M. BRUCKMANN, E. BAUDELOT, "Power semiconductors in transistorized converters. from the state-of-the-art to future trends", PCIM'99.

M. BRUCKMANN, E. BAUDELOT, "Power semiconductors in transistorized converters. from the state-of-the-art to future trends", PCIM'99. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [SHEET008]

Titre : M. BRUCKMANN, E. BAUDELOT, Power semiconductors in transistorized converters. from the state-of-the-art to future trends, PCIM'99.

Cité dans : [DATA001] T. LEQUEU, Evolution des composants de puissance et des IGBT, mars 2004.

Auteurs : Manfred Bruckmann, Dr. Eric Baudelot, Siemens, Germany

Stockage :
Lien : pcim/99pcim2.txt - K6.

Abstract :
The availability of reliable power devices with
controlled switching capability has pushed a lot of
progress in power conversion in the past.
Integration of converter functions lead to an ease in
converter design and size reduction. More than fifthy
years after the invention of the transistor it
dominates in a large application field.
Single chip inverters are now available for low end
power applications. High current IGBT modules enable
the manufacturing of MW Inverters in transistor
technique. Recent introduced High Voltage IGBT
Modules can be applied for medium voltage inverters.
At least new semiconductor materials are emerging,
which promise a reduction in terms of losses and
inverter size.
The paper comes to the conclusion that in the field
of power converters a lot of progress can even be
expected in the future.

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