII.4 | 9:45-10:00 | RESONANT RAMAN SCATTERING IN (Al, Ga)N/GaN QUANTUM WELL STRUCTURES, J. Gleize, F. Demangeot, J. Frandon and M.A. Renucci, Laboratoire de Physique des Solides de Toulouse, Université Paul Sabatier, 118 route de Narbonne, 31062 Toulouse Cedex 4, France; M. Kuball, H.H. Wills Physics Laboratory, University of Bristol, Brisol BS8 1TL, UK and N. Grandjean, CNRS-Centre de Recherche sur l’Hétéro-épitaxie et ses Applications, rue B. Grégory, 06560 Valbonne, France | |
| P-VII.5 | 10:00-10:15 | OPTICAL INVESTIGATION OF InAs/InP QUANTUM DOTS AT DIFFERENT TEMPERATURES AND UNDER ELECTRIC FIELD, L. Landin, N. Carlsson, H. Pettersson, M-E Pistol, C. Pryor, L. Samuelsson, W. Seifert, Division of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden | |
| 10:15-10:45 | BREAK |
| PVI/P1 | OPTICAL CHARACTERIZATION OF THE NEW Ga1-xMnxAs SEMIMAGNETIC SEMICONDUCTOR, Th. Hartmann, Marburg, Germany |
| PVI/P2 | RESONANT RAMAN SCATTERING IN (Al, Ga)N/GaN QUANTUM WELL STRUCTURES, J. Gleize, F. Demangeot, J. Frandon and M.A. Renucci, Laboratoire de Physique des Solides de Toulouse, Université Paul Sabatier, 118 route de Narbonne, 31062 Toulouse Cedex 4, France; M. Kuball, H.H. Wills Physics Laboratory, University of Bristol, Brisol BS8 1TL, UK and N. Grandjean, CNRS-Centre de Recherche sur l’Hétéro-épitaxie et ses Applications, rue B. Grégory, 06560 Valbonne, France |
| PVI/P3 | PHONON-PLASMON INTERACTION IN GaAs/AlAs SLs WITH ARRAY OF GaAs SLABS AND QWWs AND TUNNEL AlAs BARRIERS. V.A.Volodin, M.D.Efremov, V.V.Preobrazhenski, B.R.Semyagin, Institute of Semiconductor Physics SB RAS, pr.Lavrentjeva 13, Novosibirsk 630090, Russia; V.V.Bolotov, Institute of Sensor Microelectronics SB RAS, pr.Mira 55a, Omsk 644077, Russia |
| PVI/P4 | INFLUENCE OF EXCITATION ENERGY ON CARRIER DYNAMICS IN GaAs/Al0.46Ga0.54As SUPERLATTICES, S. Kraïem, F. Hassen and H. Maaref, Laboratoire de Physique des Semiconducteurs, Département de Physique, Faculté des Sciences de Monastir, Monastir 5000, Tunisia, X. Marie and E. Vanelle, Departement de Genie Physique, INSA, Avenue de Rangueil, 31077 Toulouse, France. |
| PVI/P5 | ELECTROABSORPTION SPECTRA OF LAYERED AND NANOCRYSTALLINE PbMnI2, A.I. Savchuk, S.V. Medynskiy, I.D. Stolyarchuk, Dept. of Phys. Electronics, University of Chernivtsi, 274012 Chernivtsi, Ukraine |
| PVI/P6 | PHOTOREFLECTANCE SPECTROSCOPY OF COUPLED InxGa1-xAs/GaAs QUANTUM WELLS, G. Sek, K. Ryczko, M. Kubisa, J. Misiewicz, J. Koeth, A. Forchel; Insitute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50–370 Wroclaw, Poland; * Insitute of Physics, University of Wuerzburg, Am Hubland, 97074 Wuerzburg, Germany |
| PVI/P7 | PHOTOLUMINESCENCE STUDY OF AlAs/GaAs SUPERLATTICES CONTAINING ENLARGED WELLS, V.Donchev, K.Germanova, N.Shtinkov, Faculty of Physics, Sofia University, 5 J. Bourchier boul., Sofia-1164, Bulgaria, I.Ivanov, Dept. of Physics and Measurement Technol., Linköping University, Sweden, St.Vlaev, Inst. of General and Inorganic Chemistry, Bulg. Acad. of Sci., Sofia, Bulgaria |
| PVI/P8 | THE GaInPAs/InP-BASED HETEROLASERS EMITTING AT 1.06 MICROMETR, I. Ismailov, Physico-Technical Institute, Dushanbe, 299/1 Aini street, 734063 Tajikistan, U. Gafurov, Institute of Nuclear Physics, Ulugbek,Tashkent 702132, Uzbekistan |
| P-III.5 | 10:45-11:05 | THE DIELECTRIC RESPONSE FUNCTION IN EPITAXIAL SiGeC LAYERS GROWN ON Si. E. Finkman, Technion, Dept of Electrical Engineering, Haifa, Israel, J. Bonan, F. Meyer, Université Paris Sud, IEF, Orsay, France; P. Warren, EPFL, Lausanne, Switzerland. | |
| P-III.6 | 11:05-11:25 | CHARACTERIZATION OF THIN FILMS ON SEMICONDUCTOR SURFACES BY INFRA-RED ELLIPSOMETRY, A. Röseler, Berlin, Germany | |
| P-III.7 | 11:25-11:45 | ANALYSIS OF In (1-x)Ga(x)As(y)P(1-y) BASED LAYER STACKS USING SPECTROSCOPIC ELLIPSOMETRY IN THE NIR SPECTRAL RANGE, H. Bukkems, Delft University of Technology, Faculty of Information Technology and Systems, Mekelweg 4, 2628 CD Delft, The Netherlands, U. Richter, B. Gruska, SENTECH Instruments GmbH, Rudower Chaussee 6, 12484 Berlin, Germany | |
| P-III.8 | 11:45-12:00 | A NEW COMBINED SYSTEM INCLUDING SPECTROSCOPIC ELLIPSOMETRY AND GRAZING X-RAY REFLECTANCE, P. Boher and J.L. Stehle, SOPRA S.A., 26 rue Pierre Joigneaux, 92270 Bois-Colombes, France | |
| P-III.9 | 12:00-12:15 | OPTICAL PROPERTIES AND ENERGY BAND STRUCTURE OF Ru2Si3 ABND Ru2Ge3, W. Henrion and M. Rebien, Hahn-Meitner-Institut, Berlin, Rudower Chaussee 5, 12489 Berlin Germany; V.N. Antonov, Institute of Metal Physics, Ukrainian Academy of Sciences, Bernadskogo 36, 252142 Kiev, ukraine; O. Jepsen, Max-Planck-Institut für Festkörperphysik, Heisenbergstr. 1, 70569 Stuttgart, Germany | |
| P-III.10 | 12:15-12:30 | InGaP/GaAs HETEROJUNCTION-BIPOLAR-TRANSISTOR (HBT) ELECTRONIC PROPERTIES, M. Murtagh, G.R. Moriarty, J.T. Beechinor, P.V. Kelly and G.M. Crean, NMRC, Lee Maltings, Prospect Row, Cork, Ireland |
Poster Session VII
| PVII/P1 | FREQUENCY DOMAIN INTERFEROMETRIC SECOND HARMONIC SPECTROSCOPY, P. T. Wilson, Y. Jiang, O. A. Aktsipetrov,* E. Mishina,* M. C. Downer, Center for Synthesis, Growth and Analysis of Electronic Materials, University of Texas at Austin, Austin, TX 78712, USA |
| PVII/P2 | SPECTROSCOPIC ELLIPSOMETRY CHARACTERIZATION OF ADVANCED DIELECTRICS, V. Nayar, C. Pickering and J. Russell, DERA, St Andrews Road, Malvern, Worcs WR14 3PS, UK |
| PVII/P3 | TIME RESOLVED REFLECTIVITY MEASUREMENTS OF SILICON SOLID PHASE EPITAXIAL REGROWTH, M. Bauer, M. Oehme, M. Sauter, G. Eifler, E. Kasper, Institut fuer Halbleitertechnik, Universitaet Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany |
| PVII/P4 | OPTICAL CHARACTERIZATION OF THERMALLY OXIDIZED Si1-x-yGexCy, A. Cuadras, B. Garrido, C. Bonafos, J.R. Morante, Dept. d’Electronica, Univ. de Barcelona, Marti i Franques 1, 08028 Barcelona, Spain; L. Fonseca, Centre Nacional de Microelectronica, Campus UAB, 08193 Bellaterra, Spain; M. Franz, K. Pressel, Institute of Semiconductor Physics, Walter-Korsing-Str. 2, 15230 Frankfurt (Oder), Germany |
| PVII/P5 | OPTICAL DIELECTRIC FUNCTION OF SEMICONDUCTORS, A.B. Djurisic, Institute for Applied Photophysics, TU Dresden, Mommensenstr. 13, 01062 Dresden, Germany; E. Herbert Li, Department of Electrical & Electronic Engineering, University of Hong Kong, Pokfulam road, Hong Kong |
| PVII/P6 | A NEW COMBINED INSTRUMENT WITH UV-VISIBLE AND FAR INFRARED SPECTROSCOPIC ELLIPSOMETRY: APPLICATION TO SEMICONDUCTOR CHARACTERIZATION, P. Boher, J.P. Piel and J.L. Stehle, SOPRA S.A., 26 rue Pierre Joigneaux, 92270 Bois-Colombes, France |
| PVII/P7 | OPTICAL AND STRUCTURAL PROPERTIES OF InGaP/GaAs HETEROSTRUCTURES, G.R. Moriarty, J.T. Beechinor, M. Murtagh, M. Kildemo, J.C. Greer, P.V. Kelly and G.M. Crean, NMRC, Lee Maltings, Prospect Row, Cork, Ireland |
| PVII/P8 | LIGHT AND HEAVY HOLE EXCITONS IN ABSORPTION AND MAGNETOABSORPTION SPECTRA OF InGaAs/GaAs MQWs, Kh. Moumanis, R.P. Seisyan, S.I. Kokhanovskii, M.E. Sasin, A.F. Ioffe Physico-Technical Institute, 26 Politekhnicheskaya, 194021, Russia |
| PVII/P9 | ION IMPLANTATION INDUCED DAMAGE DEPTH PROFILE IN SILICON STUDIED BY ELLIPSOMETRY AND TUTHERFORD BACKSCATTERING SPECTROMETRY, T. Lohner, M. Kulik*, O. Polgar, M. Fried, P. Petrik, N.Q. Khanh, J. Gyulai, Research Institute for Technical Physics and Materials Science, P.O.B. 49, 1525 Budapest, Hungary; *Maria Curie-Sklodowska University, Pl. M.Curie-Sklodowskiej 1, 20-031 Lublin, Poland |
| PVII/P10 | DEFECT RELATED PHOTOLUMINESCENCE OF SiGe/Si HETEROSTRUCURES GROWN BY APCVD, J.L. Shi, L.K. Nanver, K. Grimm and C.C.G. Visser, Laboratory of ECTM, DIMES, Delft University of Technology, P.O. Box 5053, 2600 Delft, The Netherlands. |
| PVII/P11 | IMPACT OF NEUTRON IRRADIATION ON OPTICAL PERFORMANCE OF InGaAsP LASER DIODES, H. Ohyama, E. Simoen*, C. Claeys*, Y. Takami**, H. Sunaga*** and T. Kudou, Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-1102 Japan; *IMEC, Leuven, Belgium; **Rikkyo University, Japan; ***Takasaki JAERI, Japan |
| PVII/P12 | FABRICATION AND CHARACTERIZATION OF SEMICONDUCTOR-BASED MICROCAVITIES, B. Masenelli, S. Callard, A. Gagnaire, J. Joseph, LEOM UMR 5512, BP 163, 69131 Ecully Cedex, France |
| PVII/P13 | THE APPLICATION OF THE REFLECTION-ABSORPTION SPECTROSCOPY TO THE SEMICONDUCTOR THIN FILMS, J. Polit, E.M. Sheregii, E. Sciesi_ska, J. Sciesi_ski,Institute of Physics Pedag. Univ., Rzeszów, Poland |
| PVII/P14 | APPLICATION OF INFRARED EXTENDED SOURCE TRANSMISSION FOR BONDING CONTROL OF SILICON WAFERS, T. Piotrowski, W. Jung, Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland |
| PVII/P15 | DEPTH PROFILING OF GRADED INDEX STRUCTURES BY OPTICAL METHODS, D.A. Tonova and A.A. Konova, Department of Condensed Matter Physics, Sofia University, Bul. J. Bourchier 5, 1164 Sofia, Bulgaria |
| PVII/P16 | PHOTOVOLTAGE MEASUREMENT FOR CHARACTERIZATION OF InGaAs QUANTUM WELLS, J. Touskova, J. Tousek, Dpt. Semicond. Physics, Faculty of Mat. and Phys., Charles University, Ke Karlovu 5, 12116 Prague, Czech Republic and E. Hulicius, K. Pangrac, Institue of Phsyics of the Academy of Sciences, Cukrovarnicka 10, 16200 Prague, Czech Republic |
| PVII/P17 | ELECTROREFLECTANCE SPECTROSCOPY OF PLD Hg1-XCdXTe FILMS ON Si SUBSTRATES, R.Yu. Holiney, T.Ya. Gorbach, L.A. Matveeva, S.V. Svechnikov, E.F. Venger, ISP NASU, prospect Nauki, 45, 252028 Kyiv, Ukraine, M. Kuzma, G. Wisz, Institute of Physics, Higher Pedagogical School, Rejtana, 16a, 35-309 Rzeszow, Poland |
| PVII/P18 | ELLIPSOMETRIC STUDIES OF OPTICAL CONSTANTS OF ION IMPLANTED GaAs AND Si LAYERS, M. Kulik, J. Herec and J. Romanek, Institute of Physic, Maria Curie-Sklodowska University, Lublin, Poland |
| PVII/P19 | THERMOOPTICAL METHOD OF CARRIER DISTRIBUTION VISUALISATION IN SEMICONDUCTORS, T. Piotrowski, S. Sikorski, Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland. |
| PVII/P20 | ULTRAVIOLET RESPONSIVITY CONTROL IN SCHOTTKY BARRIER HETEROSTRUCTURES WITH TEXTURED INTERFACE, N.L. Dmitruk, O.Yu. Borkovskaya, I.B. Mamontova, O.I. Mayeva, O.B. Yastrubchak, Institute for Physics of Semiconductors, National Academy of Siences of Ukraine, 45 Prospect Nauki, 252650 Kyiv, Ukraine |
| PVII/P21 | OPTICAL AND PHOTOELECTRIC PROPERTIES OF PT, PZT AND PLZT THIN FILMS and INFRARED REFLECTIVITY SPECTRA PZT (52/48) AND COPPER DOPED PT THIN FILMS, N.R. Agamalyan, R-B. Kostanyan, R.K. Hovsepyan, Institute for Physical Research of National Academy of Science, Armenia, 37840 Ashtarak-2 and R-S. Vartanyan, S.G. Grigoryan, A.L. Manukyan, Armenian Institute of Applied Chemistry (ARIAK), 5 Archah av., 375005 Yerevan, Armenia |
| PVII/P22 | CHARACTERIZATION OF RESIDUAL CARBON IN UNDOPED SEMI - INSULATING GaAs BY LOW TEMPERATURE ( 77K) PHOTOLUMINESCENCE, K.D.Glinchuk, N.M.Litovchenko, A.V.Prokho-rovich, O.N.Strilchuk, Institute of the Physics of Semiconductors, National Academy of Sciences of Ukraine, pr.Nauki 45, 252028, Kiev 28, Ukraine |
| PVII/P23 | EFFECT OF IN SITU ULTRASOUND TREATMENT ON THE STRUCTURE OF ION-BEAM MODIFIED LAYER IN SILICON, B.N. Romanyuk, V.P. Melnik, V.A. Yuhimchuk N.I. Klyui, M.Ya. Valakh, Institute of Semiconductor Physics, 45 pr. Nauki, 252028 Kiev, Ukraine; D. Kruger, Institut fur Halbleiterphysik, Walter-Korsing-Strasse 2, 15230Frankfurt/Oder, Germany. |
| PVII/P24 | INFRARED SPECTROSCOPY OF TERNARY CHALCOGENIDE SEMICONDUCTORS FOR OPTICAL APPLICATION, O. Shpotyuk*,***, A.P. Kovalskiy*, R.Y. Golovchak**, T.S. Kavetskiy**, *Institute of Materials, SRC " Carat ", Stryjska Str. 202, 290031 Lviv, Ukraine; **Department of Physics, I. Franco Lviv State University, Dragomanov Str. 50, 290005 Lviv, Ukraine; ***Physics Institute, Pedagogical University of Czestochowa, Al. Armii Krajowej 13/15, 42201 Czestochowa, Poland |
| PVII/P25 | OPTICAL PROPERTIERS OF HETEROSTRUTURES BASED ON A2B6 MATERIALS, G. Khlyap, Pedagogical University, 24 Franko Str., 293720 Drogobych, Ukraine |
| PVII/P26 | THE USE OF VISIBLE- (VIS-SE) AND INFRARED SPECTROSCOPIC ELLIPSOMETRY (IR-SE) FOR THE CHARACTERIZATION OF SURFACE TREATED ALUMINUM, T. Schram, H.Terryn, Vrije Universiteit Brussel, Dept. of Metallurgy, Electrochemistry and Materials Science, Pleinlaan 2, 1050 Brussels, Belgium |
| PVII/P27 | RADIATIVE RECOMBINATION IN GRaDED-BANDGAP AlGaAs ALLOYS, V.F. Kovalenko, V.D. Malyshev and A.N. Sobko, FOTON R&T, PO BOX 214, Odessa 270113, Ukraine |
End of Symposium P
