SYMPOSIUM A - Photo-Excited Processes & Applications ("3-ICPEPA")
Symposium Organizers:
Aaron PELED, Electrical and Electronics Engineering Department, Center for Technological Education Holon, Holon, Israel
Peter HESS, Physikalisch-Chemisches Institut, Ruprecht-Karls-Universität, Heidelberg, Germany
Ian W. BOYD, Electronic & Electrical Engineering, University College London, London, UK
Mitsugu HANABUSA, Dept of Electrical and Electronic Engineering, Toyohashi Univ. of Technology, Toyohashi, Japan
Tuesday, June 1, 1999 - Morning
Mardi 1er Juin 1999, Matin
| A- I.1 | 9:00-9:30 | -Invited- | THE PHYSICAL MECHANISMS OF SHORT PULSE LASER ABLATION, D. von der Linde and K. Sokolowski-Tinte, Universität Essen, Institut für Laser- und Plasmaphysik, 45117 Essen, Germany |
| A-I.2 | 9:30-9:45 | STRATEGY OF NANOCLUSTER AND NANOSTRUCTURE SINTHESIS BY CONVENTIONAL PULSED LASER ABLATION, W. Marine, L. Patrone, B. Luk’yanchuk and M. Sentis, Groupement Interdisciplinaire Ablation Laser et Applications, UMR CNRS 6631 et UMR CNRS 6594, Faculté des Sciences de Luminy, Case 901, Marseille, France | |
| A-I.3 | 9:45-10:00 | ||
| 10:00-10:20 | BREAK |
| A-II.1 | 10:20-10:50 | -Invited- | EXCIMER LASER CRYSTALLIZATION TECHNIQUES FOR POLYSILICON TFTs, G.Fortunato, L.Mariucci, R.Carluccio, A.Pecora and V. Foglietti, IESS-CNR, via Cineto Romano 42, 00156-Roma, Italy |
| A-II.2 | 10:50-11:20 | -Invited- | LASER PRODUCTION AND DEPOSITION OF SILICON- AND CARBON-BASED CLUSTERS AND NANOPARTICLES, F. Huisken, MPI f. Strömungsforschung, Bunsenstr. 10, 37073 Göttingen, Germany |
| A-II.3 | 11:20-11:50 | -Invited- | PULSE-LASER-INDUCED CRYSTALLIZATION OF THIN Si FILMS, J.S. Im, R.S. Sposili, M.A. Crowder, A.B. Limanov, H.S. Cho, D.B. Kim and K. Adiv, Program in Materials Science and E,ngineering, School of Engineering and Applied Science, Columbia University, New York NY 10027, USA |
| A-II.4 | 11:50-12:05 | OPTIMIZATION OF PHASE-MODULATED EXCIMER-LASER CRYSTALLIZATION METHOD FOR ULTRA-LARGE GRAIN GROWTH OF Si THIN-FILMS, Chang-Ho Oh, Mitsuru Nakata and Masakiyo Matsumura, Dept. of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8550, Japan | |
| 12:05-13:30 | LUNCH |
Tuesday, June 1, 1999 - Afternoon
Mardi 1er Juin 1999, Après-midi
| A-III.1 | 13:30-14:00 | -Invited- | FUTURE TRENDS IN HIGH RESOLUTION LITHOGRAPHY, R A Lawes, Central Microstructure Facility, Rutherford Appleton Laboratory, Chilton, Didcot OX11 0QX, UK |
| A-III.2 | 14:00-14:15 | PROGRESS IN SUBMICRON DRY ETCHING AND EFFICIENCY ENHANCEMENT BY VUV LIGHT : Cu, GaAs and Cl2, H. Raaf, M. Groen and N. Schwentner, Inst. f. Experimentalphysik, Freie Universität Berlin, Arnimallee 14, 14195 Berlin, Germany | |
| A-III.3 | 14:15-14:30 | GROWTH OF TRANSPARENT SiO2/SiO THIN FILM AT ROOM TEMPERATURE BY EXCIMER LAMP, M. Murahara and H. Iizuka, Department of Electrical Engineering, Tokai University, 117 Kitakaname, Hiratuka, Kanagawa, Japan | |
| A-III.4 | 14:30-14:45 | HYPERTHERMAL BEAMS FOR THE FABRICATION OF THERMOELECTRIC THIN FILMS, H.-A. Durand, K. Nishimmoto, K. Ito, I. Kataoka, Japan Aviation Electronics Industry Ltd, Central Research Laboratory, Masashino 3-1-1, Akishima-shi, Tokyo 196-8555, Japan | |
| A-III.5 | 14:45-15:00 | DESORPTION DYNAMICS IN THE UV ABLATION OF MODEL MOLECULAR SOLIDS, A. Koubenakis and S. Georgiou, Institute of Electronic Structure & Laser, FO.R.T.H., PO Box 1527, 711 10 Heraklion, Crete, Greece | |
| A-III.6 | 15:00-15:15 | fs-PULSE LASER PROCESSING OF TiN ON Si, J. Bonse, P. Rudolph, J. Krüger, and W. Kautek, Laboratory for Thin Film Technology, Federal Institute for Materials Research and Testing, Unter den Eichen 87, 12205 Berlin, Germany | |
| A-III.7 | 15:15-15:30 | CHEMICAL MIGRATION DURING UV IRRADIATION FOR BRAGG GRATINGS IN DOPED SiO2 FIBERS, F. Kherbouche and B. Poumellec, Laboratoire Physico-Chimie de l’état solide - CNRS, Bât. 414, Université de Paris Sud, 91405 Orsay Cedex. M. Fialin , Laboratoire LPMM, URA 736 CNRS, Centre de microanalyse, Université Pierre et Marie Curie, T26, ét 3, 4, place Jussieu, 75252 Paris cedex 05. F. Charpentier, Laboratoire de métallurgie structurale, Bât. 415, Université de Paris Sud, 91405 Orsay Cedex. M. Douay, Lab. LDMP, URA 779 CNRS, Dynamique Moléculaire et Photonique, Université de Lille, 59655 Villeneuve d'Ascq. M. Zervas, Optoelectronics Research Center, University of Southampton, Southampton S017 1BJ, UK. | |
| 15:30-16:00 | BREAK |
| A-IV.1 | 16:00-16:30 | -Invited- | RECENT PROGRESS IN THIN FILM GROWTH ANALYSIS BY MULTICHANNEL SPECTROSCOPIC ELLIPSOMETRY, R.W. Collins, J. Koh, A.S. Ferlauto, P.I. Rovira, J.A. Zapien, C.R. Wronski nd R. Messier, The Pennsylvania State Uni., Center for Thin Film Devices, University Park, PA 16802, USA |
| A-IV.2 | 16:30-17:00 | -Invited- | IN SITU MONITORING OF SEMICONDUCTOR THIN FILMS AND INTERFACES, R. Brenot, B. Drévillon, P. Roca i Cabarrocas and R. Vanderhaghen, LPICM (UPR 258 du CNRS), Ecole Polytechnique, 91128 Palaiseau, France |
| A-IV.3 | 17:00-17:15 | TIME RESOLVED PLASMA EMISSION SPECTRUM ANALYSES AT THE EARLY STAGE OF LASER ABLATION, M.H. Hong, Y.F. Lu, and S.K. Bong, Laser Microprocessing Laboratory, Department of Electrical Engineering and Data Storage Institute, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 | |
| A-IV.4 | 17:15-17:30 | FEMTOSECOND LASER ABLATION DYNAMICS OF AMORPHOUS FILM OF A Cu-PHTHALOCYANINE DERIVATIVE STUDIED BY FEMTOSECOND ABSORPTION SPECTROSCOPIC AND SCATTERING IMAGING MEASUREMENTS, T. Asahi, Y. Hosokawa, M. Yashiro, H. Fukumura, and H. Masuhara, Department of Applied Physics, Osaka University, Suita, Osaka, 565-0871, Japan | |
| A-IV.5 | 17:30-17:45 | SUBSURFACE GROWTH OF METALLIC MULTILAYERS PREPARED BY PULSED LASER DEPOSITION, M. Weisheit, S. Fähler* and H.U. Krebs, Institut für Materail physik Universität Göttingen, Hospitalstrasse 3-7, 37073 Göttingen and SFB 345 Germany, *current address : IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany | |
| A-IV.6 | 17:45-18:00 | ON THE DELAY TIME IN PHOTOLUMINESCENCE OF Si-NANOCLUSTERS, PRODUCED BY LASER ABLATION, B.S. Luk’yanchuk and W. Marine*, General Physics Institute, Russian Academy of Sciences, 117942 Moscow, Russia, *UMR CNRS 6631, Faculté des Sciences de Luminy, 13288 Marseille, France | |
| A-IV.7 | 18:00-18:15 | RAMAN SPECTROSCOPIC AND ATOMIC FORCE MICROSCOPIC STUDY OF GRAPHITE ABLATION AT 193 AND 248 NM, A. Mechler, Zs. Marton, M. Kovacs, Z. Bor, Dept. of Optics and Quantum Electronics, JATE University, P.O. Box 406, 6701 Szeged, Hungary and P. Heszler, T. Szörenyi, Research Group of Laser Physics of the Hungarian Academy of Sciences, P.O. Box 406, 6701 Szeged, Hungary | |
| A-IV.8 | 18:15-18:30 | TEM INVESTIGATION OF NANOCRYSTALLINE IRIDIUM OXIDE THIN FILMS GROWN BY REACTIVE PULSED LASER DEPOSITION, A.M Serventi, M.A. El Khakani*, R.G. Saint-Jacques*, D.G. Rickerby, European Commission Joint Research Centre, IHCP, 21020 Ispra (VA), Italy, *INRS-Energie et Matériaux, C.P. 1020, Varennes, Qc, J3X 1S2, Canada |
Wednesday, June 2, 1999 - Afternoon
Mercredi 2 juin 1999, Après-midi
14:00-15:30
| A-V/P1 | ENCLOSED SURFACE LASER ABLATION OF ALUMINIUM, R. Stewart, L. Li, Manufacturing Division, Department of Mechanical Engineering, University Manchester, Institut of Science and Technology (UMIST), PO Box 88, Manchester M60 1QD, UK and D. Thomas, De La Rue International Limited, Overton Mill, Hants, RG25 3JG, UK |
| A-V/P2 | ABLATION OF A CHLORINATED RUBBER POLYMER AND TiO2MIXTURE UTILISING A Nd: YAG LASER, M.J.J. Schmidt, L. Li, , Manufacturing Division, Department of Mechanical Engineering, University Manchester, Institute of Science and Technology (UMIST), PO Box 88, Manchester M60 1QD, UK; J.T. Spencer, Research & Technology, B709, BNFL, Springfields Works, Salwick, Preston, PR4 0XJ, UK |
| A-V/P3 | THE INFLUENCE OF SUBSTRATE TEMPERAURE ON LASER ABLATION OF POLYIMIDE IN OXYGEN CONTAINING ENVIRONMENTS, A. Braun, K. Zimmer, F. Bigl, Institute of Surface Modification, Permoserstrasse 15, 04318 Leipzig, Germany |
| A-V/P4 | ADVANTAGES OF INTERNAL CALIBRATION BY CONTINUUM EMISSION SIGNAL FOR MICROANALYSIS BY LA-OES, V. Detalle, P. Fichet, J.L. Lacour, A. Semerok, J.F. Wagner, CEA Saclay, DPE/SPCP/LSLA, 91191 Gif sur Yvette Cedex, France |
| A-V/P5 | LASER INDUCED ION EMISSION FROM DIELECTRICS, M. Henyk, R. Mitzner, .Wolframm, J. Reif, LS Experimentalphysik II, BTU Cottbus, Universitätsplatz 3-4, 03044 Cottbus, Germany |
| A-V/P6 | EXCIMER LASER ABLATION STUDIES OF TITANIUM, P.Clarke, P.H.Key and P.E.Dyer, Department of Physics, University of Hull, HU6 7RX, UK. |
| A-V/P7 | COMPOSITION AND PHASE STRUCTURE VARIATIONS IN LASER ABLATED Nd-MODIFIED Pb(ZrxTi1-x)O3 THIN FILMS, J. Lappalainen and V. Lantto, Microelectronics and Materials Physics Laboratories, University of Oulu, P.O. Box 4500, FIN-90401 Oulu, Finland |
| A-V/P8 | POSSIBLE THEORETICAL APPROACHES TO INVESTIGATION OF FEMTOSECOND LASER ABLATION OF DIELECTRICS, A.S.Gruzdeva, V.E.Gruzdev, State Research Centre "S.I.Vavilov State Optical Institute", Birzhevaya Liniya 12, St.Petersburg, 199034, Russia |
| A-V/P9 | MATHEMATICAL MODELING OF PULSED LASER ABLATED FLOWS, T.E. Itina, W. Marine, and M. Autric, Laboratoire Interdisciplinaire Ablation Laser et Applications, 163 avenue de Luminy, 13009 Marseille, France |
| A-V/P10 | CEO2 THIN FILMS DEPOSITD BY RF.-SPUTTERING AND BY LASER ABLATION: OPTICAL AND ELECTOCHEMICAL PROPERTIES, C. Flamini, F. Varsano, F. Decker, Universita la Sapienza, P.Le A. Moro 5, 00185 Roma, Italy; E. Masetti, ENEA-Thin Film Optics division, Via Anguillarese 301, 00060 Roma, Italy; F. Cardellini, ENEA, Via Anguillarese 301, 00060 Roma, Italy; V. Marotta, IMS, CNR, Tito Scalo (Pz), Italy |
| A-V/P11 | TiC AND TaC DEPOSITION BY PULSED LASER ABLATION : A COMPARATIVE APPROACH, R. Teghil, L. D’Alessio, I. Zaccardo, A. Zaccagnino, Universita degli Studi della Basilicata, Dipartimento di Chimica, Potenza, Italy ; D. Ferro, Centro per la Termodinamica Chimica alle Alte Temperature, CNR, Roma, Italy ; V. Marotta, IMS, CNR, Tito Scalo, Potenza, Italy |
| A-V/P12 | FABRICATION AND CHARACTERIZATION OF SUPERCONDUCTING MULTIPLEXERS USING YBCO THIN FILMS GROWN BY PULSED LASER DEPOSITION, Cheol-Su Kim, Sung-Min Kim, Seok-Cheon Song and Sang Yeol Lee, Department of Electrical Engineering, Yonsei Univ., 134 Shinchondong, Seodaemunku, Seoul 120-749, Korea |
| A-V/P13 | CHARACTERIZATION OF DIAMOND-LIKE CARBON FILMS BY PULSED LASER IRRADIATION PROCESS, D. Vouagner, Cs. Beleznai* and J.P. Girardeau-Montaut, Laboratoire de Sciences et Ingenierie des Surfaces (EA 1877), Université Claude Bernard-Lyon 1, 43 Bd du 11 Novembre 1918, 69622 Villeurbanne Cedex, France *also at the Department of Experimental Physics, Jozsef Attila University, Dom t. 9, 6720 Szged, Hungary |
| A-V/P14 | PULSED LASER DEPOSITION OF ZnO THIN FILMS USING A FEMTOSECOND LASER, M. Okoshi, K. Higashikawa and M. Hanabusa, Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Tenpaku, Toyohashi 441-8580, Japan |
| A-V/P15 | PULSED LASER DEPOSITION OF a-CNx:H FILMS: THE ROLE OF TARGET TO SUBSTRATE DISTANCE AND LASER FLUENCE, P. Gonzalez, R. Soto, B. Leon, M. Perez-Amor, Dpto. Fisica Aplicada, Univ. de Vigo, Lagoas-Marcosende 9, 36200 Vigo, Spain and T. Szorenyi, Research Group on Laser Physics, PO Box 406, 6701 Szeged, Hungary |
| A-V/P16 | PULSED LASER DEPOSITION OF ZnO THIN FILMS FOR THE APPLICATIONS OF LIGHT EMISSION, Youn Hong Min, Sang-hyuck Bae, Sang Yeol Lee, Department of Electrical Engineering, Yonsei Univ., 134 Shinchondong, Seodaemunku, Seoul, 120-749, Korea and B. J. Jin and S. Im, Department of Metallurgical Engineering, Yonsei Univ., 134 Shinchondong, Seodaemunku, Seoul, 120-749, Korea |
| A-V/P17 | FABRICATION AND CHARACTERIZATION OF DIAMOND-LIKE CARBON THIN FILMS BY PULSED LASER DEPOSITION, Kyung-suk Shim, Sang-hyuck Bae, Sung-Min Kim and Sang Yeol Lee, Department of Electrical Engineering, Yonsei Univ., 134 Shinchondong, Seodaemunku, Seoul, 120-749, Korea and Hae-suk Jung, Hyung-ho Park, Department of Ceramic Engineering, Yonsei Univ., 134 Shinchondong, Seodaemunku, Seoul, 120-749, Korea |
| A-V/P18 | ELEMENTAL ANALYSIS OF PLD Hg1-x Cd x Te LAYERS ON SILICON PATTERNED SUBSTRATES, M. Kuzma, G. Wisz, Institute of Physics, Higher Pedagogical School, Rejtana 16a, 35-309 Rzeszow, Poland; T.Ya.Gorbach, P.S. Smertenko, S.V. Svechnikov, Institute of Semiconductors Physics NASU, prospekt Nauki, 45, 252028 Kyiv, Ukraine, R. Ciach, Institute of Metallurgy and Material Science, Polish Academy of Sciences, Reymonta 25, 30-059 Cracow, Poland; A. Rakowska, University of Mining and Metallurgy, Al.Mickiewicza 30, 30-059 Cracow, Poland |
| A-V/P19 | SENSORS BASED ON PULSED LASER DEPOSITION OF MULTIYARS OF METAL OXIDES, V. Marotta, S. Orlando, G. P. Parisi, and A. Giardini, CNR - Istituto per i Materiali Speciali, Zona Industriale 85050 Tito Scalo (PZ), Italy |
| A-V/P20 | PULSED LASER DEPOSITION OF METALS IN AN AMBIENT INERT GAS, K. Sturm, S. Fähler and H.-U. Krebs, Institut für Materialphysik, Universität Göttingen, Hospitalstr. 3-7, 37073 Göttingen, and SFB345, Germany |
| A-V/P21 | Ta2O5 THIN FILMS DEPOSITION BY LASER ABLATION OF A Ta TARGET IN OXYGEN REACTIVE ATMOSPHERE, P. Verardi, M. Dinescu*, F. Craciun, L. Mirenghi**, R. Dinu* IDAC-CNR, Rome, Italy; *IFA, NILPRP, Bucharest, Romania, **PASTIS-CNRSM, Brindisi, Italy |
| A-V/P22 | EPITAXIAL SrRuO3 THIN FILMS ON LaAlO3(100) AND Si(100), J. Roldan, C. Guerrero, V. Trtuk, C. Ferrater, F. Benitez, F. Sanchez, and M. Varela, Universitat de Barcelona, Departament de Fisica Aplicada i Optica, Avda. Diagonal 647, Barcelona E-08028, Spain |
| A-V/P23 | PROPERTIES OF ION-ASSISTED PULSED LASER DEPOSITED h-BN/c-BN LAYER SYSTEMS, S. Weissmantel and G. Reisse, Hochschule Mittweida, University of Applied Sciences, Technikumplatz 17, 09648 Mittweida, Germany |
| A-V/P24 | PREPARATION OF SINGLE CRYSTALLINE REGIONS WITHIN AMORPHOUS SILICON LAYERS ON GLASS BY AR+ LASER IRRADIATION, G. Andr?, J. Bergmann, F. Falk, E. Ose, Institut für Physikalische Hochtechnologie, Helmholtzweg 4, 07743 Jena, Germany |
| A-V/P25 | CRYSTALLIZATION TEMPERATURE OF LASER – MELTED SILICON SURFACE LAYER, G.D. Ivlev and E.I. Gatskevich, Institute of Electronics of the Belarus National Academy of Sciences, 22 Logoiskii Trakt, 2200090 Minsk, Belarus |
| A-V/P26 | COMPUTER-SIMULATION OF PULSED LASER-INDUCED PHASE TRANSITION IN THE NEAR-SURFACE REGION OF MONOCRYSTALLINE Si AND Ge, S.P. Zhvavyi and O.L. Sadovskaya, Institute of Electronics of the Belarus National Academy of Sciences, 22 Logoiskii Trakt, 22090 Minsk, Belarus |
| A-V/P27 | TEM STUDY OF EXCIMER LASER INDUCED CRYSTALLOF AMORPHOUS SILICON LAYERS K. Mirouh,A. Bouabellou, Unité de Recherche de Physique, Université Mentouri de Constantine, 25000, Algérie and A. Mosser, G. Ehret, IPCMS-GSI, 23 rue du Loess, 67037 Strasbourg, France |
| A-V/P28 | LASER-INDUCED PHASE FORMATION IN SILICON/TRANSITION-METAL HETEROSTRUCTURES, S.A.Mulenko , Institute for Metal Physics NAS of Ukraine, 252680 Kiev, Ukraine |
| A-V/P29 | COMPARATIVE STUDY OF FEMTOSECOND LASER PULSE INDUCED STRUCTURAL PHASE TRANSITION ON SURFACE OF GaAs AND Si, E. Seres, S. Szatmari, L. Fabian, Dept. of Experimental Physics, JATE University, Dom Ter 9, 6721 Szeged, Hungary, J. Seres and L. Nanai, Dept. of Physics, JGYTF College, Boldogasszony sgt. 6, 6725 Szeged, Hungary |
| A-V/P30 | WETTABILITY CHARACTERISTICS OF CARBON STEEL MODIFIED WITH CO2, NdYAG, EXCIMER AND HIGH POWER DIODE LASERS, J. Lawrence, L. Li, Manufacturing Division, Department of Mechanical Engineering, University Manchester, Institut of Science and Technology (UMIST), PO Box 88, Manchester M60 1QD, UK |
| A-V/P31 | EFFECTS OF RAPID THERMAL ANNEALING ON RIPPLE GROWTH IN EXCIMER LASER IRRADIATED SILICON- DIOXID/SILICON SUBSTRATES, J.J. Yu and Y.F. Lu Laser Microprocessing Laboratory, Department of Electrical Engineering and Data Storage Institute, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 |
| A-V/P32 | INFLUENCE OF PULSE DURATION ON DRY AND STEAM LASER CLEANING EFFICIENCY OF Si SURFACES, M. Mosbacher, N. Chaoui*, J. Siegel*, V. Dobler, J. Solis*, J. Boneberg, P. Leiderer and C.N. Afonso* ; University of Konstanz, Faculty of Physics, Fach M 676, 78457 Konstanz, Germany ; *Instituto de Optica (CSIC), Serrano 121, 28006 Madrid, Spain |
| A-V/P33 | OPTICAL SURFACE MODIFICTION OF ALUMINA-BASED REFRACTORIES USING A XENON ARC, L. Bradley, L. Li, Manufacturing Division, Department of Mechanical Engineering, University Manchester, Institut of Science and Technology (UMIST), PO Box 88, Manchester M60 1QD, UK |
| A-V/P34 | PULSED CO2 -LASER INDUCED CHANGES OF ELECTRICAL PROPERTIES OF Co-Ti-Si THIN FILMS, M. Knite, Technical Physics Institute, Riga Technical University, 1a Kalku str., Riga 1658, Latvia |
| A-V/P35 | PHOTODESTRUCTION OF TEFLON PTFE AND TEFLON FEP FIMS BY VACUUM UV RADIATION, V.E. Skurat and P.V. Samsonov, Institute of Energy Problems of Chemical Physics, Russian Academy of Sciences, 38 Leninskij prospect, Moscow 117829, Russia |
| A-V/P36 | COMBINATION OF DIFFERENT PROCESSING METHODS FOR THE FABRICATION OF 3D-POLYMER STRUCTURES BY EXIMER LASER MACHINING, K. Zimmer, A. Braun, F. Bigl, Institute of Surface Modification, Permoserstrasse 15, 04318 Leipzig, Germany |
| A-V/P37 | FORMATION INSTABILITY OF METAL CLUSTERS ON THE SURFACE OF CdxZn1-xS THIN FILMS UNDER UV-LASER IRRADIATION, V.G. Klyuev, A.N. Latyshev,V.N. Semenov, Yu.V. Meteleva, A.I. Kustov, Voronezh State University,Universitetskaya pl.1, 394693 Voronezh, Russia |
| A-V/P38 | LASER INDUCED CHANGES IN COMPOSITE POLYIMIDE-PHTHALOCYANINE LAYERS, J. Ihlemann, Laser Laboratorium e.V., 37077 Goettingen, Germany, I. Jivkov, J. Assa, E. Spassova, G. Danev, CLF-BAS, 1113 Sofia, Bulgaria |
| A-V/P39 | CERAMIC SURFACE MODIFICATIONS INDUCED BY PULSED LASER TREATMENT, E. Cappelli, CNR-IMAI, P.O.B. 10, 00016 Monterotondo Scalo, Roma, Italy, S. Orlando, CNR-IMS, P.O.Box 27, 85050 Tito Scalo, Potenza, Italy, M. Montozzi, CNR-IMAI, P.O.B. 10, 00016 Monterotondo Scalo, Roma, Italy, A. Bellosi, CNR-IRTEC, via Granarolo 64, 48018, Faenza, Italy |
| A-V/P40 | LASER POLISHING OF SINGLE CRYSTALLINE DIAMOND SURFACES, B. Keiper, R. Ebert, H. Exner, L. Hirte, U. Löschner, Laserinstitut Mittelsachsen e.V., Hochschule Mittweida, University of Applied Sciences, Technikumplatz 17, 09648 Mittweida, Germany |
| A-V/P41 | OPTICAL BREAKDOWN OF METAL VAPOUR INDUCED BY UV LASER RADIATION, V.I. Mazhukin, V.V. Nosov, M.G. Nickiforov, Institute of Mathematical Modelling RAS, Miusskaya 4a, 125047 Moscow, Russia; I. Smurov, Ecole Nationale d’Ingénieurs de Saint-Etienne, 58 rue Jean Parot, 42023 Saint-Etienne Cedex 2, France |
| A-V/P42 | LOW TEMPERATURE DIAMOND CVD UNDER UV-IRRADIATION, S. Laufer, J. Stiegler, E. Blank, EPFL, Lausanne, Switzerland |
| A-V/P43 | LASER-ASSISTED DEPOSITION OF GAS MOLECULES ON AEROSOL PARTICLES, V.V. Levdansky, Heat and Mass Transfer Institute NAS RB, 15 P. Brovka St., 220072 Minsk, Belarus, P. Moravec, J. Smolik and V. Zdimal, Institute of Chemical Process Fundamentals AS CR, Rozvojova 135, 165 02 Prague 6, Czech Republic |
| A-V/P44 | ON THE REACTION MECHANISM IN LASER-INDUCED DEPOSITION OF TUNGSTEN MICROSTRUCTURES FROM WF6/H2, K. Piglmayer, H. Schieche, R. Chabicovsky*, Johannes-Kepler-Universität Linz, 4040 Linz, Austria ; *Institut für Allgemeine Elektronik und Quantenelektronik, TU Wien, 1040 Wien, Austria |
| A-V/P45 | LIGHT INDUCED CHEMICAL VAPOUR DEPOSITION (LICVD) OF TITANIUM OXIDE THIN FILMS, E. Halary, G. Benvenuti and P. Hoffmann, Institute of Applied Optics, EPFL, Lausanne, Switzerland |
| A-V/P46 | PROCESSING AND STRUCTURE OF CARBON NITRIDE NANOPARTICLES AND THIN FILMS PREPARED BY LASER- ASSISTED GAS PHASE PROCESSES, R. Alexandrescu, A. Crunteanu, R. Cireasa, S. Cojocaru, I. Morjan, National Institute for Lasers, Plasma and Radiation Physics, P.O.Box MG-36, 76900 Bucharest, Romania and F. Vasiliu, National Institute for Material Physics, P.O.Box MG-7, Bucharest, Romania |
| A-V/P47 | EXCIMER LASER–INDUCED COPPER NANOCLUSTER FORMATION IN PMMA-FILMS, F. Hanus, K. Kolev, A. Jadin and L.D. Laude, Laboratoire de Physique de l’Etat Solide, Université de Mons-Hainaut, Av. Maistriau 23, Mons 7000, Belgium |
| A-V/P48 | PHOTO-INDUCED FORMATION AND DESTRUCTION OF CLUSTERS ADSORBED ANIONIC-COVALENT CRYSTAL SURFACE, A.N. Latyshev, V.G. Klyuev, A.I. Kustov,L.Yu. Leonova, A.G. Nevezhina, O.V. Ovchinnikov, T.V. Voloshina, Voronezh State University, Universitetskaya pl.1, 394693 Voronezh, Russia |
| A-V/P49 | LASER-INDUCED NANO-ETCHING OF TUNGSTEN LAYERS, H. Schieche, K. Piglmayer, R. Chabicovsky*, Angewandte Physik, Johannes-Kepler-Universitaet Linz, 4040 Linz, Austria, *Institut für Allgemeine Elektronik und Quantenelektronik, TU Wien, 1040 Wien, Austria |
| A-V/P50 | TRANSMISSION ELECTRON MICROSCOPY AND X-RAY DIFFRACTION INVESTIGATION OF MoS2 NANOPARTICLES PRODUCED BY LASER INDUCED PYROLYSIS FROM THE GAS PHASE, by J.P. Urban,S.Botti and S. Martelli. |
| A-V/P51 | EFFECTS OF ASSIST GAS ON THE SPATTER/RECAST LAYER DURING LASER DRILLING, D.K.Y. Low, L. Li, Manufacturing Division, Department of Mechanical Engineering, University Manchester, Institut of Science and Technology (UMIST), PO Box 88, Manchester M60 1QD, UK; A.G. Corfe, Aerospace Group, Rolls-Royce plc., PO Box 3, Filton, Bristol BS34 7QE, UK |
| A-V/P52 | OPTICAL AND PROBE DIAGNOSTICS OF SIC PLASMA PLUME FOR THIN FILMS DEPOSITION Igor A. Movtchan, Physics Institute, St.-Petersburg University, 1 Ulyanovskaya str., 198904, St.-Petersburg, Russia, Igor Yu. Smurov, ENISE, 58 rue Jean Parot, 42023 St.-Etienne, France, J. Flamant IMP/CNRS, BP5, 66125 Font-Romeu, France and J. Santiso ICMAB-CSIC, Campus de la UAB, 08193 Barcelona, Spain |
| A-V/P53 | IN SITU DETECTION OF F2 LASER-INDUCED OXIDATION OF HYDROGENATED SILICON(111) BY FTIR TRANSMISSION SPECTROSCOPY, J. Lambers and P. Hess, Institute of Physical Chemistry, University of Heidelberg, Im Neuenheimer Feld 253, 69120 Heidelberg, Germany |
| A-V/P54 | CLUE TO SURFACE REACTION MECHANISM IN MOVPE GROWTH OF ZnSe DISCOVERED BY USING IN SITU LASER-ASSISTED RADICAL ETCHING, Keiji Hayashi, Yoshiyasu Kitagawa, and Masataka Fujiyama, Advanced Materials Science R&D Center, Kanazawa Inst. of Technol., 3 – 1, Yatsukaho, Matto, Ishikawa 924 - 0838, Japan |
| A-V/P55 | OPTICAL SPECTROSCOPY OF SCINTILLATION RESPONSE OF PBWO4 MONOCRYSTALS WITH SOME ADMIXTURES TO PHOTO EXCITATION BY GAMMA-RAYS, V.K. Egorov, A.P. Zuev, Lab. Nuclear Phys., IPMT RAS, Chernogolovka, Moscow Dis., Russia; E.V. Egorov, Department of Metal Phys., Moscow Engineering Physics Inst., Moscow, Russia |
| A-V/P56 | LASER EXCITED CHARGE TRANSER PROCESSES IN OXYGEN ORGANIC MOLECULES MIXTURES: O(3Pj) FORMATION, A. Giardini Guidoni, A. Paladini, Chem. Dept., Universita la Sapienza, P.Le A. Moro 5, 00185 Roma, Italy; M. Veneziani, R. Nahaman, Weizman Inst. Rehovot, Israel |
| A-V/P57 | PECULARITIES OF PHOTOINDUCED OPTICAL ANISOTROPY IN SOLID POLYMER FILMS CONTAINNG OF AZO-DYES, V.N. Ermakov, Bogolyubov Institute for Theoretical Physics, NASU, 252143 Kiev, Ukraine |
| A-V/P58 | POLARIZING CURRENTS CAUSED BY MAGNETIC COMPONENT OF ELECTROMAGNETIC WAVE AS THE POSSIBLE MECHANISM OF PRIMARY EFFECT ON ALIVE ORGANISMS, V.V. Musakhanyan and A.S. Hovhannesyan, Department of Medical, Biological Physics and Informatics, Yerevan State Medical University, 2 Koryvn Str., Yerevan- 25, 375025 Armenia |
| A-V/P59 | MODELLING OF BREAKDOWN PLASMA IN LASER SHOCK PROCESSING, V.I. Mazhukin, V.V. Nosov, IMM-RAS, Miusskaya 4a, 125047 Moscow, Russia; I. Smurov, ENISE, 58 rue Jean Parot, 42023 Saint-Etienne, France; R. Fabbro, L. Berthe, P. Peyre, A. Sollier, CLFA, 16bis Avenue Prieur de la Côte d’Or, 94114 Arcueil Cedex, France |
| A-V/P60 | UNCERTAINTIES ON THE VALUES OBTAINED BYSURFACE PLASMONS RESONANCE, B. Tilkens, Y. Renotte and Y. Lion, HOLOLAB, Institut de Physique, B5, Université de Liège, 4000 Liège, Belgium |
| A-V/P61 | OPTICALLY INDUCED DEFECTS IN VITREOUS SILICA, S.Juodkazis, H.-B.Sun, M.Watanabe, S.Matsuo, H.Misawa, S-VBL & Graduate School of Engineering, Tokushima University, 2-1 Minamijosanjima, 770-8506 Tokushima, Japan |
| A-V/P62 | Temperature and electromagnetic influence on formation of the valence and coordination of copper ions IN THE SEMICONDUCTOR PHOSPHATE GLASSES, Y.A. Raevcky, D.V. Romanova, State University "Lvivska Polytechnika", 13 Bandera st., Lviv, Ukraine |
| A-V/P63 | LASER ACTION IN OSTEOGENESIS PROCESSES, I.G.F. Freitas and V. Baranauskas, FEEC, Av. A. Einstein N.400, 13083-970 UNICAMP, Campinas-SP, Brazil and M.A. Cruz-H?fling, Departamento de Histologia e Embriologia, Intituto de Biologia UNICAMP, Campinas, SP, Brazil. |
| A-V/P64 | STUDY OF THE SPECTRAL RESPONSE AND CALCULATION OF THE PHOTOCU IN Ga1-xAlxAs/GaAs HETEROJUNCTION TYPE, A. Joti, Université de Sidi bel Abbes, Institut d’Electronique, 45 rue du 24 février, 1956, Sidi bel Abbes 22000, Algérie |
| A-V/P65 | MATERIALS WITH CONTROLLED SURFACE PROPERTIES, V.V.Andreev, Chuvash State University, Moskovskii pr.15, 428015 Cheboksary, Russia |
| A-V/P66 | ULTRASHORT LASER PULSE ABLATION OF POLYMERS USED IN BIOMEDICAL TECHNOLOGY, S. Baudach, J. Krüger, and W. Kautek, Laboratory for Thin Film Technology, Federal Institute for Materials Research and Testing, Unter den Eichen 87, 12205 Berlin, Germany |
| 15:30-16:15 | BREAK |
| A-VI.1 | 16:15-16:30 | SURFACE MODIFICATIONS IN FUSED SILICA INDUCED BY A PICOSECOND, TUNABLE, MID-INFRARED LASER, R. F.Haglund, Jr., M. R. Papantonakis, H. K. Park and O. Yavas, Vanderbilt University, Nashville TN 37235 U.S.A. ; D. Bäuerle and N. Arnold, Johannes-Kepler Universität, 4040 Linz, Austria | |
| A-VI.2 | 16:30-17:00 | -Invited- | LOW-TEMPERATURE PREPARATION OF SrxBi2+yTa2O9 FERROELECTRIC THIN FILM BY PULSED LASER DEPOSITION AND ITS APPLICATION TO METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR STRUCTURE, Masanori Okuyama, Hideki Sugiyama and Minoru Noda, Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan |
| A-VI.3 | 17:00-17:15 | PULSED LASER DEPOSITION OF GaN, GaP/Alq3 LUMINESCENT THIN FILMS, H.S. Kwok, L.D. Wang, X. Liu and X.W. Sun, Department of Electrical Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China | |
| A-VI.4 | 17:15-17:30 | XeCl LASER ABLATION OF Al2O3 – TiC CERAMICS, M. Mendes, V. Oliveira, R. Vilar, Dept Eng. Materiais, I.S.T., Av. Rovisco Pais, 1096 Lisboa, Portugal; F. Beinhorn, J. Ihlemann, L.L.G. e.V., Hans-Adolf-Krebs-Weg 1, 3077 Gottingen, Germany and O. Conde, Dept. de Fisica, F.C.U.L., Campo Grande Ed. C1, 1700 Lisboa, Portugal | |
| A-VI.5 | 17:30-17:45 | PULSED LASER DEPOSITION OF STRONTUM FERRITE THIN FILMS, L. Canale, C. Girault, A. Bessaudou, F. Cosset, A. Célérier, J.L. Decossa, J.C. Vareille, Laboratoire IRCOM (UMR 6615), Equipe Capteurs Microélectroniques et Microoptiques, 123 Avenue Albert Thomas, 87060 Limoges Cedex, France | |
| A-VI.6 | 17:45-18:00 | CARBON NITRIDE FILMS DEPOSITED BY LASER REACTIVE ABLATION AT HIGH FLUENCE, S. Acquaviva, M.L. De Giorgi, M. Fernandez, G. Leggieri, A. Luches, A. Perrone and A. Zocco, INFM and Universita` di Lecce, Dipartimento di Fisica, 73100 Lecce, Italy | |
| A-VI.7 | 18:00-18:15 | DEPOSITION OF DIAMOND-LIKE CARBON FILMS BY FEMTOSECOND LASER ABLATION USING FROZEN ACETONE TARGETS, M. Okoshi, S. Higuchi and M. Hanabusa, Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Tenpaku, Toyohashi 441-8580, Japan | |
| A-VI.8 | 18:15-18:30 | HIGH PRESSURE PULSED KrF LASER ABLATION OF A THIN FILM ELECTROLUMINESCENT BASE LAYER (ZnS:Mn/Y2O3), E.A. Mastio, W.M. Cranton, C.B. Thomas, The Nottingham Trent University, Department of Electrical and Electronic Engineering, Burton Street, Nottingham NG1 4BU, England and E. Fogarassy, Laboratoire PHASE (UPR du CNRS no. 292), BP 20, 67037 Strasbourg Cedex 2, France. |
Thursday, June 3, 1999 - Morning
Jeudi 3 Juin 1999, Matin
| A-VII.1 | 08:30-09:00 | -Invited- | ULTRAFAST LASER ABLATION, DISCHARGE PLASMAS AND NITRIDE THIN FILM DEPOSITION, P.P. Pronko, P.A. VanRompay, Z. Zhang, J. Nees, C. Stewart, and G. Mourou, Center for Ultrafast Optical Science and Dept. of Electrical Engineering and Computer Science, University of Michigan; Ann Arbor, MI 48109-2099, USA |
| A-VII.2 | 09:00-09:15 | INFLUENCE OF THE DEPOSITION PARAMETERS ON THE SYNTHESIS OF NANOCOMPOSITE MATERIALS BY PULSED LASER DEPOSITION, J. Gonzalo, R. Serna, J.M. Requejo, J. Solis, C.N. Afonso, Instituto de Optica (CSIC), Serrano 121, 28006 Madrid, Spain ; A. Naudon, LMP, UMR 6630 du CNRS, UFR Sciences, Bat. S2MI, Bd. 3 Téléport2, France | |
| A-VII.3 | 09:15-09:30 | LASER-ABLATION OF METAL NANOPARTICLES: A NOVEL TECHNIQUE FOR FABRICATION OF MONODISPERSE CLUSTERS ON SURFACES, F. Stietz, J. Bosbach, D. Martin, T. Wenzel, F. Träger, Fachbereich Physik, Universität Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany | |
| A-VII.4 | 09:30-09:45 | PRE-BONDING TECHNOLOGY BASED ON EXCIMER LASER SURFACE TREATMENT, M. Rotel, S. Tamir, Israel Institute of Metal, Haifa, Israel and A. Buchman, H. Doduik, RAFAEL, P.O. Box 2250, Haifa 31021, Israel. | |
| A-VII.5 | 09:45-10:00 | PRODUCTION OF IRON-OXIDE NANOPARTICLES BY LASER INDUCED PYROLISIS OF GASEOUS PRECURSORS, S. Martelli, A. Mancini, ENEA-C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Rome) Italy, R. Giorgi, ENEA-C.R. Casaccia, Via Anguillarese 301, 00060 Rome, Italy, R. Alexandrescu, S. Cojocaru, A. Crunteanu, I. Voicu, M. Balu, I. Morjan, National Institute for Lasers, Plasma and Radiation Physics, P.O.Box MG-36, 76900, Bucharest, Romania | |
| 10:00-10:30 | BREAK |
| A-VIII.1 | 10:30-11:00 | -Invited- | ROUGHENING AND SELF-ORGANIZATION IN HETEROEPITAXIAL GROWTH, J. Tersoff, IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598 USA. |
| A-VIII.2 | 11:00-11:30 | -Invited- | IN-SITU REAL-TIME MONITORING OF SiGe CHEMICAL VAPOR DEPOSITION BY SPECTROSCOPIC ELLIPS-OMETRY AND SECOND HARMONIC GENERATION, M.C. Downer, L. Mantese, Y. Jiang, D. Lim, J. G. Ekerdt, S. K. Banerjee, Texas Materials Institute, University of Texas at Austin, Austin, TX 78712, USA |
| A-VIII.3 | 11:30-11:45 | TANTALUM PENTOXIDE FILMS DEPOSITED BY PHOTO-INDUCED CVD USING AN EXCIMER LAMP, Jun-Ying Zhang and I. W Boyd, Electronic & Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK | |
| A-VIII.4 | 11:45-12:15 | -Invited- | PULSED LASER DEPOSITION AND SURFACE MODIFICATION OF CARBON AND SILICON, D.H. Lowndes, V.I. Merkulov, A.A. Puretzky, D.B. Geohegan, G.E. Jellison Jr., Solid State Division, Oak Ridge National Laboratory, Oak Ridge TN 37831-6056, USA ; J.D. Fowlkes and A.J. Pedraza, Dept of Materials Science and Engineering, U. of Tennessee, Knoxville TN 37996-2200, USA |
| 12:15-13:30 | LUNCH |
Thursday, June 3, 1999 - Afternoon
Jeudi 3 juin 1999, Après-midi
13:30-15:00
| A-IX/P1 | TWO-DIMENSIONAL GAS-DYNAMIC MODEL OF LASER ABLATION IN AN AMBIENT GAS, A.G. Gnedovets and A.V. Gusarov, Baikov Institute of Metallurgy, Russian Academy of Sciences, Leninsky Prospect 49, 117911 Moscow, Russia; I. Smurov, Ecole Nationale d’Ingénieurs de Saint-Etienne, 58 rue Jean Parot, 42023 Saint-Etienne Cedex 2, France |
| A-IX/P2 | TRANSFER OF LASER ABLATION PRODUCTS TO OTHER SURFACE IN AIR, M.N. Libenson, S.L. Vavilov State Opt. Inst., 199034 St. Petersburg, Russia ; A.L. Shakhmin and G.D. Shandybina, St. Petersburg Inst. of Fine Mech. and Optic, 197101 St. Petersburg, Russia |
| A-IX/P3 | LASER ABLATION MACHINING OF METALS AND CERAMIC POLYMER COMPOSITE MATERIAL, A. Slocombe , L. Li, Department of Mechanical Engineering, University of Manchester Institute of Science and Technology (UMIST), PO Box 88, Manchester, M60 1QD, UK. |
| A-IX/P4 | UV LASER INTERACTIONS WITH INORGANIC SINGLE CRYSTALS WITH MOLECULAR ANIONS, J. Thomas Dickinson, C. Bandis, M. Dawes, Y. Kawaguchi and S.C. Langford , Department of Physics, Washington State University, Pullman WA 99164-2814 USA |
| A-IX/P5 | ANALYSIS OF LASER INDUCED PLUME FROM SmBaCuO TARGET, A. Morone, T.M. Di Palma, A. Di Trolio, U. Gambardella and S. Orlando, CNR - Istituto per i Materiali Speciali and Area di Ricerca di Potenza, Zona industriale, 85050 Tito Scalo (PZ), Italy |
| A-IX/P6 | EXCIMER LASER IRRADIATION OF SrRuO3 EPITAXIAL THIN FILMS, F. Benitez, J. Roldan, V. Trtik, C. Guerrero, C. Ferrater, F. Sanchez and M. Varela, Universitat de Barcelona, Departament de Fisica Aplicada i Optica, Avda. Diagonal 647, Barcelona 08028, Spain |
| A-IX/P7 | ON THE INFLUENCE OF SUBSTRATE TEMPERATURE ON EXCIMER LASER ABLATION OF POLYMERS, A. Braun*, K. Zimmer, F. Bigl, Institut für Oberflächenmodifizierung, Permoserstrasse 15, 04318 Leipzig, Germany |
| A-IX/P8 | ABLATION AND DEPOSITION OF TRANSITION METAL OXYDE THIN FILMS BY DIFFERENT PULSE DURATION LASERS, A. Giardini Guidoni, C. Flamini, Universita la Sapienza, P.Le A. Moro 5, 00185 Roma, Italy; D. Ferro, CNR, Cntro per la Termodinamica Chimica alle Alte Temperature, Universita la Sapienza, P.Le A. Moro 5, 00185 Roma, Italy; R. Teghil, M. Ricci, Universita della Basilicata, Via N. Sauro 85, 85100 Potenza, Italy; T. Di palma, IMS, CNR, Tito Scalo (Pz), Italy |
| A-IX/P9 | AMBIENT GAS EFFECTS DURING THE GROWTH OF LITHIUM NIOBATE FILMS BY PULSED LASER DEPOSITION, J.A. Chaos, A. Perea, J. Gonzalo, C.N. Afonso, Instituto de Optica (CSIC), Serrano 121, 28006 Madrid, Spain ; J. Perriere, Groupe de Physique des solides, Universités Paris 7 et 6, Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France |
| A-IX/P10 | SUPERCONDUCTING BANDPASS FILTER USING PARALLEL MICROSTRIP LINE WITH NARROW BANDWIDTH CENTERED AT 14 GHZ, Sang Yeol Lee and Sung-Min Kim, Department of Electrical Engineering, Yonsei Univ., 134 Shinchondong, Seodaemunku, Seoul 120-749, Korea |
| A-IX/P11 | FABRICATION AND CHARACTERIZATION OF DIAMOND-LIKE CARBON THIN FILMS BY PULSED LASER DEPOSITION, Kyung-suk Shim, Sang-hyuck Bae, Sung-Min Kim and Sang Yeol Lee, Department of Electrical Engineering, Yonsei Univ., 134 Shinchondong, Seodaemunku, Seoul 120-749, Korea and Hae-suk Jung, Hyung-ho Park, Department of Ceramic Engineering, Yonsei Univ., 134 Shinchondong, Seodaemunku, Seoul 120-749, Korea |
| A-IX/P12 | RENTOGENOSPECROSCOPIC ANALYSIS OF THIN FILMS OBTAINED BY LASER DEPOSITION, M. Kuzma, G. Wisz, Institute of Physics, Higher Pedagogical School, Rejtana 16a, 35-309 Rzeszow, Poland; V. Kepnik, Scientific Research Company Carat, 202 Stryjska St., Lviv 290031, Ukraine |
| A-IX/P13 | PULSED LASER DEPOSITION OF BARIUM HEXAFERRITE (BaFe12O19) THIN FILMS, M. Koleva, R. Tomov, P. Atanasov, Institute of Electronics, Tzarigradsko shose 72, 1784 Sofia, Bulgaria and C. Martin, C. Ristoscu, V. Nelea, I.N. Mihailescu, Institute of Atomic Physics, Bucharest, Romania |
| A-IX/P14 | ULTRAVIOLET ANNEALING OF THIN FILMS GROWN BY PULSED LASER DEPOSITION, Jun-Ying Zhang and I.W Boyd, Electronic & Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK |
| A-IX/P15 | FABRICATION AND CHARACTERIZATION OF SUPERCONDUCTING MULTIPLEXERS USING YBCO THIN FILMS GROWN BY PULSED LASER DEPOSITION, Cheol-Su Kim, Sung-Min Kim, Seok-Cheon Song and Sang Yeol Lee. Department of Electrical Engineering, Yonsei Univ., 134 Shinchondong, Seodaemunku, Seoul, 120-749, Korea |
| A-IX/P16 | ULTRAFAST DYNAMICS OF RESONANT ENERGY TRANSFER IN MID-INFRARED LASER INTERACTIONS WITH MATERIALS, D.R. Ermer, R.F. Haglund, Jr., G. L?pke, and M. R. Papantonakis, Vanderbilt University, Nashville TN 37235, USA |
| A-IX/P17 | EXCIMER LASER ABLATION-DEPOSITION AND OPTICAL CHARACTERISATION OF SIC FILMS. M.Schlaf, D.Sands and P.H.Key, The University of Hull, Physics Department, Cottingham Road, Hull, HU6 7RX, UK |
| A-IX/P18 | PULSED LASER DEPOSITION OF THIN FILMS PHOSPHOR NITRIDE MATERIALS, B. Kotlyarchuk, D. Popovych, V. Savchuk, Pidstryhach Institute for Applied Problems of Mechanics and Mathematics National Academy of Sciences of Ukraine, 3 b Naukova Street, 290601 Lviv, Ukraine |
| A-IX/P19 | ABSORPTION AND PHOTOLUMINESCENCE STUDY OF CdS ABLATED FILMS GROWN ON QUARTZ AND SILICON SUBSTRATE, G. Perna a, V. Capozzi a, S. Pagliara a and M. Ambricob; a Dipartimento di Fisica dell’Universit? di Bari and Istituto Nazionale di Fisica della Materia, Via Amendola 173, I-70126 Bari – Italy; b C.N.R. Istituto Materiali Speciali, Via S. Loja, I-85050 Tito Scalo (Pz) – Italy |
| A-IX/P20 | ELECTRICAL BEHAVIOUR OF HgCdTe/Si HETEROSTRUCTURES, Tamara Ya. Gorbach, Petro S.Smertenko, Sergei V Svechnikov, Institute of Semiconductor Physics NASU, 45, prospekt Nauki, 252650 Kyiv, Ukraine; Marian Kuzma, Grzegorz Wisz, Institute of Physics, Higher Pedagogical School, Rejtana 16a, 35-309 Rzeszow, Poland; Ryshard Ciach, Institute of Metallurgy and Material Science, Polish Academy of Sciences, Reymonta 25, 30-059 Cracow, Poland. |
| A-IX/P21 | PULSED LASER DEPOSITION AND CHARACTERIZATION OF PZT THIN FILMS, P. Verardi, M. Dinescu*, F. Craciun, IDAC-CNR, Rome, Italy; *IFA, NILPRP, Bucharest, Romania |
| A-IX/P22 | PULSED LASER DEPOSITION OF EPITAXIAL FERROELECTRIC PbZrxTi1-xO3 / SrTiO3 AND PbZrxTi1-xO3 / SrRuO3 BILAYERS, C. Guerrero, C. Ferrater, J. Rold?n, V. Trt?k, F. Benitez, F. Sanchez, and M. Varela, Universitat de Barcelona, Departament de Fisica Aplicada i Optica, Avda. Diagonal 647, Barcelona 08028, Spain |
| A-IX/P23 | LASER DEPOSITION OF DIAMOND-LIKE FILMS FROM LIQUID AROMATIC HYDROCARBONS A.A. Lyalin, A.V. Simakin, and G.A. Shafeev, General Physics Institute, 38, Vavilov str., 117942, Moscow, Russia ; E.N. Loubnin, Institute of Physical Chemistry, 31, Leninsky prospect, 117915, Moscow, Russia |
| A-IX/P24 | IMPURITIES IN LASER IRRADIATED POLYCRYSTALLNE SILICON LAYERS ON GLASS FOR SOLAR CELLS, G. Andr?, J. Bergmann, F. Falk, E. Ose, Institut f?r Physikalische Hochtechnologie, Helmholtzweg 4, 07743 Jena, Germany |
| A-IX/P25 | ANALYSIS OF LASER INDUCED TRANSFORMATIONS WITH PICOSECOND TIME RESOLUTION IN A SINGLE EXPOSURE, J. Siegel, J. Solis, C.N. Afonso, Instituto de Optica (CSIC), Serrano 121, 28006 Madrid, Spain |
| A-IX/P26 | POLARIZATION-DEPENDENT LASER CRYSTALLIZATI- ON OF SE-CONTAINING AMORPHOUS CHALCOGENIDE FILMS, V.Lyubin, M.Klebanov, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel and M. Mitkova, Central Laboratory of Electrochemical Power Sources, Bulgarian Academy of Sciences, Sofia 1113, Bulgaria |
| A-IX/P27 | LASER INDUCED PHASE TRANSITIONS ON InSb AND GaSb SURFACES, M. Cernik, V. Chab, Institute of Physics CAS, Cukrovarnicka 10, 162 53 Prague 6, Czech Republic, R. Cerny, Czech Technical University Thakurova 7, 162 99 Prague, Czech Republic, G. Ivlev, E. Gatskevich, Institute of Electronics BAS, 22 Logoiskii Trakt, 220090 Minsk, Belarus |
| A-IX/P28 | ENLARGEMENT OF LOCATION CONTROLLED Si GRAIN BY DUAL-BEAM EXCIMER-LASER WITH BUMP STRUCTURE, A. Burtsev and R. Ishihara, DIMES-ECTM, Delft University of Techonology, Feldmannweg 17, POBox 5053, 2600 GB Delft, The Netherlands |
| A-IX/P29 | MELT INSTABILITY AND CRYSTALLIZATION IN THIN AMORPHOUS Ni-P FILMS, O. Bostanjoglo, Z.L. Mao and T. Nink, Optisches Institut, TU Berlin, Strasse des 17. Juni 135, 10623 Berlin, Germany |
| A-IX/P30 | SURFACE TEMPERATURE DYNAMICS IN PULSED LASER ACTION OF MILLISECOND RANGE, Ph. Bertrand, IMP-CNRS, BP5, 66125 Odeillo, France and I. Smurov, Ecole Nationale d’Ingénieurs de Saint-Etienne, 58 rue Jean Parot, 42023 Saint-Etienne Cedex 2, France |
| A-IX/P31 | MANIFESTATION OF THE FEEDBACK BETWEEN ABSORPTION AND TEMPERATURE IN DETAILED STRUCTRE OF SURFACE RELIEF, E.D. Eidelman, St. Petersburg Chemical Pharmaceutical Academy, 196191 St. Petersburg, Russia ; M.N. Libenson, S.I. Vavilov State Opt. Inst., 199034 St. Petersburg, Russia |
| A-IX/P32 | EXCIMER LASER–INDUCED CATALYTIC OF CRYSTALLINE ZIRCONIA FILMS, D. Popov, N. Starbov, V. Mankov, K. Starbova, CLAFOP, Bulgarian Academy of Sciences, Sofia 1040, Bulgaria and K. Kolev, L.D. Laude, Université de Mons-Hainaut, Av. Maistriau 23, Mons 7000, Belgium |
| A-IX/P33 | MODELING OF THE LASER-INDUCED REMOVAL OF THIN OXIDE FILMS ON METALLIC PHOTOCATHODES, Cs. Beleznai*, D. Vouagner and J.P. Girardeau-Montaut, Laboratoire de Sciences et Ing?nierie des Surfaces (EA 1877), Universit? Claude Bernard-Lyon 1, 43 Bd du 11 Novembre 1918, 69622 Villeurbanne Cedex, France *also at the Department of Experimental Physics, Jozsef Attila University, Dom t. 9, 6720 Szged, Hungary |
| A-IX/P34 | CERAMIC SURFACE MODIFICATIONS INDUCED BY PULSED LASER TREATMENT , E. Cappelli, M. Montozzi, CNR-IMAI, P.O.Box 10, 00016 Monterotondo Scalo, Roma, Italy; S. Orlando, CNR-IMS, P.O.Box 27, 85050 Tito Scalo, Potenza, Italy; A. Bellosi, CNR-IRTEC, via Granarolo 64, 48018 Faenza, Italy |
| A-IX/P35 | THE EFFECT OF TARGET TEMPERATURE ON THE DETERIORATION OF METAL SURFACES UNDER PULSED LASER IRRATIATION, Z. Kantor, Zs. Geretovszky, Department of Optics and Quantum Electronics, JATE University, P.O. Box 406, 6701 Szeged, Hungary and T. Szorenyi, Research Group on Laser Physics, PO Box 406, 6701 Szeged, Hungary |
| A-IX/P36 | GMR VS. INTERFACE ROUGHNESS CORRELATION IN EXCIMER LASER IRRADIATED Ag/Co MULTILAYERS, M. Jergel, A. Anopchenko, S. Luby, E. Majkova, Institute of Physics, Slovak Academy of Sciences, 842 28 Bratislava, Slovak Republic, E. D'Anna, A. Luches, M. Martino, Department of Physics and I.N.F.M., University Lecce, 73100 Lecce, Italy. |
| A-IX/P37 | CHARACTERIZATION OF LASER-EXCITATION ETCHING OF PHOTOLUMINESCENT POROUS SILICON, V. Baranauskas, Av. Albert Einstein N.400, 13083-970, UNICAMP, Campinas, SP, Brazil |
| A-IX/P38 | SOME ELECTRODYNAMIC FEATURES OF FEMTOSECOND LASER-PULSE ACTION ON DIELECTRIC SURFACE, A.S.Gruzdeva, V. E.Gruzdev, State Research Centre "S.I.Vavilov State Optical Institute", Birzhevaya Liniya 12, St.Petersburg, 199034, Russia |
| A-IX/P39 | SIMULATION FOR THIN FILM GROWTH VISUALIZATION IN PHOTODEPOSITION, A. Peled, N. Mirchin, Z. Zacharia, and C.R. Peled, Electrical and Electronics Department, Center for Technological Education Holon, 52 Golomb St., Holon 58102, Israel |
| A-IX/P40 | UV LASER PHOTODEPOSITION OF CARBON NITRIDE THIN FILMS FROM GASEOUS PRECURSORS, A. Crunteanu, M. Ch, M. Romand, Laboratoire de Sciences et Ingenierie des Surfaces, Universite Claude Bernard - Lyon 1, 69622 Villeurbanne Cedex, France and R. Alexandrescu, National Institute for Lasers, Plasma and Radiation Physics, P.O.Box MG-36, R-76900, Bucharest, Romania |
| A-IX/P41 | LASER DIRECT WRITING OF COPPER ON POLYIMIDE SURFACES FROM SOLUTION, K. Kordes, K. Bali, Department of Experimental Physics, Jozsef Attila University, 6720 Szeged, Dom ter 9, Hungary, S. Leppovuori, A. Uusim?ki, Microelectronics and Material Physics Laboratories and EMPART research group of Infotech Oulu, University of Oulu, PL 4500, 90570 Oulu, Finland and L. N?nai, Deptartment of Physics, Gyula Juhesz College of Ped., 6720 Szeged, Boldogasszony sgt. 6, Hungary |
| A-IX/P42 | SIMULATION OF NANOSCALE PARTICLESS GENERATION IN LASER-PRODUCED EROSIVE FLOW, A.G. Gnedovets and A.V. Gusarov, Baikov Institute of Metallurgy, Russian Academy of Sciences, Leninsky Prospect 49, 117911 Moscow, Russia; I. Smurov, Ecole Nationale d’Ingénieurs de Saint-Etienne, 58 rue Jean Parot, 42023 Saint-Etienne Cedex 2, France; G. Flamant, IMP-CNRS, BP5 Odeillo, 66125 Font-Romeu Cedex, France |
| A-IX/P43 | MODEL FOR NANOPARTICLES SYNTHESIS BY PULSED LASER VAPORISATION, A.G. Gnedovets and A.V. Gusarov, Baikov Institute of Metallurgy, Russian Academy of Sciences, Leninsky Prospect 49, 117911 Moscow, Russia; I. Smurov, Ecole Nationale d’Ingénieurs de Saint-Etienne, 58 rue Jean Parot, 42023 Saint-Etienne Cedex 2, France |
| A-IX/P44 | GOLD PARTICLES FORMATION BY NUCLEATION UNDER LASER RADIATION, S.S. Fadeeva, A.B. Krynetsky, B.B. Krynetsky, D.N. Kolmykov, CNSC by General Physics Institute RAS, Vavilov str. 8, Moscow 117924 Russia and A. V. Rostchin, APD by RAS, Vavilov str., 42, Moscow 117924 Russia |
| A-IX/P45 | THE SYNTHESIS OF CARBON-BASED NANOPARTICLES BY THE LASER PYROLYSIS OF IRON PENTACARBONYL CONTAINING GAS MIXTURES: AN ATTEMPTED APPROACH TO A FULLERENE-IRON COMPLEX, Stela Petcu, Sorin Cojocaru, Ion Voicu, Rodica Alexandrescu, Aurelian Crunteanu, Ion Morjan, National Institute for Lasers, Plasma and Radiation Physics, P.O.Box MG-36, R-76900, Bucharest, Romania, Lucian Diamandescu, National Institute for Materials Physics, P.O.Box MG-7, Bucharest, Romania, Michel Cauchetier, Xavier Armand, CEA Saclay – DSM-DRECAM Service des Photons, Atomes et Molecules F-91191, Gif-sur-Yvette Cedex, France, Jean-Noel Rouzand, Aymeric Galvez, 1B, rue de la Ferollerie 45071, Orleans Cedex2, France |
| A-IX/P46 | NANO-MODIFICATION ON HYDROGEN-PASSIVATED Si SURFACES BY LASER-ASSISTED SCANNING TUNNELING MICROSCOPE OPERATING IN AIR, Z.H. Mai, Y.F. Lu, W.D. Song and W.K. Chim, Laser Microprocessing Laboratory, Department of Electrical Engineering and Data Storage Institute, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 |
| A-IX/P47 | THE PROCESSING OF ALUMINA CERAMIC USING A LONG PULSE Nd:YAG LASER, V. Iov, D. Buca, A. Marian, F. Costache, National Institute of Laser, Plasma and Radiation Physics, ECS Laboratory, P.O. Box M.G.-36, RO-76900, Bucharest, Romania |
| A-IX/P48 | REAL TIME MONITORING OF GERMANIUM GROWTH ON SILICON(111) BY SPECTROSCOPIC ELLIPSOMETRY, F. Schmitt, I. Opahle and P. Hess, Institute of Physical Chemistry, University of Heidelberg, Im Neuenheimer Feld 253, 69120 Heidelberg, Germany |
| A-IX/P49 | IR-RTI OSZILLATIONS DURING LASER INDUCED EPITAXIAL GaN FILM GROWTH AND THE ROLE OF FREE CARRIER CONCENTRATION, M. Gross, T. Rupp, B. Hüttner and H. Schröder, DLR Stuttgart, Institute of Technical Physics, Pfaffenwaldring 38-40, 70569 Stuttgart, Germany |
| A-IX/P50 | OBSERVATION OF SPECIES DISTRIBUTION IN LASER INDUCED PLASMA, C.W. An, Y.F. Lu, Y.W. Goh and E. Tan Lase Microprocessing Laboratory, Department of Electrical Engineering and Data Storage Institute, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 |
| A-IX/P51 | ADAPTED DESIGN OF SURFACE PLASMONS RESONANCE FOR REAL-TIME MEASUREMENTS ON THE RECORDING MATERIAL: DICHROMATED GELATINE, B. Tilkens, Y. Renotte and Y. Lion, HOLOLAB, Institut de Physique, B5, Université de Liège, 4000 Liège, Belgium |
| A-IX/P52 | INTERFERENCE EFFECT, DEPHASING MECHANISMS IN X-RAY RAMAN SCATTERING BY ORIENTED SYMMETRICAL MOLECULES AND STRUCTURE DETERMINATION OF ADSORBATES, F. Kh. Gel'mukhanov, T.I. Privalov, Institute of Automation and Electrometry SB RAS, Russia, 630090 Novosibirsk, pr. Koptyga 1 ; H. Agren, Institute of Physics and Measurement Technology, Linkoping University, 581 83, Linkoping, Sweden |
| A-IX/P53 | RELIEFOGRAPHICAL CHALCOGENIDES FILMS FOR MICROLITOGRAPHY INCLUDING X-RAY REGION OF SPECTRUM, E. Gritsco, V. Rotaru, O. Corshac, Fototermoplastic Optical Data Recording Lab., State University of Moldova, 60 Mateevici st., 2009 Chisinau, Moldova |
| A-IX/P54 | THE ACTION OF XECL*-LASER RADIATION ON TEMPERATURE DEPENDENCE OF POROUS SILICIUM LUMINESCENCE INTEGRAL INTENCITY, S.N. Baschenko, I.V. Blonskiy, Yu.O. Skrishevskiy, Institute of Physics of NASU, Prospekt Nauki 46, 252028 Kiev, Ukraine |
| A-IX/P55 | TRIPLET EXIPLEXES IN WATER-METHYIPYRIDIN SOLUTION LIGHTING AT 254NM, O.V. Agashkin, L.M. Shustova, S.G. Serebrennikova, D.Kh. Sembaev, Chemystry Institute, Sh.Walykhanova str.106, 4800100 Almaty, Kazakhstan |
| A-IX/P56 | LIGHT-INDUCED TRANSFER PHENOMENA IN HETEROGENEOUS SYSTEMS, V.V. Levdansky, Heat and Mass Transfer Institute NAS RB, 15 P.Brovka St., 220072 Minsk, Belarus |
| A-IX/P57 | SOLID-PHASE TECHNOLOGY FOR SEMICONDUCTOR DEVICES FABRICATION, A. Pokhmurska, O. Bonchik, S. Kiyak, G. Savitski, Institute for Applied Problems of Mechanics and Mathematics of National Academy of Sciences of Ukraine, 3b Naukova Str., 290601, Lviv, Ukraine. |
| A-IX/P58 | EXPERIMENTAL LASER TREATMENT OF CHRONIC ARTHRITIS, M.R. Guerino and V. Baranauskas, FEEC Av. A. Einstein N.400, 13083- 970, UNICAMP, Campinas -SP, Brazil, and A.C. Guerino, IB - UNESP, and N. Parizotto, Fisioterapia -USFSCAR - Sao Carlos, SP, Brazil. |
| A-IX/P59 | OPTICAL INTERFERENCE AND DIFFRACTION IN REFLECTION FROM PHOTOCHEMICALLY FABRICATED GAUSSIAN INTERFACES, L. Koker and K. W. Kolasinski, School of Chemistry, University of Birmingham, Edgbaston, Birmingham, B15 2TT, UK |
| A-IX/P60 | OPTICAL PARAMETERS OF SILICON AND GERMANIUM DURING NANOSECOND LASER – INDUCED MELTING, E.I. Gatskevich and G.D. Ivlev, Institute of Electronics of the Belarus National Academy of Sciences, 22 Logoiskii Trakt, 2200090 Minsk, Belarus |
| 15:00-15:30 | BREAK |
| A-X.1 | 15:30-16:00 | -Invited- | STUDIES OF LASER DESORPTION FROM MODIFIED SURFACES OF IONIC SINGLE CRYSTALS, J. Thomas Dickinson, Department of Physics and Materials Science Program, Washington State University, Pullman, WA 99164-2814, USA. |
| A-X.2 | 16:00-16:30 | -Invited- | LASER SHAPING OF PHOTONIC MATERIALS: DEEP-ULTRAVIOLET AND ULTRAFAST LASERS, P.R. Herman, R.S. Marjoribanks*, A. Oetl, K. Chen, Dept. of Electrical & Compute Eng, University of Toronto, 10 King’s College Rd, Toronto, ON, Canada, M5S 3G4; and Photonics Research Ontario; *Dept. of Physics |
| A-X.3 | 16:30-16:45 | ABLATION PHASES AND THE ROLE OF INCUBATION IN THE MICRO-STRUCTURING OF UV WINDOW MATERIALS WITH ULTRA-SHORT LASER PULSES, D. Ashkenasi, R. Stoian and A. Rosenfeld, Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Rudower Chaussee 6, 12489 Berlin, Germany | |
| A-X.4 | 16:45-17:00 | CHARACTERIZATION OF MODIFICATIONS OF POLYMER SURFACE AFTER A LOW FLUENCE EXCIMER LASER TREATMENT, P. Laurens, M. Ould Bouali, F. Méducin., CLFA, 16 bis av. Prieur de la Côte d'Or, 94114 Arcueil Cedex, France | |
| A-X.5 | 17:00-17:15 | PROPERTIES OF ION-ASSISTED PULSED LASER DEPOSITED h-BN/c-BN LAYER SYSTEMS, S. Weissmantel and G. Reisse, Hochschule Mittweida, University of Applied Sciences, Technikumplatz 17, 09648 Mittweida, Germany | |
| A-X.6 | 17:15-17:30 | NUMERICAL MODELING OF LASER INDUCED PHASE TRANSITIONS IN SILICON. A. Mittiga, L. Fornarini, ENEA, via Anguillarese 301, 00060 Roma, Italy, R. Carluccio CNR-IESS, via Cineto Romano 42, 00156 Roma Italy. | |
| A-X.7 | 17:30-17:45 | STOICHIOMETRIC TRANSFER IN PULSED LASER DEPOSITION OF HYDROXILAPATITE, J.L. Arias, M.B. Mayor, J. Pou, B. León and M. Pérez-Amor, Departamento de Física Aplicada, Universidade de Vigo, Lagoas-Marcosende 9, 36200 Vigo, Spain. | |
| A-X.8 | 17:45-18:00 | LASER IMPLANTATION OF DICYANOANTHRACENE IN POLY (METHYL METHACRYLATE) BY A 100 NM- OPENING TIP, M. Goto, S. Kawanishi, Japan Atomic Energy Research Institute, 25-1 Mii-Minami-Machi, Neyagawa, Osaka 572-0019, Japan and H. Fukumura, Tohoku University, Aoba-ku, Sendai 980-8578, Japan | |
| A-X.9 | 18:00-18:15 | MODELING THE EXCIMER LASER CLEANING OF SILICON : THE EFFECTS OF THE CHEMICAL NATURE AND ROUGHNESS OF PRACTICAL PARTICLES. Xiaoguang Wu, E. Sacher and M. Meunier, École Polytechnique de Montréal, P.O. Box 6079, Montréal, Canada H3C 3A7 | |
| A-X.10 | 18:15-18:30 | BEAM-INDUCED LOW TEMPERATURE DEPOSITION PROCESSES OF MATERIALS, FROM SELECTIVE COATINGS TO 3 D NANOSTRUCTURES, P. Hoffmann, E. Halary, G. Benvenuti, F. Cicoira, Institute of Applied Optics, BM, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland |
Friday, June 4, 1999 - Morning
Vendredi 4 juin 1999, Matin
| A-XI.1 | 08:30-09:00 | -Invited- | A MICROSCOPIC VIEW OF LASER ABLATION, B.J.Garrison, L.V. Zhigilei, and J. A. Smirnova, Department of Chemistry, 152 Davey Laboratory, Penn State University, University Park, PA 16802, USA |
| A-XI.2 | 09:00-09:30 | -Invited- | MICROFABRICATION OF TRANSPARENT MATERIALS WITH SUPER-HEATED MOLECULES GENERATED BY LASER ABLATION, Akira Yabe, Jun Wang and Hiroyuki Niino, National Institute of Materials and Chemical Research 1-1 Higashi, Tsukuba 305-8565, Japan |
| A-XI.3 | 09:30-09:45 | STRUCTURE FORMATION IN EXCIMER LASER ABLATION OF STRETCHED POLY(ETHYLENE TEREPHTHALATE) (PET): THE INFLUENCE OF SCANNING ABLATION, F. Wagner, P. Hoffmann, Institute of Applied Optics, EPFL, Lausanne, Switzerland | |
| A-XI.4 | 09:45-10:00 | UV LASER-ASSISTED MODIFICATION OF THE OPTICAL PROPERTIERS OF POLYMETHYLMETHACRYLAT, C. Wochnowski, S. Metev, G. Sepold, BIAS-Bremer Institute of Applied Beam Technology, Klagenfurter Str. 2, 28359 Bremen, Germany | |
| 10:00-10:25 | BREAK |
| A-XII.1 | 10:25-10:50 | -Invited- | PHOTOABLATION WITH SUB-10 FS LASER PULSES, M. Lenzner, F. Krausz, Vienna University of Technology, Gusshausstr. 27, 1040 Wien, Austria; J. Krueger, W. Kautek, Federal Institute for Material Research, Unter den Eichen 87, 12205 Berlin, Germany |
| A-XII.2 | 10:50-11:15 | -Invited- | A NEW APPROACH TO LASER DIRECT WRITING ACTIVE AND PASSIVE MESOSCOPIC CIRCUIT ELEMENTS, D.B. Chrisey, A. Pique, J. Fitz-Gerald, R.C.Y. Auyeung, R.A. McGill, H.D. Wu and M. Duignan*, Naval Research Laboratory, Washington, D.C., USA ; *Potomac Photonics Inc., Lanham, MD, USA |
| A-XII.3 | 11:15-11:40 | -Invited- | EXCIMER LASER MICROMACHINING FABRICATION AND APPLICATIONS OF DIELECTRIC MASKS, J. Ihlemann, K. Rubahn, Laser-Laboratorium Göttingen, PO Box 2619, 37016 Göttingen, Germany |
| A-XII.4 | 11:40-11:55 | LASER MICROMACHINING FOR APPLICATION SIN THIN FILM TECHNOLOGY, W. Pfleging, A. Ludwig, K. Seemann, R. Preu*, Forschungszentrum Karlsruhe GmbH, Institut für Materialforschung I, PO Box 3640, 76021 Karlsruhe, Germany ; * Fraunhofer Institut for Solar Energy Systems, Oltmannsstr. 5, 79100 Freiburg, Germany | |
| A-XII.5 | 11:55-12:10 | FEMTOSECOND INDEX GRATING IN BARIUM FLOURIDE; EFFICIENT SELF DIFFRACTION AND ENHANCEMENT OF SURFACE SHG; Th. Schneider, D. Wolfframm, R. Mitzner, and J. Reif, LS Experimentalphysik II, BrandenTechnische Uni-versität Cottbus, Universitätsplatz 3-4, 03044 Cottbus, Germany | |
| 12:10-13:30 | LUNCH |
Friday, June 4, 1999 - Afternoon
Vendredi 4 juin 1999, Après-midi
| A-XIII.1 | 13:30-13:55 | -Invited- | LASER COOLING AND PHOTOIONIZATION OF ALKALI ATOMS, E. Arimondo, Istituto nazionale di Fisica della Materia and Dipartimento di Fisica, Univerita di Pisa, 56126 Pisa, Italie |
| A-XIII.2 | 13:55-14:10 | TIME-RESOLVED STUDIES OF ELECTRON-PHONON RELAXATION IN METALS USING A FREE-ELECTRONLASER, M. Satta, D.R. Ermer*, M.R. Papantonakis*, C. Flamini, R.F. Haglund Jr* and A. Mele, Dipartimento di Chimica, Universita la Sapienza, Piazzale A. Moro 5, 00185 Roma, Italy; * Department of Physics and Astronomy, Vanderbilt University, 6301 Stevenson Center, Nashville TN 37235, USA | |
| A-XIII.3 | 14:10-14:25 | SURFACE CHARACTERIZATION BY PHOTOCURRENT MEASUREMENTS, M.L. Polignano, N. Bellafiore, D. Caputo, A.P. Caricato, A. Modelli, R. Zonca, SGS-Thomson Microelectronics, Via Olivetti 2, 20041 Agrate Brianza (Milano), Italy | |
| A-XIII.4 | 14:25-14:40 | DIAMOND AS A CHARACTERISATION TOOL FOR NOVEL PHOTON SOURCES, P. Bergonzo, A. Brambilla, D. Tromson, C. jany, F. Foulon, LETI (CEA-Technologies Avancées)/DEIN/SPE, CEA/Saclay, 91191 Gif-sur-Yvette, France | |
| A-XIII.5 | 14:40-14:55 | IN-SITU AND REAL-TIME MONITORING BY ELLIPSOMETRY DURING FABRICATION OF SUBMICRON TITANIUM NITRIDE /TITANIUM SILICIDE ELECTRONIC DEVICES, P. Patsalas, C. Charitidis and S. Logothetidis, Department of Physics, Aristotle University of Thessaloniki, 54006 Thessaloniki, Greece | |
| A-XIII.6 | 14:55-15:10 | ATOMISTIC COMPARATIVE STUDY OF VUV PHOTODEPOSITED SILICON NITRIDE ON InP(100) BY SIMULATION AND ATOMIC FORCE MICROSCOPY, J. Flicstein, E. Guillonneau, J. Marquez***, M. Medjdoub, L.S. How Kee Chun, D. Maisonneuve, C. David**, Zh.Zh. Wang**, J.F. Palmier, J.L. Courant***, France Telecom C.N.E.T./DTD Laboratoire de Bagneux*, 196, ave. H. Ravera, 92225 Bagneux, France ; *C.N.R.S. URA 250,**C.N.R.S. L2M, Bagneux,***E.N.S.T. rue Barrault, Paris, France | |
| A-XIII.7 | 15:10-15:25 | DIAMOND DETECTORS FOR UV EXCIMER LASER PROCESSING APPLICATIONS, Stuart P. Lansley, Olivier Gaudin, Micheal D Whitfield, Richard B. Jackman, Electronic Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK ; Robert D. McKeag, Centronic Ltd, Centronic House, King Henrys Drive, New Addington., Croydon, CR9 0BG,UK and Nadeem Rizvi, Exitech Ltd, Hanborough Park, Long Hanborough, Oxford, OX8 8LH, UK | |
| Concluding, Remarks |
End of Symposium A
