Article : [SHEET129]

Info : COMPENDEX Answer Number 1 - 21/02/2000

Titre : Characterization of silicon solar cells with interdigitated contacts.

Cité dans : [DATA036] Recherche sur les mots clés 3D simulation with ISE for semiconductor, 2000.

Title : Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference.
Location : Anaheim, CA, USA
Date : 29 Sep 1997 - 03 Oct 1997
Info : Organization IEEE
Source : Conference Record of the IEEE Photovoltaic Specialists Conference 1997.IEEE, Piscataway, NJ, USA,97CB36026.
Pages : 71 - 74
CODEN : CRCNDP
ISSN : 0160-8371
Meeting_Number : 48334
Document_Type : Conference Article
Treatment_Code : Experimental
Language : English
Stockage : Thierry LEQUEU
Lien : private/DICKER.pdf - 466 Ko.

Abstract :
The characterization of two types of silicon solar cells with
interdigitated metal grids processed at Fraunhofer-ISE is presented
in this paper: the 19.2% efficient thin-film Silicon On Insulator
(SOl) cell and a 21.4% Rear Contact Cell (RCC).The spectrally
resolved reflection and absorption properties of the cells are
simulated with the 3D ray tracing program RAYN.Optical generation
profiles calculated with RAYN are utilized in the device simulator
DESSIS to model the observed electrical properties.The successful
modelling allows predictions of the performance of thinner SOI cells
and RCC cells processed from lower quality material.(Author abstract)

References : 10 Refs.

Accession_Number : 1998(28):3469

Appears : Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
ISBN : 0-7803-3767-0
Info : IEEE Catalog Number: 97CB36026, Total Pages: 1451
Accession_Number : 5883779

Abstract :
The characterization of two types of silicon solar cells with
interdigitated metal grids processed at Fraunhofer-ISE is
presented in this paper: the 19.2% efficient thin-film silicon on
insulator (SOI) cell and a 21.4% rear contact cell (RCC). The
spectrally resolved reflection and absorption properties of the
cells are simulated with the 3D ray tracing program RAYN. Optical
generation profiles calculated with RAYN are utilized in the
device simulator DESSIS to model the observed electrical
properties. The successful modelling allows predictions of the
performance of thinner SOI cells and RCC cells processed from
lower quality material.

Subjet_terms :
silicon; Si solar cell characterisation; interdigitated contacts;
interdigitated metal grids; thin-film silicon on insulator; rear
contact cell; spectrally resolved reflection properties;
spectrally resolved absorption properties; 3D ray tracing
program; RAYN; optical generation profiles; DESSIS; device
simulator; performance prediction; 19.2 percent; 21.4 percent; Si

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