Revue : [REVUE479]

Titre : Elsevier Science, Microelectronics Journal, Volume 32, Issues 5-6, Pages 395-552, May-June 2001.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.

Volume : 32
Issues : 5-6
Pages : 395 - 552
Date : May - June 2001

[1] : Progress in power semiconductors, Page 395
Georges CharitatVitezslav BendaNinoslav Stojadinovic
Lien : vide.pdf - | Full Text + Links | PDF (38 K)

[2] : High-power robust semiconductor electronics technologies in the new millennium, Pages 397-408
K. Shenai
Lien : private/Shenai2.pdf - 404 Ko, 12 pages - | Full Text + Links | PDF (403 K)

  [1] :  [ART513]  K. SHENAI, High-power robust semiconductor electronics technologies in the new millennium, Microelectronics Journal, Vol. 32, No. 5-6, May 2001, pp. 397-408.

[3] : Integration of power devices in advanced mixed signal analog BiCMOS technology, Pages 409-418
T. R. Efland
Lien : vide.pdf - | Full Text + Links | PDF (420 K)

[4] : AlGaAs/GaAs heterojunction bipolar transistors for power applications: issues of thermal effect and reliability, Pages 419-431
J. J. Liou and C. I. Huang
Lien : vide.pdf - | Full Text + Links | PDF (543 K)

[5] : Physically based compact device models for circuit modelling applications,
Pages : 433-447
P. A. Mawby, P. M. Igic and M. S. Towers
Lien : vide.pdf - | Full Text + Links | PDF (963 K)

[6] : Local lifetime control by light ion irradiation: impact on blocking capability of power P–i–N diode, Pages 449-456
P. Hazdra, K. Brand, J. Rube and J. Vobecký
Lien : vide.pdf - | Full Text + Links | PDF (238 K)

[7] : Self-protection functions in direct light-triggered high-power thyristors, Pages : 457-461
F. -J. Niedernostheide, H. -J. Schulze and U. Kellner-Werdehausen
Lien : vide.pdf - | Full Text + Links | PDF (136 K)

[8] : Design, tests and applications of 3.3 kV asymmetrical thyristor, Pages 463-471
D. J. Chamund and N. Y. A. Shammas
Lien : vide.pdf - | Full Text + Links | PDF (344 K)

[9] : Improving the dynamic avalanche breakdown of high voltage planar devices using semi-resistive field plates, Pages 473-479
D. Dragomirescu and G. Charitat
Lien : vide.pdf - | Full Text + Links | PDF (229 K)

[10] : Radial confinement in lateral power devices, Pages 481-484
S. Krishnan, M. M. De Souza, E. M. S. Narayanan, M. Vellvehi, J. Roig, D. Flores, J. Rebollo and J. Millan
Lien : vide.pdf - | Full Text + Links | PDF (112 K)

[11] : Analytical modelling of electrical characteristics in -irradiated power VDMOS transistors, Pages 485-490
I. Mani, Z. Pavlovi, Z. Priji, V. Davidovi and N. Stojadinovi
Lien : vide.pdf - | Full Text + Links | PDF (139 K)

[12] : Power superjunction devices: an analytic model for breakdown voltage, Pages : 491-496
A. G. M. Strollo and E. Napoli
Lien : vide.pdf - | Full Text + Links | PDF (271 K)

[13] : Numerical analysis on the LDMOS with a double epi-layer and trench electrodes, Pages 497-502
I. -Y. Park, Y. -I. Choi, S. -K. Chung, H. -J. Lim, S. -I. Mo, J. -S. Choi and M. -K. Han
Lien : vide.pdf - | Full Text + Links | PDF (748 K)

[14] : SiC power DIMOS with double implanted Al/B P-well, Pages 503-507
P. Godignon, E. Morvan, X. Jordá, M. Vellvehi, D. Flores and J. Rebollo
Lien : vide.pdf - | Full Text + Links | PDF (159 K)

[15] : A new generation of power lateral and vertical floating islands MOS structures, Pages 509-516
F. Morancho, N. Cézac, A. Galadi, M. Zitouni, P. Rossel and A.
Peyre-Lavigne
Lien : vide.pdf - | Full Text + Links | PDF (286 K)

[16] : Silicon-on-insulator power integrated circuits, Pages 517-526
D. M. Garner, F. Udrea, H. T. Lim, G. Ensell, A. E. Popescu, K. Sheng and W. I. Milne
Lien : vide.pdf - | Full Text + Links | PDF (536 K)

[17] : Monolithic integration of a high-performance clustered insulated gate bipolar transistor with low-voltage components to form a 3 kV intelligent power chip, Pages 527-536
M. Sweet, C. K. Ngw, O. Spulber, J. V. L. Ngwendson, K. V. Vershinin, S. C. Bose, M. M. De Souza and E. M. S. Narayanan
Lien : vide.pdf - | Full Text + Links | PDF (451 K)

[18] : A monolithic IGBT gate driver for intelligent power modules implemented in 0.8 m high voltage (50 V) CMOS process, Pages 537-541
J. M. Park, E. D. Kim, S. C. Kim, N. K. Kim, W. Bahng, G. H. Song and S. B. Han
Lien : vide.pdf - | Full Text + Links | PDF (347 K)

[19] : New laser technology for wire bonding in power devices, Pages 543-546
F. Kostrubiec, Z. Lisik, R. Pawlak, K. Jakubowska and A. Korbicki
Lien : vide.pdf - | Full Text + Links | PDF (234 K)

[20] : PatentsALERT, Pages 547-552
PDF (83 K)

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