Article : [SHEET378]

Info : INSPEC Answer Number 3, le 19/06/2000.

Titre : Experimental and numerical analysis of GTO's snubberless turn-off operations.

Cité dans : [DATA146] LTN, Laboratoire des Technologies Nouvelles, INRETS, Arcueil, France.

Source : Microelectronics Journal (March-June 1996) vol.27, no.2-3, p.231-41.
References : 8 refs.
Published : Elsevier
Price : CCCC 0026-2692/96/$15.00
CODEN : MICEB9
ISSN : 0026-2692
SICI : 0026-2692(199603/06)27:2/3L.231:ENAS;1-P
Document_Type : Journal
Treatment_Code : Practical; Theoretical; Experimental
Info : Country of Publication : United Kingdom
Language : English
Stockage :

Abstract :
The avalanche mechanism during the snubberless turn-off process of a
GTO thyristor has been studied on the basis of experimental
measurements in combination with numerical simulations. It has been
shown that in chopper circuit and under inductive load, a
'self-controlled' avalanche process takes place with a
characteristic voltage waveform. In particular, the gate drive
influences not only the storage period of the transient process but
also the rate of rise of the anode voltage and the level of the
generated avalanche current. For small devices, thermal stresses may
be reduced owing to hard drive conditions which lower the voltage
rise delay time and consequently turn-off losses.

Accession_Number : 1996:5284022

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