C. FURBOCK, K. ESMARK, M. LITZENBERGER, D. POGANY, G. GROOS, R. ZELSACHER, M. STECHER, E. GORNIK, "Thermal and free carrier concentration mapping during ESD event in Smart Power ESD protection devices using an improved laser interferometric technique", ER

C. FURBOCK, K. ESMARK, M. LITZENBERGER, D. POGANY, G. GROOS, R. ZELSACHER, M. STECHER, E. GORNIK, "Thermal and free carrier concentration mapping during ESD event in Smart Power ESD protection devices using an improved laser interferometric technique", ER Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [SHEET462]

Titre : C. FURBOCK, K. ESMARK, M. LITZENBERGER, D. POGANY, G. GROOS, R. ZELSACHER, M. STECHER, E. GORNIK, Thermal and free carrier concentration mapping during ESD event in Smart Power ESD protection devices using an improved laser interferometric technique, ERSEF'2000, pp. 1365-1370.

Cité dans : [DATA126] ESREF'2000, 11th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Dresden, Germany, 2-6 octobre 2000.
Cité dans : [DATA204] fke, Institut für Festkörperelektronik (E362), 2000.
Cité dans :[THESE090] S. MOREAU, Fiabilité environnementale des composants de puissance : le TRIAC, Thèse de Doctorat, soutenue le 17 mai 2005, 127 pages.

Auteur : C. Fürböck
Auteur : K. Esmark
Auteur : M. Litzenberger
Auteur : D. Pogany
Auteur : G. Groos
Auteur : R. Zelsacher
Auteur : M. Stecher
Auteur : E. Gornik

Source : ESREF'2000, "11th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", Dresden, Germany.
Date : 2-6 octobre 2000
Stockage : Thierry LEQUEU
Pages : 1365 - 1370
Info : ISE + thermal + laser. Presentation de M. Litzenberger.

Bibliographie

References : 14
[1] Amerasekera A and Duvvury D. ESD in silicon integrated circuits. J Wiley & Sons, 1995.
[2] Krieger G. Thermal response of integrated circuit input devices to an electrostatic energy pulse, IEEE Trans. Electron Dev., ED-34 (1987) 877-882.
[3] Stricker AD, Mettler S, Wolf H, Mergens M, Wilkening W, Gieser H and Fichtner W. Characterization and optimization of a bipolar ESD-device by measurements and simulations. Proc. EOS/ESD Symp. (1998) 290-300.
[4] Mergens M, Wilkening W, Mettler S, Wolf H, Stricker A and Fichtner W. Analysis and compact modeling of lateral DMOS power devices under ESD stress conditions. Proc. EOS/ESD Symp. (1999) 1-10.
[6] Goldstein M, Sölkner G and Gornik E. Heterodyne interferometer for the detection of electric and thermal signals in integrated circuits through the substrate. Rev. Sci. Instr. 64 (1993) 3009-3013.
[7] Seliger N, Habas P, Pogany D and Gornik E. Time-resolved analysis of self-heating in power VDMOSFETs using backside laserprobing. Solid-State Electronics 41 (1997) 1285-1292.
[8] Fürböck C, Seliger N, Pogany D, Litzenberger M, Gornik E, Stecher M, Gossner H and Werner W. Backside Laserprober characterization of thermal effects during high current stress in Smart Power ESD protection devices, IEDM Tech. Dig. (1998) 691-694.
[9] Fürböck C, Pogany D, Litzenberger M, Gornik E, Seliger N, Gossner H, Müller-Lynch T, Stecher M and Werner W. Interferometric thermal mapping during ESD stress and failure analysis of smart power technology ESD protection devices. Proc. EOS/ESD Symp. (1999) 241-250.
[10] Gossner H, Müller-Lynch T, Esmark K and Stecher M, Wide range control of the sustaining voltage of ESD protection elements realized in a smart power technology. Proc. EOS/ESD Symp. (1999) 19-27.
[11] McCaulley JA, Donnelly TVM, Vernon M and Taha I. Temperature dependence of the near-infrared refractive index of sdilicon, gallium arsenide, and indium phosphid. Phys. Rev. 49 (1994) 7408-7417.
[12] Bertolotti M, Bogdanov V, Ferrari A, Jascow A, Nazorova N, Pikhtin A and Schirone L. Temperature dependence of the refractive index in semiconductors. J. Opt. Soc. Am. B 7 (1990) 918-922.
[13] Soref RA and Bennett BR. Electrooptical effects in silicon. IEEE J. Quantum Electronics 23 (1987) 123-129.
[14] ISE Integrated Systems Engineering AG, Switzerland, ISE TCAD Manuals, 1998, Release 5.0, Part 14: DESSIS.

  [1] : [SHEET484] M. GOLDSTEIN, G. SöLKNER, E. GORNIK, Heterodyne interferometer for the detection of electric and thermal signals in integrated circuits through the substrate, Rev. Sci. Instr. 64 (1993) 3009-3013.
  [2] : [SHEET485] H. Gossner, T. Müller-Lynch, K. Esmark, M. Stecher, Wide range control of the sustaining voltage of ESD protection elements realized in a smart power technology, Proc. EOS/ESD Symp. (1999) 19-27.
  [3] : [SHEET486] J.A. MCCAULLEY, T.V.M. DONNELLY, M. VERNON, I. TAHA, Temperature dependence of the near-infrared refractive index of silicon, gallium arsenide, and indium phosphid, Phys. Rev. 49 (1994) 7408-7417.
  [4] :  [PAP158]  -------
  [5] :  [PAP158]  -------
  [6] :  [PAP158]  -------
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  [8] : [SHEET147] C. Fürböck, N. Seliger, D. Pogany, M. Litzenberger, E. Gornik, M. Stecher, H. Gossner, W. Werner, Backside Laserprober characterization of thermal effects during high current stress in Smart Power ESD protection devices, IEDM Tech. Digest, 1998, pp. 691

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