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Fabrication of advanced microelectronics and optoelectronics devices requires an improvement of the techniques used for material and device characterisation. The aim of the Symposium is to promote and encourage interactions between academic and industrial research (instrument manufacturers and IC industry) to address scientific and technological challenges to improved and novel characterisation techniques. The most used semiconductor material is silicon and it will be for the coming years. However, the introduction of larger wafers (450 mm wafers are alredy planned) will require significant improvements in the characterisation and metrology. With the use of larger wafer dimensions the single wafer value significantly increases so that the interest grows for non-destructive characterisation techniques with respect to the single device or the entire wafer. Many methods can be destructive or not depending on sample preparation. Novel sample preparation procedures, non-destructive for the wafer, will be also considered. The intent is to identify the techniques matching the requirements for large diameter wafers and future device generations and to establish their sensitivity, properties and application limits. We are considering silicon-based technology and materials such as Si, SiGe, ferroelectrics and SiC. Many materials are used for silicon device fabrication such as silicon substrates, oxide layers, dielectrics, conductive materials. In those materials the improvements will be on both their properties and dimensions (characterisation of smaller and smaller structures towards atomic resolution). Characterisation of devices include carrier profiling, with particular emphasis to ultra shallow junctions, interface and surface properties considering their impact on the device characteristics, and sub-micron structure definition. Silicon germanium is going to be intensively used for Heterojunction Bipolar Transistors fabrication. So that, its characterisation, in a device fabrication environment, is acquiring importance. Ferroelectric based non-volatile memories need characterisation of material properties as well as the correlation between morphological, electrical and device properties. Silicon carbide is quite an interesting material for power and high speed devices. Its characterisation is peculiar due to several properties (hardness, transparency, and so on). 3C-SiC can be epitaxially grown on silicon so that its integration with silicon technology can be possible. Methods to determine defects, carrier profiles and other properties in silicon carbide will be also discussed.
In the symposium particular attention will be paid to the discussions. After each presentation the participants will have the possibility to raise for many questions and round table discussions will be organised during the meeting. The contributions should evidence the characteristics of the technique and methodology proposed and consider its limits and applications.
Topics of solicited papers include, but are not limited to:
- Characterisation of large diameter wafers (up to 450 mm)
- Determination of low impurity concentration (TXRF, AAS, IMS, SIMS, TOF-SIMS, …)
- Wafer cleaning and inspections (TXRF, static SIMS, …)
- Lifetime measurements (mPCD, SPV, Elymat, Epi-t, …)
- Defect density and properties (infrared, TEM, XRD)
- 1D and 2D submicron carrier profiling (SRP,nanoSRP, SCM, Hall measurements, etching, …)
- Dielectrics and interfaces characterisation
- Devices structures imaging and critical dimension (CD SEM, CD AFM, TEM, …)
Tentative list of invited speakers
- A.Diebold (Sematech, USA) Roadmap needs for semiconductor characterisation.
- C.Brundle (AMAT, USA) Full Wafer Characterisation needs for 300mm: Defects and Metrology.
- E. Janzen (Linköping Univ, Sweden) Material Characterisation need for SiC based devices.
- P. de Wolf (Digital Instruments, USA) Scanning probe microscopy on semiconductors.
- W. Henley (SDI, USA) Lifetime based techniques for wafer processing monitor.
- H.Edwards (TI, USA) Application of SCM for ULSI-control.
- P.Borden (Boxer Cross, USA) Optical non-destructive characterisation of ultra-shallow junctions.
- T. Clarysse (IMEC, Belgium) SRP for ultra-shallow profiling.
- B.G. Svensson (KTH, Sweden) Dopant redistribution and formation of electrically active defect complexes in SiGe.
- E. Napolitani (University of Padua, Italy) Ultrashallow profiling of semiconductors by SIMS: methods and applications
- F. Tardiff (Leti, France) Characterization during cleaning and wafer processing
Symposium organizers:
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