R.L. DAVIES, J. PETRUZELLA, "P-N-P-N charge dynamics", 1967, procceding of IEEE, vol. 55, no. 8, pp. 1318-1330.
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Titre : R.L. DAVIES, J. PETRUZELLA, P-N-P-N charge dynamics, 1967, procceding of IEEE, vol. 55, no. 8, pp. 1318-1330.
Cité dans :[THESE035]
Auteur : R.L. DAVIES
Auteur : J. PETRUZELLA
Lien : THESE035.HTM#Bibliographie - référence [52].
Stockage : Thierry LEQUEU, le 21 juin 2000
Source : procceding of IEEE
Volume : 55
Numéro : 8
Pages : 1318 - 1330
Date : 1967
Abstract :
A simple unified charge model applicable to both unsaturated and saturated p-n-p-n dynamic behaviour
is analyzed. Expressions are obtained for three important dynamic conditions: di/dt prior to
saturation, voltage drop during tum-on, and reverse current during recovery. Comparison with
measurement shows that interdigitated gate p-n-p-n devices match one-dimensional turn-on theory and
closely approximate the behaviour of p-i-n rectifiers under similar pulsed conditions. The major
analytical simplifications of the one-dimensional theory are examined in the Appendixes.
The limitations imposed by these simplifications can be avoided by use of numerical integration
techniques.
References : 17
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[02] : I.M. Macintosh, "The electrical characteristics of silicon p-n-p-n triodes," Proc. IRE. vol. 46, pp. 1229-1235, june 1958.
[03] : R.W. Aldrich and N. Holonyak, "Multiterminal p-n-p-n switches," Proc. IEEE, vol. 46, pp. 1236-1239, june 1958.
[04] : J.A. Hoerni and R.N. Noyce, "PN(pi)N switches," IRE WESCON Conv. Rec., pp. 172-175, August 1958.
[05] : I.A. Lesk, "Germanium p-n-p-n switches,"IRE Trans. on Electron Device, vol. ED-6, pp. 28-35, january 1959.
[06] : A.N. Baker, J.M. Goldey, and I.M. Ross, "Recovery time of p-"-p-n diodes," IRE WESCON Conv. Rec., pp. 43-48, 1959.
[07] : T. Misawa, "Turn-on transient of p-n-p-n triode," J. Electronics and Control, vol. 7, pp. 523-533, 1959.
[08] : F.E. Gentry, F.W. Gutzwiller, N. Holonyak, and E. E. Von-Zastrow, "Semi Conductor Controlled Rectifiers", Englewood Cliffs, N. J. : Prentice-Hall. 1964.
[09] : A.K. Jonscher, "Notes on the theory of four-layer semiconductor switches," Solid-Stale Electronics, vol. 2, pp. 143-148, 1961.
[10] : K. Hubner, M. Melehy, and R. L. Biesele, "Uniform turn-on in four-layer diodes," IRE Trans. on Electron Devices, vol. ED-8, pp. 461-464, 1961.
[11] : G.O. Bergman, "The gate-triggered turn-on process in thyristors," Solid-State Electronics, vol. 8, pp. 757-765, 1965.
[12] : W.H. Dodson and R.L. Longini, "Probed determination of turn-on spread of large area thyristors", IEEE Trans. on Electron Devices, vol. ED-13, pp. 478-484, May 1966.
[13] : C. LeCan, K. Hart, and C. de Ruyter, "The Junction Transistor as a Switching Device", New York : Reinhold. 1962.
[14] : R. Beaufoy and J.J. Sparkes, "The junction transistor as a charge-controlled device," ATE J., vol. 13, pp. 310-327, October 1957.
[15] : K.M. Van Vliet, "High injection theories of the p-n junction in the charge neutrality approximation," Solid-State Electronics, vol. 9, pp. 185-201, 1966.
[16] : N.R. Howard and G. W. Johnson, "P+/I/N+ silicon diodes at the high forward current densities," Solid-State Electronics, vol. 8, pp. 275-284, 1965.
[17] : A.K. Jonscher, "Principles of Semiconductor Device Operation", London: G. Bell and Sons, 1960, pp. 54-56.
[1] : [PAP158] -------
[2] : [SHEET400] I.M. Macintosh, The electrical characteristics of silicon p-n-p-n triodes, Proc. IRE. vol. 46, pp. 1229-1235, june 1958.
[3] : [PAP158] -------
[4] : [PAP158] -------
[5] : [PAP158] -------
[6] : [PAP158] -------
[7] : [SHEET401] T. Misawa, Turn-on transient of p-n-p-n triode, J. Electronics and Control, vol. 7, pp. 523-533, 1959.
[8] : [PAP158] -------
[9] : [PAP158] -------
[10] : [SHEET399] K. Hubner, M. Melehy, R. L. Biesele, Uniform turn-on in four-layer diodes, IRE Trans. on Electron Devices, vol. ED-8, pp. 461-464, 1961.
[11] : [PAP159] ...
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