Revue : [REVUE554]
Titre : Elsevier Science, Microelectronics Reliability, Volume 45, Issue 1, Pages 1-198, January 2005.
Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.Auteur : Elsevier Science
Volume : 45
Issue : 1
Pages : 1 - 198
Date : January 2005
[1] : Editorial - EDITORIAL
Pages : 1-2
Tomasz Brozek
Lien : vide.pdf - | Full Text + Links | PDF (208 K)
[2] : Modelling negative bias temperature instabilities in advanced p-MOSFETs
Pages : 3-12
M. Houssa
Lien : vide.pdf - | Full Text + Links | PDF (754 K)
[3] : Impact of NBTI and HCI on PMOSFET threshold voltage drift
Pages : 13-18
Prasad Chaparala and Douglas Brisbin
Lien : vide.pdf - | Full Text + Links | PDF (376 K)
[4] : Mechanism of nitrogen-enhanced negative bias temperature instability in pMOSFET
Pages : 19-30
Shyue Seng Tan, Tu Pei Chen, Chew Hoe Ang and Lap Chan
Lien : vide.pdf - | Full Text + Links | PDF (745 K)
[5] : Impact of negative bias temperature instability on digital circuit reliability
Pages : 31-38
Vijay Reddy, Anand T. Krishnan, Andrew Marshall, John Rodriguez, Sreedhar Natarajan, Tim Rost and Srikanth Krishnan
Lien : vide.pdf - | Full Text + Links | PDF (356 K)
[6] : Effects of inhomogeneous negative bias temperature stress on p-channel MOSFETs of analog and RF circuits
Pages : 39-46
Christian Schlünder, Ralf Brederlow, Benno Ankele, Wolfgang Gustin, Karl Goser and Roland Thewes
Lien : vide.pdf - | Full Text + Links | PDF (346 K)
[7] : Negative bias temperature instability on three oxide thicknesses (1.4/2.2/5.2 nm) with nitridation variations and deuteration
Pages : 47-56
Terence B. Hook, Ronald Bolam, William Clark, Jay Burnham, Nivo Rovedo and Laura Schutz
Lien : vide.pdf - | Full Text + Links | PDF (423 K)
[8] : Characterization of interface defects related to negative-bias temperature instability in ultrathin plasma-nitrided SiON/Si<1 0 0> systems
Pages : 57-64
Shinji Fujieda, Yoshinao Miura, Motofumi Saitoh, Yuden Teraoka and Akitaka Yoshigoe
Lien : vide.pdf - | Full Text + Links | PDF (333 K)
[9] : Positive charge generation due to species of hydrogen during NBTI phenomenon in pMOSFETs with ultra-thin SiON gate dielectrics
Pages : 65-69
Shimpei Tsujikawa and Jiro Yugami
Lien : vide.pdf - | Full Text + Links | PDF (323 K)
[10] : A comprehensive model of PMOS NBTI degradation
Pages : 71-81
M. A. Alam and S. Mahapatra
Lien : vide.pdf - | Full Text + Links | PDF (346 K)
[11] : A thorough investigation of MOSFETs NBTI degradation
Pages : 83-98
V. Huard, M. Denais, F. Perrier, N. Revil, C. Parthasarathy, A. Bravaix and E. Vincent
Lien : vide.pdf - | Full Text + Links | PDF (599 K)
[12] : Degradation dynamics, recovery, and characterization of negative bias temperature instability
Pages : 99-105
M. Ershov, S. Saxena, S. Minehane, P. Clifton, M. Redford, R. Lindley, H. Karbasi, S. Graves and S. Winters
Lien : vide.pdf - | Full Text + Links | PDF (365 K)
[13] : The impact of PMOST bias-temperature degradation on logic circuit reliability performance
Pages : 107-114
Yung-Huei Lee, Steve Jacobs, Stefan Stadler, Neal Mielke and Ramez Nachman
Lien : vide.pdf - | Full Text + Links | PDF (566 K)
[14] : Effects of electrical stressing in power VDMOSFETs
Pages : 115-122
N. Stojadinovic, I. Manic, V. Davidovic, D. Dankovic, S. Djoric-Veljkovic, S. Golubovic and S. Dimitrijev
Lien : vide.pdf - | Full Text + Links | PDF (443 K)
[15] : Effect of microwave radiation on the properties of Ta2O5–Si microstructures
Pages : 123-135
E. Atanassova, R. V. Konakova, V. F. Mitin, J. Koprinarova, O. S. Lytvym, O. B. Okhrimenko, V. V. Schinkarenko and D. Virovska
Lien : vide.pdf - | Full Text + Links | PDF (511 K)
[16] : Nanoscale structural characteristics and electron field emission properties of transition metal–fullerene compound TiC60 films
Pages : 137-142
J. Chen, J. B. Xu, K. Xue, J. An, N. Ke, W. Cao, H. B. Xia, J. Shi and D. C. Tian
Lien : vide.pdf - | Full Text + Links | PDF (389 K)
[17] : Effect of substrate flexibility on solder joint reliability. Part II: finite element modeling
Pages : 143-154
Y.C. Lin, X. Chen, Xingsheng Liu and Guo-Quan Lu
Lien : vide.pdf - | Full Text + Links | PDF (658 K)
[18] : Efficient parametric yield optimization of VLSI circuit by uniform design sampling method
Pages : 155-162
Ming-e Jing, Yue Hao, Jin-feng Zhang and Pei-jun Ma
Lien : vide.pdf - | Full Text + Links | PDF (622 K)
[19] : Test generation for technology-specific multi-faults based on detectable perturbations
Pages : 163-173
Andrej Zemva and Baldomir Zajc
Lien : vide.pdf - | Full Text + Links | PDF (397 K)
[20] : A function-fit model for the hard breakdown I-V characteristics of ultra-thin oxides in MOS structures
Pages : 175-178
E. Miranda and B. Brandala
Lien : vide.pdf - | Full Text + Links | PDF (302 K)
[21] : Determination of the dice forward I-V characteristics of a power diode from a packaged device and its applications
Pages : 179-184
Cher Ming Tan, Zhenghao Gan, Wai Fung Ho, Sam Chen and Robert Liu
Lien : vide.pdf - | Full Text + Links | PDF (409 K)
[22] : Improving the yield and reliability of the bulk-silicon HV-CMOS by adding a P-well
Pages : 185-190
Weifeng Sun and Longxing Shi
Lien : vide.pdf - | Full Text + Links | PDF (411 K)
[23] : Single resistance controlled oscillator using unity gain cells
Pages : 191-194
P.A. Martínez Martínez and B.M. Monge Sanz
Lien : vide.pdf - | Full Text + Links | PDF (267 K)
[24] : Analog IP blocks - BOOK REVIEW
Pages : 195-196
Mile Stojcev
Lien : vide.pdf - | Full Text + Links | PDF (210 K)
[25] : Layout-mixed-signal - BOOK REVIEW
Pages : 197-198
Mile Stojcev
Lien : vide.pdf - | Full Text + Links | PDF (212 K)
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