Nanometer structures attract high scientific and technological attention by tailoring material properties artificially. Epitaxial growth is a promising way to produce low dimensional structures (2-, 1-, 0-dimensional) with nanometer dimensions for a variety of materials. This 2000 symposium will focus both the basic understanding of interface formation and formation of nanostructures and microelectronics applications of the epitaxial films in the nanometer scale. It will specially deliver a forum for discussions of common aspects among researchers working on silicon and compound semiconductors based heterostructures. Papers solicitated in the following topical areas but not limited to are:

- Self and cooperative assembly of nanostructures

- Microscopic description and phenomena of growth

- Influence of strain on surface morphology and defect structure

- Growth on patterned substrates

- Segregation and surfactants

- Electronic and optoelectronic properties and devices with nanometer layers and atomically sharp interface

- New device concepts and circuit architectures

- Alternative or competing methods and systems

Scientific Committee:

G.Abstreiter (Germany), I.Berbezier (France), K.Eberl (Germany), H. Hasegawa (Japan), H.J.Herzog (Germany), M.Kelly (UK), E.Kasper (Germany), M.Lagally (USA), D.Paul (UK), M. Van Rossum (Belgium), K.Wang (USA)

H.J.Herzog (Germany), V. Le Thanh (France), K. de Meyer (Belgium), P.Thompson (USA), J.Yu (China)