DATA : [REVUE217]

Titre : Elsevier Science, Microelectronics Reliability, Volume 41, Issue 3, Pages 333-480, March 2001.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.

Volume : 41
Issue : 3
Pages : 333 - 480
Date : March 2001

[1] : Editorial, Page 333
Koen G. Verhaege
SummaryPlus | Article | Journal Format-PDF (22 K)

[2] : A strategy for characterization and evaluation of ESD robustness of CMOS
semiconductor technologies, Pages 335-348
S. Voldman, W. Anderson, R. Ashton, M. Chaine, C. Duvvury, T. Maloney and
E. Worley
SummaryPlus | Article | Journal Format-PDF (623 K)

[3] : An anti-snapback circuit technique for inhibiting parasitic bipolar
conduction during EOS/ESD events, Pages 349-357
Jeremy C. Smith
SummaryPlus | Article | Journal Format-PDF (765 K)

[4] : Stacked PMOS clamps for high voltage power supply protection, Pages
359-366
Timothy J. Maloney and Wilson Kan
SummaryPlus | Article | Journal Format-PDF (199 K)

[5] : Reliability considerations for ESD protection under wire bonding pads,
Pages : 367-373
Warren R. Anderson, William M. Gonzalez, Sheera S. Knecht and Wendy Fowler
SummaryPlus | Article | Journal Format-PDF (544 K)

[6] : Influence of gate length on ESD-performance for deep submicron CMOS
technology, Pages 375-383
K. Bock, B. Keppens, V. De Heyn, G. Groeseneken, L. Y. Ching and A. Naem
SummaryPlus | Article | Journal Format-PDF (666 K)

[7] : Wide range control of the sustaining voltage of electrostatic discharge protection elements realized in a smart power echnology
Pages : 385-393
H. Goßner, T. Müller-Lynch, K. Esmark and M. Stecher

  [1] :  [PAP300]  H. Goßner, T. Müller-Lynch, K. Esmark, M. Stecher, Wide range control of the sustaining voltage of electrostatic discharge protection elements realized in a smart power technology, pp. 385-393.

[8] : Investigations on double-diffused MOS transistors under ESD zap
conditions, Pages 395-405
Gianluca Boselli, Stan Meeuwsen, Ton Mouthaan and Fred Kuper
SummaryPlus | Article | Journal Format-PDF (777 K)

[9] : Issues concerning charged device model ESD verification modules - the need
to move to alumina, Pages 407-415
L. G. Henry, M. A. Kelly, T. Diep and J. Barth
SummaryPlus | Article | Journal Format-PDF (381 K)

[10] : Hardware/firmware co-design in an 8-bits microcontroller to solve the
system-level ESD issue on keyboard, Pages 417-429
Ming-Dou Ker and Yu-Yu Sung
SummaryPlus | Article | Journal Format-PDF (1166 K)

[11] : Transport and noise properties of CdTe(Cl) crystals, Pages 431-436
P. Schauer, J. Sikula and P. Moravec
SummaryPlus | Article | Journal Format-PDF (151 K)

[12] : A new degradation model and lifetime extrapolation technique for lightly
doped drain nMOSFETs under hot-carrier degradation, Pages 437-443
R. Dreesen, K. Croes, J. Manca, W. De Ceuninck, L. De Schepper, A. Pergoot
and G. Groeseneken
SummaryPlus | Article | Journal Format-PDF (617 K)

[13] : Modeling bimodal electromigration failure distributions, Pages 445-453
A. H. Fischer, A. Abel, M. Lepper, A. E. Zitzelsberger and A. von Glasow
Lien : vide.pdf - | Journal Format-PDF (918 K)

[14] : An in-line process monitoring method using electron beam induced substrate
current, Pages 455-459
Keizo Yamada, Toyokazu Nakamura and Tohru Tsujide
SummaryPlus | Article | Journal Format-PDF (195 K)

[15] : Improved reliability in small multichip ball grid arrays, Pages 461-469
Thomas D. Moore and John L. Jarvis
SummaryPlus | Article | Journal Format-PDF (660 K)

[16] : Testing and improvement of micro-optical-switch dynamics, Pages 471-480
Christian Rembe, Harald Aschemann, Stefan aus der Wiesche, Eberhard P.
Hofer, Hélèn Debéda, Jürgen Mohr and Ulrike Wallrabe
Lien : vide.pdf - | Journal Format-PDF (486 K)

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