Revue : [REVUE417]

Titre : Elsevier Science, Microelectronics Reliability, Volume 43, Issue 4, Pages 517-684, April 2003.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.

Volume : 43
Issue : 4
Pages : 517 - 684
Date : April 2003

[1] : The quest for optimum technology of power semiconductor devices, Page 517
Vitezslav Benda
Lien : vide.pdf - | Full Text + Links | PDF (30 K)

[2] : Present problems of power module packaging technology, Pages 519-527
N. Y. A. Shammas
Lien : Shammas2.pdf - | Full Text + Links | PDF (262 K)

  [1] :  [ART415]  N. Y. A. SHAMMAS,  Present problems of power module packaging technology, Microelectronics Reliability, Volume 43, Issues 4, pp. 519-527.

[3] : Dynamic avalanche and reliability of high voltage diodes, Pages 529-536
Josef Lutz and Martin Domeij
Lien : vide.pdf - | Full Text + Links | PDF (223 K)

[4] : Impact of the electron, proton and helium irradiation on the forward I–V
characteristics of high-power P–i–N diode, Pages 537-544
J. Vobecký, P. Hazdra and V. Záhlava
Lien : vide.pdf - | Full Text + Links | PDF (218 K)

[5] : Study of internal behavior in a vertical DMOS transistor under short high
current stress by an interferometric mapping method, Pages 545-548
M. Blaho, D. Pogany, E. Gornik, M. Denison, G. Groos and M. Stecher
Lien : vide.pdf - | Full Text + Links | PDF (137 K)

[6] : Experimental study of charge generation mechanisms in power MOSFETs due to
energetic particle impact,, Pages 549-555
F. Velardi, F. Iannuzzo, G. Busatto, J. Wyss and A. Candelori
Lien : vide.pdf - | Full Text + Links | PDF (269 K)

[7] : Transient effects on high voltage diode stack under reverse bias, Pages
557-564
V. Pape, B. Kojecký, J. Koíek and J. Hejhal
Lien : vide.pdf - | Full Text + Links | PDF (178 K)

[8] : Study of aluminum thermomigration as a low thermal budget technique for
innovative power devices, Pages 565-569
B. Morillon, J. -M. Dilhac, C. Ganibal and C. Anceau
Lien : vide.pdf - | Full Text + Links | PDF (215 K)

[9] : Copper metallization influence on power MOS reliability, Pages 571-576
Adeline Feybesse, Ivana Deram, Jean-Michel Reynes and Eric Moreau
Lien : vide.pdf - | Full Text + Links | PDF (243 K)

[10] : MAGFET based current sensing for power integrated circuit, Pages 577-583
Giovanni Busatto, Roberto La Capruccia, Francesco Iannuzzo, Francesco
Velardi and Roberto Roncella
Lien : vide.pdf - | Full Text + Links | PDF (474 K)

[11] : Low-frequency noise study in electron devices: review and update, Pages
585-599
Hei Wong
Lien : vide.pdf - | Full Text + Links | PDF (247 K)

[12] : A simple four-terminal small-signal model of RF MOSFETs and its parameter
extraction, Pages 601-609
Minkyu Je, Jeonghu Han, Hyungcheol Shin and Kwyro Lee
Lien : vide.pdf - | Full Text + Links | PDF (220 K)

[13] : Oxynitride gate dielectric prepared by thermal oxidation of low-pressure
chemical vapor deposition silicon-rich silicon nitride, Pages 611-616
Jackie Chan, Hei Wong, M. C. Poon and C. W. Kok
Lien : vide.pdf - | Full Text + Links | PDF (260 K)

[14] : Characterisation of series resistance degradation through charge pumping
technique, Pages 617-624
S. K. Manhas, D. Chandra Sehkar, A. S. Oates and M. M. De Souza
Lien : vide.pdf - | Full Text + Links | PDF (303 K)

[15] : The effect of reflow process on the contact resistance and reliability of
anisotropic conductive film interconnection for flip chip on flex
applications, Pages 625-633
C. Y. Yin, M. O. Alam, Y. C. Chan, C. Bailey and Hua Lu
Lien : vide.pdf - | Full Text + Links | PDF (451 K)

[16] : Diffusion and absorption of corrosive gases in electronic encapsulants,
Pages : 635-643
C. Hillman, B. Castillo and M. Pecht
Lien : vide.pdf - | Full Text + Links | PDF (207 K)

[17] : Strength of Ta–Si interfaces by molecular dynamics, Pages 645-650
P. Heino and E. Ristolainen
Lien : vide.pdf - | Full Text + Links | PDF (119 K)

[18] : A reliable procedure for testing linear regulators with one-sided
specification limits based on multiple samples, Pages 651-664
W. L. Pearn and G. H. Lin
Lien : vide.pdf - | Full Text + Links | PDF (198 K)

[19] : Onefold coordinated oxygen atom: an electron trap in the silicon oxide,
Pages : 665-669
V. A. Gritsenko, A. V. Shaposhnikov, Yu. N. Novikov, A. P. Baraban, Hei
Wong, G. M. Zhidomirov and M. Roger
Lien : vide.pdf - | Full Text + Links | PDF (120 K)

[20] : Effects of hydrogenation on the performance and stability of p-channel
polycrystalline silicon thin-film transistors, Pages 671-674
N. A. Hastas, C. A. Dimitriadis, F. V. Farmakis and G. Kamarinos
Lien : vide.pdf - | Full Text + Links | PDF (110 K)

[21] : Electron transport in implant isolation GaAs layers, Pages 675-679
Z. Synowiec and B. Paszkiewicz
Lien : vide.pdf - | Full Text + Links | PDF (116 K)

[22] : Foldable Flex and Thinned Silicon Chips for Multichip Packaging; John
Balde (Ed.), Kluwer Academic Publishers, Boston, USA, December 2002.
Hardbound, 340 pp., Number of figures and tables 200, EURO 187.00/USD
185.00/GBP 120.00, ISBN 0-7923-7676-5, Pages 681-683
Johan Liu
Lien : vide.pdf - | Full Text + Links | PDF (60 K)

[23] : System Design with System C; Thorsten Grotker, Stan Liao, Grant Martin,
Stuart Swan. Kluwer Academic Publishers, Boston, 2002. Hardcover, pp. 217,
plus X, $110, ISBN 1-4020-7027-1, Pages 683-684
Mile Stojcev
Lien : vide.pdf - | Full Text + Links | PDF (37 K)

[24] : Calendar of forthcoming events, Pages I-IX
PDF (42 K)
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