Article : [SHEET206]

Titre : J.W.MOTTO JR, W.H. KARSTAEDT, J.M.SHERBONDY, S.G. LESLIE, Modeling Thyristor and Diodes; On-State Voltage and Transient Thermal Impedance, Effective Tools in Power Electronic Design,

Cité dans :[SHEET192] E. PROFUMO, A. TENCONI, S. FACELLI, B. PASSERINI, A. GUERRA, An Experimentally Validated Transient Thermal Impedance Model for High Power Diodes and Thyristors, EPE Journal, Volume 9, N° 3/4, january 2000, pp. 11-16.

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Abstract :
Circuit modeling is an essential tool in the design of power electronic applications. Both the
on-state forward voltage drop and transient thermal impedance of high power SCR’s and Diodes are
complex functions requiring, in the past, tedious, copious, inefficient, semi-mechanical calculations
to evaluate one or two specific conditions for a given power electronic application. Today, with the
availability of personal computers, greater efficiency and accuracy can be realized using
mathematical models of these basic characteristics. The widespread use of these models, depends upon;
the understanding of how to use these models, the trade-off of the accuracyand simplicity of the
models and the availability of parametric data for devices. This main objective of this paper is
how to use the modeling equations to evaluate a given Power Electronic Application.

Previous papers by the authors [1][2][3] and others [6][8] have addressed this subject. As has been
described, the forward on-state forward voltage drop can be modeled by both the classical ABCD and
the new MNOP... parameters. The transient thermal impedance has been shown to be well represented
via four or five exponential terms representing the significant transient thermal time constants of
the device. The methodology to quickly and accurately calculate the forward voltage drop and
transient thermal impedance modeling parameters has been discussed and described in detail1,2,3.
This paper will describe the techniques for using the basic device modeling equations to evaluate a
given power electronic application. Both the digital (hard code) simulation and "analog" PSPICE
simulation techniques will be described. Also, a new tool, called STARSim, will be described.
STARSim permits comparison of the older superposition method and new modeling method by performing
the calculations using both approaches. A simple SCR model for PSPICE incorporating the on-state
forward voltage drop and transient thermal impedance models is also described and evaluated.
This information is considered to be important in providing the tools required for power electronic
design engineers to quickly evaluate a given device in proposed or existing power electronic
application.

REFERENCES : 10
[1] : J. W. Motto Jr., William H. Karstaedt, Jerry M. Sherbondy, Scott G. Leslie, "Thyristor(Diode) On-State Voltage, The ABCD Modeling Parameters Revisited Including Isothermal Overload and Surge Current Modeling" IEEE-IAS Annual Meeting, San Diego, California, October 1996
[2] : J. W. Motto Jr., William H. Karstaedt, Jerry M. Sherbondy, Scott G. Leslie, "Thyristor(Diode) Transient Thermal Impedance Modeling Including the Spatial Temperature Distribution During Surge and Overload Conditions", IEEE-IAS Annual Meeting, Orlando Florida, October 1995
[3] : J. W. Motto Jr., "Thyristor(Diode) Transient Thermal Impedance Modeling and Verification for Inductive Load Applications" , IEEE-IAS Annual Meeting, Denver, Colorado, October 1994
[4] : J. W. Motto Jr., "Thyristor Steady State Current Ratings Past, Present and Future" , IEEE-IAS Annual Meeting, Toronto, Canada, October 1993
[5] : J. W. Motto Jr., "Computer Aided Analysis of Thyristor Current Ratings" I&GA, IEEE Group Meeting Pittsburgh Pennsylvania, October 1967
[6] : F. W, Gutzwiller and T. P. Sylvan "Power Semiconductors Under Transient and Intermittent Loads", AIEE Winter General Meeting, New York, New York January 31, 1960
[7] : W. E. Newell "Transient Thermal Analysis of Solid State Power Devices - Making the Dreaded Process Easy", IEEE Transactions on Industry and General Applications Vol IA-12 July August, 1976
[8] : D.E. Piccone, L.D. Eriksson, Dr. D.J. Urbanek, W.H. Tobin and I.L. Somos, "A Thermal Analog of Higher Accuracy and Factory Test Method for Predicting Thyristor Fault Suppression Ratings" IEEE-IAS Annual Meeting October 1988
[9] : A. R. Hefner Jr. "A Dynamic Electro.-Thermal Model for the IGBT" IEEE Transactions on Industry Applications Vol 30 No 2 March/April 1994
[10] : C. D. Mohler, "Digital Computer Calculation of Rectifier and Silicon Controlled Rectifier Ratings", AIEE Winter General Meeting, , New York, New York, January 30, 1962

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