Article : [SHEET167]
Info : INSPEC Answer Number 123 - 22/02/2000
Titre : J.W. HATHAWAY, C.C. YU, Thermal fatigue testing of discrete components, IBM, 1977.
Cité dans : [DATA035] Recherche sur les mots clés thermal + fatigue + semiconductor et reliability + thermal + cycle, mars 2004.Auteur : Hathaway, J.W.;
Source : IBM Technical Disclosure Bulletin
Date : April 1977
Volume : 19, no.11,
Pages : 4269 - 4270.
References : 0 refs.
CODEN : IBMTAA
ISSN : 0018-8689
Document_Type : Journal
Treatment_Code : Practical
Info : Country of Publication : United States
Language : English
Stockage : Thierry LEQUEU
Abstract :
In power component applications, thermal fatigue failure may be
activated by mechanical stresses due to differences in thermal
coefficients of expansion of various materials in the component
package assembly. When the machine (e.g., power supply) is turned
on, the rise in case temperature of a device is mainly due to the
junction power dissipation rather than to the slowly rising ambient
temperature within the machine assembly. The silicon at the junction
has a thermal coefficient of expansion lower than those of the
packaging materials. Therefore, if the case is heated more quickly
than the junction, the device is subjected to a stress much higher
than in its normal use condition. In a thermal fatigue test it is
essential that the normal use condition be simulated in at least one
test cell. A suitable arrangement for temperature detection,
decoding and control is disclosed.
Accession_Number : 1978:1166602
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