Article : [TRIAC060]

Info : INSPEC Answer Number 1102 - 25/02/2000
Info : INSPEC Numéro de réponse 42 - 29 septembre 1999

Titre : W. KAUFFMAN, H.-P. ALBUS, The biplanar thyristor: A method for combining reliability and low costs, 1968.

Cité dans : [DIV066]  Recherche sur le mot clé : TRIAC*

Source : International electron devices meeting New York, NY, USA: IEEE, 1968.
Pages : 110 - 112 of 153pp.
Lieu : Conference Washington, DC, USA.
Date : 23-25 Oct 1968
Sponsor : IEEE Electron Devices Group
Info : Country of Publication : United States; Document Type : Conference Article
Language : English
Stockage : Thierry LEQUEU

Abstract :
junctions of thyristors such as Silicon Controlled Rectifiers and
Triacs having voltage ratings >or=200v are normally fabricated by
diffusing a P-type substrate. This approach provides the wide 'N
base' region which is necessary for adequate depletion from either
junction at high voltages. Currently, either mesa or planar
technologies are used. This paper introduces the biplanar technology
as a third and in many ways more attractive method for fabricating
the two high-voltage junctions. The method of forming other
junctions in a thyristor is identical in all three technologies and
so will not be discussed. High voltage junctions in a mesa structure
have a flat shape. Therefore the junctions are exposed at the edge
of the silicon die. In the planar structure the junctions are shaped
by masking, epitaxial of diffusion techniques to intersect the top
plane of the die. Therefore passivation techniques (thermal SiO2,
phosphosilicate glass, or silicon nitride) normally used in planar
transistor technology can be used. However, since the bottom
junction is close to the bottom surface, the fabrication techniques
required to bring that junction to the top surface involve very deep
diffusions and hence can be relatively difficult.

Accession_Number : 1969:43891

Reference : 0

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