Y.A. YEVSEYEV, V.B. KOZLOV, Y.A. KOVALENKO, E.V. RYTCHKOV, "Microelectronic technology in power integrated circuits.", MICRO'97.

Y.A. YEVSEYEV, V.B. KOZLOV, Y.A. KOVALENKO, E.V. RYTCHKOV, "Microelectronic technology in power integrated circuits.", MICRO'97. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [TRIAC011]

Info : INSPEC Answer Number 2 - 29/09/1999

Titre : Y.A. YEVSEYEV, V.B. KOZLOV, Y.A. KOVALENKO, E.V. RYTCHKOV, Microelectronic technology in power integrated circuits., MICRO'97.

Cité dans : [DIV066]  Recherche sur le mot clé : TRIAC*

Auteur : Y.A. Yevseyev
Auteur : V.B. Kozlov
Auteur : Y.A. Kovalenko
Auteur : E.V. Rytchkov, (Inst. of Electron., Moscow, Russia)

Source : 14th Australian Microelectronics Conference. Microelectronics: Technology Today for the Future. MICRO '97 Proceedings
Adresse : Milsons Point, NSW, Australia: IREE Soc, 1997.
Pages : 65 à 69 of xii+308 pp.
Conference : Melbourne, Vic., Australia
Date : 28 Sept-1 Oct 1997
Sponsors : Defence Sci. & Technol. Organ
ISBN : 0-909394-43-1
Stockage : Thierry LEQUEU

Abstract :
In order to apply the main ideas of microelectronic technology (primarily the realisation of circuits in single crystal form)
to power electronics, the family of reverse directed cells (diodes, thyristors, triacs, photothyristors and phototriacs)
were combined with the known forward directed cells to make it possible to project small size power integrated circuits
(PICs) of controlled and uncontrolled rectifiers and modules. The insulation between the cells is in excess of 1000 V.

Controlled_Indexing :
MODULES; PHOTOTHYRISTORS; POWER INTEGRATED CIRCUITS; POWER SEMICONDUCTOR DIODES; POWER SEMICONDUCTOR SWITCHES;
SOLID-STATE RECTIFIERS; THYRISTORS
Supplementary_Indexing :
microelectronic technology; power integrated circuits; single crystal circuit realisation; power electronics;
reverse directed cells; diodes; thyristors; triacs; photothyristors; phototriacs; forward directed cells;
controlled rectifiers; uncontrolled rectifiers; power modules; cell insulation; 1000 V, Physical Properties, voltage 1.0E+03 V

Accession_Number : 1998:5972218
Référence : 1 refs.

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