Revue : [REVUE305]

Titre : Elsevier Science, Microelectronics Reliability, Volume 38, Issue 9, Pages 1367-1512 (September 1998.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.

Volume : 38, Issue 9,
Pages : 1367-1512 (September 1998)
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[1] : Editorial, Pages 1367-1368
Lien : vide.pdf - Format-PDF (82 K)

[2] : Current status of failure analysis for ULSIs© 1997 IEEE. Reprinted with
permission, from Proc. 1997 21st International Conference on
Microelectronics, Nis, Yugoslavia, 14¯17 September 1997, Vol. 2, pp.
591¯598., Pages 1369-1377
S. Nakajima, T. Ueki, Y. Shionoya, K. Mafune, N. Kuji, S. Nakamura, Y.
Komine and T. Takeda
Lien : vide.pdf - | Article | Journal Format-PDF (1015 K)

[3] : Basics and applications of charge pumping in submicron MOSFETs© 1997 IEEE.
Reprinted, with permission, from Proc. 1997 21st International Conference
on Microelectronics, Nis, Yugoslavia, 14¯17 September 1997, Vol. 2, pp.
581¯589., Pages 1379-1389
Guido Groeseneken and Herman E. Maes
Lien : vide.pdf - | Article | Journal Format-PDF (479 K)

[4] : A phenomenon of charge trapping saturation induced by rapid thermal
annealing, Pages 1391-1399
Shyh-Chyi Wong, Ming-Shian Huang, Cherng-Yuan Sun and Lu-Min Lu
Lien : vide.pdf - | Article | Journal Format-PDF (470 K)

[5] : Comparison of latchup immunity for silicided source/drain at different n+
implant energy, Pages 1401-1405
Kam-Chew Leong, Po-Ching Liu, Kiat Seng Yeo, Chock-Hing Gan, Gang Qian,
Yong-Meng Lee and Lap Chan
Lien : vide.pdf - | Article | Journal Format-PDF (799 K)

[6] : Suppression of hot-electron-induced interface degradation in
metal-oxide-semiconductor devices by backsurface argon bombardment, Pages
1407-1411
M. Q. Huang, P. T. Lai, J. P. Xu, S. H. Zeng, G. Q. Li and Y. C. Cheng
Lien : vide.pdf - | Article | Journal Format-PDF (194 K)

[7] : Application of direct-tunneling gate oxides to high-performance CMOS,
Pages : 1413-1423
Hisayo Sasaki Momose, Shin-ichi Nakamura, Yasuhiro Katsumata and Hiroshi
Iwai
Lien : vide.pdf - | Article | Journal Format-PDF (1011 K)

[8] : Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET,
Pages : 1425-1431
L. Huang, P. T. Lai, J. P. Xu and Y. C. Cheng
Lien : vide.pdf - | Article | Journal Format-PDF (296 K)

[9] : Study of MOS gate dielectric breakdown due to drain avalanche breakdown,
Pages : 1433-1438
H. Wong and M. C. Poon
Lien : vide.pdf - | Article | Journal Format-PDF (269 K)

[10] : Evaluation of the dielectric breakdown of reoxidized nitrided oxide (ONO)
in flash memory devices using constant current-stressing technique, Pages
1439-1446
C. L. Cha, E. F. Chor, H. Gong, A. Q. Zhang, L. Chan and J. Xie
Lien : vide.pdf - | Article | Journal Format-PDF (702 K)

[11] : Discrete random dopant distribution effects in nanometer-scale MOSFETs,
Pages : 1447-1456
Hon-Sum Philip Wong, Yuan Taur and David J. Frank
Lien : vide.pdf - | Article | Journal Format-PDF (930 K)

[12] : Simulation of electronic structure of Si¯Si bond traps in
oxide/nitride/oxide structure, Pages 1457-1464
V. A. Gritsenko, Yu. N. Novikov, Yu. N. Morokov and H. Wong
Lien : vide.pdf - | Article | Journal Format-PDF (383 K)

[13] : A new threshold voltage model for deep-submicron MOSFETs with nonuniform
substrate dopings, Pages 1465-1469
Wen-liang Zhang and Zhi-lian Yang
Lien : vide.pdf - | Article | Journal Format-PDF (266 K)

[14] : Sub-quarter micron silicon integrated circuits and single wafer
processing, Pages 1471-1483
R. Singh
Lien : vide.pdf - | Article | Journal Format-PDF (763 K)

[15] : Plasma doping for ultra-shallow junctions, Pages 1485-1488
Chung Chan and Shu Qin
Lien : vide.pdf - | Article | Journal Format-PDF (234 K)

[16] : n+/p ultra-shallow junction formation with plasma immersion ion
implantation, Pages 1489-1494
B. L. Yang, Erin C. Jones, Nathan W. Cheung, Jiqun Shao, H. Wong and Y. C.
Cheng
Lien : vide.pdf - | Article | Journal Format-PDF (670 K)

[17] : Thermal stability of cobalt and nickel silicides, Pages 1495-1498
M. C. Poon, C. H. Ho, F. Deng, S. S. Lau and H. Wong
Lien : vide.pdf - | Article | Journal Format-PDF (193 K)

[18] : Stability of NiSi in boron-doped polysilicon lines, Pages 1499-1502
M. C. Poon, M. Chan, W. Q. Zhang, F. Deng and S. S. Lau
Lien : vide.pdf - | Article | Journal Format-PDF (192 K)

[19] : A study of tilt angle effect on Halo PMOS performance, Pages 1503-1512
Jiong-Guang Su, Shyh-Chyi Wong and Chi-Tsung Huang
Lien : vide.pdf - | Article | Journal Format-PDF (1564 K)

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