Revue : [REVUE328]

Titre : Elsevier Science, Microelectronics Reliability, Volume 36, Issues 11-12, Pages 1603-1946 (12 November 1996.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.

Volume : 36, Issues 11-12,
Pages : 1603-1946 (12 November 1996)
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[1] : Relation between yield and reliability of integrated circuits and
application to failure rate assessment and reduction in the one digit fit
and PPM reliability era, Pages 1603-1610
Jacob A. Van der Pol, Fred G. Kuper and Eric R. Ooms
Lien : vide.pdf - | Journal Format-PDF (543 K)

[2] : AC effects in IC reliability, Pages 1611-1617
Hu Chenming
Lien : vide.pdf - | Journal Format-PDF (271 K)

[3] : Assessment of oxide charge density and centroid from Fowler-Nordheim
derivative characteristics in MOS structures after uniform gate stress,
Pages : 1619-1622
R. Kies, T. Egilsson, G. Ghibaudo and G. Pananakakis
Lien : vide.pdf - | Journal Format-PDF (205 K)

[4] : Investigation of trapped charge in oxides under Fowler-Nordheim stress
using low bias conditions, Pages 1623-1626
R. Duane, A. Martin, P. O'Donovan, P. Hurley, P. O'Sullivan and A.
Mathewson
Lien : vide.pdf - | Journal Format-PDF (229 K)

[5] : Threshold voltage degradation in plasma-damaged CMOS transistors - role of
electron and hole traps related to charging damage, Pages 1627-1630
Tomasz Broek, Y. David Chan and Chand R. Viswanathan
Lien : vide.pdf - | Journal Format-PDF (265 K)

[6] : Comprehensive gate-oxide reliability evaluation for dram processes, Pages
1631-1638
R. -P. Vollertsen and W. W. Abadeer
Lien : vide.pdf - | Journal Format-PDF (614 K)

[7] : A new analytic model for the description of the intrinsic oxide breakdown
statistics of ultra-thin oxides, Pages 1639-1642
R. Degraeve, PH. Roussel, G. Groeseneken and H. E. Maes
Lien : vide.pdf - | Journal Format-PDF (244 K)

[8] : Electric field dependence of TDDB activation energy in ultrathin oxides,
Pages : 1643-1646
E. Vincent, N. Revil, C. Papadas and G. Ghibaudo
Lien : vide.pdf - | Journal Format-PDF (227 K)

[9] : Enhancement of tbd of MOS gate oxides with a single-step pre-stress prior
to a CVS in the Fowler-Nordheim regime, Pages 1647-1650
A. Martin, T. Ribbrock, P. O'Sullivan and A. Mathewson
Lien : vide.pdf - | Journal Format-PDF (230 K)

[10] : A new statistical model for fitting bimodal oxide breakdown distributions
at different field conditions, Pages 1651-1654
R. Degraeve, Ph. Roussel, J. L. Ogier, G. Groeseneken and H. E. Maes
Lien : vide.pdf - | Journal Format-PDF (239 K)

[11] : A new physics-based model for time-dependent dielectric breakdown, Pages
1655-1658
B. J. Schlund, J. Suehle, C. Messick and P. Chaparala
Lien : vide.pdf - | Journal Format-PDF (224 K)

[12] : New experimental findings on hot carrier effects in deep submicrometer
surface channel PMOS, Pages 1659-1662
Tae Park Jong, Jun Jang Sung, Gun Yu Chong, Gook Park Byung and Duk Lee
Jong
Lien : vide.pdf - | Journal Format-PDF (199 K)

[13] : Hot-carrier reliability of N- and P-channel MOSFETS with polysilicon and
CVD tungsten-polycide gate, Pages 1663-1666
C. L. Lou, W. K. Chim, D. S. H. Chan and Y. Pan
Lien : vide.pdf - | Journal Format-PDF (226 K)

[14] : Comprehensive physical modeling of NMOSFET hot-carrier-induced
degradation, Pages 1667-1670
M. M. Lunenborg, H. C. De Graaff, A. J. Mouthaan and J. F. Verweij
Lien : vide.pdf - | Journal Format-PDF (218 K)

[15] : Relationship between profile of stress-generated interface traps and
degradation of submicron LDD MOSFET'S, Pages 1671-1674
S. Okhonin, T. Hessler and M. Dutoit
Lien : vide.pdf - | Journal Format-PDF (236 K)

[16] : Measurement and modeling of a new width dependence of NMOSFET degradation,
Pages : 1675-1678
F. Schuler, O. Kowarik and D. Keitel-Schulz
Lien : vide.pdf - | Journal Format-PDF (200 K)

[17] : The impact of oxide degradation on the low frequency (1/F) noise behaviour
of P channel MOSFETS, Pages 1679-1682
Paul K. Hurley, Eoin Sheehan, Stephen Moran and Alan Mathewson
Lien : vide.pdf - | Journal Format-PDF (290 K)

[18] : Designing circuits and processes to optimize performance and reliability:
metallurgy meets TCAD, Pages 1683-1690
C. V. Thompson and B. D. Knowlton
Lien : vide.pdf - | Journal Format-PDF (540 K)

[19] : Resistance changes due to Cu transport and precipitation during
electromigration in submicrometric Al-0.5% Cu lines, Pages 1691-1694
A. Scorzoni, I. De Munari, R. Balboni, F. Tamarri, A. Garulli and F.
Fantini
Lien : vide.pdf - | Journal Format-PDF (278 K)

[20] : A new technique to characterize the early stages of
electromigration-induced resistance changes at low current densities,
Pages : 1695-1698
V. D'Haeger, W. De Ceuninck, G. Knuyt, L. De Schepper and L. M. Stals
Lien : vide.pdf - | Journal Format-PDF (229 K)

[21] : Study of the microstructure of IC interconnect metallisations using
analytical transmission electron microscopy and secondary ion mass
spectrometry, Pages 1699-1702
P. Cosemans, M. D'olieslaeger, W. De Ceuninck, L. De Schepper and L. Stals
Lien : vide.pdf - | Journal Format-PDF (291 K)

[22] : Finite element investigations of mechanical stress in metallization
structures, Pages 1703-1706
K. Weide, X. Yu and F. Menhorn
Lien : vide.pdf - | Journal Format-PDF (188 K)

[23] : Study of the soft leakage current induced ESD on LDD transistor, Pages
1707-1710
Tetsuaki Wada
Lien : vide.pdf - | Journal Format-PDF (347 K)

[24] : Pulsed thermal characterization of a reverse biased PN-junction for ESD
HBM simulation, Pages 1711-1714
H. Wolf, H. Gieser and W. Wilkening
Lien : vide.pdf - | Journal Format-PDF (255 K)

[25] : Justifications for reducing HBM and MM ESD qualification test time, Pages
1715-1718
K. Verhaege, D. Robinson-Hahn, C. Russ, M. Farris, J. Scanlon, D. Lin, J.
Veltri and G. Groeseneken
Lien : vide.pdf - | Journal Format-PDF (275 K)

[26] : Reproducibility of field failures by ESD models - comparison of HBM,
socketed CDM and non-socketed CDM, Pages 1719-1722
T. Brodbeck, H. Bauch, X. Guggenmos and R. Wagner
Lien : vide.pdf - | Journal Format-PDF (333 K)

[27] : Influence of parasitic structures on the ESD performance of a pure bipolar
process, Pages 1723-1726
T. Nikolaïdis, C. Richier, M. Reffay, P. Mortini and G. Pananakakis
Lien : vide.pdf - | Journal Format-PDF (261 K)

[28] : ESD protection to overcome internal gate-oxide damage digital-analog
interface of mixed-mode CMOS IC's, Pages 1727-1730
Ker Ming-Dou and Yu Ta-Lee
Lien : vide.pdf - | Journal Format-PDF (232 K)

[29] : Efficient output ESD protection for 0.5-m high-speed CMOS SRAM IC with
well-coupled technique, Pages 1731-1734
Ker Ming-Dou and Wu Chau-Neng
Lien : vide.pdf - | Journal Format-PDF (253 K)

[30] : Turn-on speed of grounded gate NMOS ESD protection transistors, Pages
1735-1738
G. Meneghesso, J. R. M. Luchies, F. G. Kuper and A. J. Mouthaan
Lien : vide.pdf - | Journal Format-PDF (226 K)

[31] : Simulation study for the CDM ESD behaviour of the grounded-gate NMOS,
Pages : 1739-1742
C. Russ, K. Verhaege, K. Bock, G. Groeseneken and H. E. Maes
Lien : vide.pdf - | Journal Format-PDF (272 K)

[32] : Risetime effects of HBM and square pulses on the failure thresholds of
GGNMOS-transistors, Pages 1743-1746
C. Musshoff, H. Wolf, H. Gieser, P. Egger and X. Guggenmos
Lien : vide.pdf - | Journal Format-PDF (203 K)

[33] : Copper interconnection lines: SARF characterization and lifetime test,
Pages : 1747-1750
C. Ciofi, V. Dattilo and B. Neri
Lien : vide.pdf - | Journal Format-PDF (256 K)

[34] : Experimental validation of mechanical stress models by micro-raman
spectroscopy, Pages 1751-1754
I. De Wolf, G. Pozzat, K. Pinardi, D. J. Howard, M. Ignat, S. C. Jain and
H. E. Maes
Lien : vide.pdf - | Journal Format-PDF (254 K)

[35] : A new method to determine the influence of thermomechanical stress on the
reliability of metal lines in integrated circuits, Pages 1755-1758
A. v.Glasow, H. Kammer and A. Kohlhase
Lien : vide.pdf - | Journal Format-PDF (189 K)

[36] : A current self-limited protective device studied by LF-noise measurements,
Pages : 1759-1762
A. Modjtahedi, L. Lamaignere, F. Verdier, A. Touboul and F. Carmona
Lien : vide.pdf - | Journal Format-PDF (311 K)

[37] : Influence of the ferroelectric domain structure and switching properties
on the endurance of PZT ferroelectric capacitors, Pages 1763-1766
D. J. Wouters and H. E. Maes
Lien : vide.pdf - | Journal Format-PDF (230 K)

[38] : Nanoscopic evaluation of semiconductor properties by scanning probe
microscopies, Pages 1767-1774
L. J. Balk, R. Heiderhoff, P. Koschinski and M. Maywald
Lien : vide.pdf - | Journal Format-PDF (932 K)

[39] : The application of advanced techniques for complex focused-ion-beam device
modification, Pages 1775-1778
M. T. Abramo and L. L. Hahn
Lien : vide.pdf - | Journal Format-PDF (363 K)

[40] : A comparison of focused ion beam and electron beam induced deposition
processes, Pages 1779-1782
S. Lipp, L. Frey, C. Lehrer, E. Demm, S. Pauthner and H. Ryssel
Lien : vide.pdf - | Journal Format-PDF (223 K)

[41] : Oxide breakdown decrease by oxide growth projection of implantation-caused
stacking faults - a characterization case study using atomic force
microscopy, Pages 1783-1786
P. Jacob and K. Hoeppner
Lien : vide.pdf - | Journal Format-PDF (305 K)

[42] : Reliability of a focused ion beam repair on digital CMOS circuits, Pages
1787-1790
R. Van Camp, K. Van Doorselaer and I. Clemminck
Lien : vide.pdf - | Journal Format-PDF (228 K)

[43] : Soldered joints on leaded components: development of a design tool to
predict failure during temperature cycle tests, Pages 1791-1797
P. M. M. Wolbert and A. C. Brombacher
Lien : vide.pdf - | Journal Format-PDF (294 K)

[44] : Examination of reflow resistance for copper frame SMD products, Pages
1799-1802
T. Setoya, T. Matsuura, K. Furuta, Y. Terui, Y. Soekawa, S. Koike and Y.
Kishimura
Lien : vide.pdf - | Journal Format-PDF (295 K)

[45] : Characterisation of chip-on-board and flip chip packaging technologies by
acoustic microscopy, Pages 1803-1806
W. Lawton and J. Barrett
Lien : vide.pdf - | Journal Format-PDF (350 K)

[46] : Evaluation of structural degradation in packaged semiconductor components
using a transient thermal characterisation technique, Pages 1807-1810
F. Christiaens, B. Vandevelde, E. Beyne and J. Roggen
Lien : vide.pdf - | Journal Format-PDF (322 K)

[47] : A practical system for hot spot detection using fluorescent microthermal
imaging, Pages 1811-1814
J-Y. Glacet and S. Berne
Lien : vide.pdf - | Journal Format-PDF (310 K)

[48] : Improved critical area prediction by application of pattern recognition
techniques, Pages 1815-1818
J. H. N. Mattick, R. W. Kelsall and R. E. Miles
Lien : vide.pdf - | Journal Format-PDF (317 K)

[49] : The influence of process variations on the robustness of an audio power
IC, Pages 1819-1822
Benno Krabbenborg and Jacob Van Der Pol
Lien : vide.pdf - | Journal Format-PDF (208 K)

[50] : Method for precise determination of the statistical distribution of the
input offset voltage of differential stages, Pages 1823-1826
R. Thewes, T. Schindhelm, M. Tiebout, E. Wohlrab, U. Kollmer, S. Kessel,
D. Schmitt-Landsiedel and W. Weber
Lien : vide.pdf - | Journal Format-PDF (307 K)

[51] : Reliability improvement of single-poly quasi self-aligned BiCMOS BJTS
using base surface arsenic compensation, Pages 1827-1830
L. Vendrame, T. Gravier, J. Kirtsch, A. Monroy and A. Chantre
Lien : vide.pdf - | Journal Format-PDF (272 K)

[52] : Validation of yield models with CMOS/SOS test structures, Pages 1831-1834
V. Riviere, A. Touboul, S. Ben Amor and G. Gregoris
Lien : vide.pdf - | Journal Format-PDF (261 K)

[53] : Quality and reliability improvement through defect oriented failure
analysis, Pages 1835-1838
P. De Pauw and S. Van Haeverbeke
Lien : vide.pdf - | Journal Format-PDF (306 K)

[54] : Wafer level reliability: process control for reliability, Pages 1839-1846
Timothy E. Turner
Lien : vide.pdf - | Journal Format-PDF (513 K)

[55] : The isocurrent test: 3 promising tool for wafer-level evaluation of the
interconnect reliability, Pages 1847-1850
A. Witvrouw, S. Van Dooren, D. Wouters, M. Van Dievel and K. Maex
Lien : vide.pdf - | Journal Format-PDF (237 K)

[56] : Wafer level measurement system for SARF characterization of metal lines,
Pages : 1851-1854
C. Ciofi, M. De Marinis and B. Neri
Lien : vide.pdf - | Journal Format-PDF (226 K)

[57] : A new wafer level reliability method for evaluation of ionic induced
pmosfet drift effects, Pages 1855-1858
A. Dreizner, J. Nagel and R. Scharfe
Lien : vide.pdf - | Journal Format-PDF (207 K)

[58] : A wafer level reliability method for short-loop processing, Pages
1859-1862
J. B. Duluc, T. Zimmer, N. Milet and J. P. Dom
Lien : vide.pdf - | Journal Format-PDF (214 K)

[59] : Reliability indicators for lift-off of bond wires in IGBT power-modules,
Pages : 1863-1866
B. Farokhzad, P. Türkes, E. Wolfgang and K. Goser
Lien : vide.pdf - | Journal Format-PDF (251 K)

[60] : Effects of metallization lay-out on turn-off failure of modern power
bipolar transistors, Pages 1867-1870
G. Busatto, A. Conte and A. Patti
Lien : vide.pdf - | Journal Format-PDF (278 K)

[61] : SEGR: A unique failure mode for power MOSFETs in spacecraft, Pages
1871-1874
M. Allenspach, J. R. Brews, K. F. Galloway, G. H. Johnson, R. D. Schrimpf,
R. L. Pease, J. L. Titus and C. F. Wheatley
Lien : vide.pdf - | Journal Format-PDF (254 K)

[62] : Design of a test structure to evaluate electro-thermomigration in power
ICs, Pages 1875-1878
I. De Munari, F. Speroni, M. Reverberi, C. Neva, L. Lonzi and F. Fantini
Lien : vide.pdf - | Journal Format-PDF (223 K)

[63] : The GaAs heterojunction bipolar transistor: an electron device with
optical device reliability, Pages 1879-1886
T. S. Henderson
Lien : vide.pdf - | Journal Format-PDF (504 K)

[64] : Simulation of the gate burnout of GaAs MESFET, Pages 1887-1890
V. A. Vashchenko, J. B. Martynov, V. F. Sinkevitch and A. S. Tager
Lien : vide.pdf - | Journal Format-PDF (256 K)

[65] : Characterisation of reliability of compound semiconductor devices using
electrical pulses, Pages 1891-1894
M. Brandt, V. Krozer, M. Schüler, K. -H. Bock and H. -L. Hartnagel
Lien : vide.pdf - | Journal Format-PDF (355 K)

[66] : Drain current DLTS analysis of recoverable and permanent degradation
effects in AlGaAs/GaAs and AlGaAs/InGaAs HEMT's, Pages 1895-1898
G. Meneghesso, Y. Haddab, N. Perrino, C. Canali and E. Zanoni
Lien : vide.pdf - | Journal Format-PDF (242 K)

[67] : The effect of hot electron stress on the DC and microwave characteristics
of AlGaAs/InGaAs/GaAs PHEMT's, Pages 1899-1902
R. Menozzi, M. Borgarino, P. Cova, Y. Baeyens and F. Fantini
Lien : vide.pdf - | Journal Format-PDF (218 K)

[68] : Analysis of the surface base current drift in GaAs HBT's, Pages 1903-1906
C. Maneux, N. Labat, N. Saysset, A. Touboul, Y. Danto, J. Dangla, P.
Launay and J. -M. Dumas
Lien : vide.pdf - | Journal Format-PDF (242 K)

[69] : Pulsed stress reliability investigations of Schottky diodes and HBTS,
Pages : 1907-1910
M. Schüler, V. Krozer, K. H. Bock, M. Brandt, L. Vecci, R. Losi and H. L.
Hartnagel
Lien : vide.pdf - | Journal Format-PDF (264 K)

[70] : DC, LF Dispersion and HF characterisation of short-time stressed InP based
LM-HEMTS, Pages 1911-1914
D. Schreurs, A. Spiers, W. De Raedt, K. Van Der Zanden, Y. Baeyens, M. Van
Hove, B. Nauwelaers and M. Van Rossum
Lien : vide.pdf - | Journal Format-PDF (274 K)

[71] : Reliability and degradation behaviors of semi-insulating Fe-doped InP
buried heterostructure lasers fabricated by MOVPE and dry etching
technique, Pages 1915-1918
Hiroyasu Mawatari, Mitsuo Fukuda, Shin-Ichi Matsumoto, Kenji Kishi and
Yoshio Itaya
Lien : vide.pdf - | Journal Format-PDF (206 K)

[72] : Study on the reliability of an InP/InGaAsP integrated laser modulator,
Pages : 1919-1922
V. Hornung, F. Le Du, C. Starck, G. Gelly, C. Crusson, D. Laffitte, J. F.
Vinchant and D. Lesterlin
Lien : vide.pdf - | Journal Format-PDF (250 K)

[73] : Automotive and aerospace electronic systems. Dependability requirements,
Pages : 1923-1929
P. D. Rose
Lien : vide.pdf - | Journal Format-PDF (441 K)

[74] : In-situ monitoring of dry corrosion degradation of Au ball bonds to Al
bond pads in plastic packages during HTSL, Pages 1931-1934
F. W. Ragay, J. A. v.d. Pol and J. Naderman
Lien : vide.pdf - | Journal Format-PDF (161 K)

[75] : Question marks to the extrapolation to lower temperatures in high
temperature storage life (HTSL) testing in plastic encapsulated IC's,
Pages : 1935-1938
W. Schuddeboom and M. Wübbenhorst
Lien : vide.pdf - | Journal Format-PDF (237 K)

[76] : MicroDAC - a novel approach to measure in situ deformation fields of
microscopic scale, Pages 1939-1942
D. Vogel, A. Schubert, W. Faust, R. Dudek and B. Michel
Lien : vide.pdf - | Journal Format-PDF (329 K)

[77] : Introduction of plastic encapsulated devices in systems operating under
severe temperature conditions, Pages 1943-1946
R. Hernandez, O. Le Peuch, B. Parmentier and R. Vial
Lien : vide.pdf - | Journal Format-PDF (273 K)

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