Revue : [REVUE165]

Titre : Elsevier Science, Microelectronics Reliability, Volume 40, Issues 4-5, Pages 555-895, 1 April 2000.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.

Volume : 40
Issues : 4-5
Pages : 555 - 895
Date : 1 April 2000

[1] : , Page 555
Blas Garrido and Joan Ramon Morante
Lien : vide.pdf - | Article | Journal Format-PDF (38 K)

[2] : The relentless march of the MOSFET gate oxide thickness to zero, Pages
557-562
G. Timp, J. Bude, F. Baumann, K. K. Bourdelle, T. Boone, J. Garno, A.
Ghetti, M. Green, H. Gossmann, Y. Kim et al.
Lien : vide.pdf - | Article | Journal Format-PDF (1013 K)

[3] : Ultra-thin SiO2 film studies: index, thickness, roughness and the initial
oxidation regime, Pages 563-565
Eugene A. Irene
Lien : vide.pdf - | Article | Journal Format-PDF (53 K)

[4] : The roles of charged and neutral oxidising species in silicon oxidation
from ab initio calculations, Pages 567-570
M. A. Szymanski, A. M. Stoneham and A. Shluger
Lien : vide.pdf - | Article | Journal Format-PDF (162 K)

[5] : Capacitance¯Voltage (C¯V) characterization of 20 Å thick gate oxide:
parameter extraction and modeling, Pages 571-575
R. Clerc, T. Devoivre, G. Ghibaudo, C. Caillat, G. Guégan, G. Reimbold and
G. Pananakakis
Lien : vide.pdf - | Article | Journal Format-PDF (185 K)

[6] : Atomically smooth ultrathin oxide on Si(1 1 3), Pages 577-579
H. -J. Müssig, J. Dbrowski and S. Hinrich
Lien : vide.pdf - | Article | Journal Format-PDF (294 K)

[7] : Internal photoemission in the MOS system at low electric fields in the
dielectric. Model and applications, Pages 581-584
H. M. Przewlocki
Lien : vide.pdf - | Article | Journal Format-PDF (358 K)

[8] : Calculation of direct tunneling gate current through ultra-thin oxide and
oxide/nitride stacks in MOSFETs and H-MOSFETs, Pages 585-588
E. Cassan, P. Dollfus, S. Galdin and P. Hesto
Lien : vide.pdf - | Article | Journal Format-PDF (141 K)

[9] : Determination of the electrical properties of thermally grown ultrathin
nitride films, Pages 589-592
N. Pic, A. Glachant, S. Nitsche, J. Y. Hoarau, D. Goguenheim, D.
Vuillaume, A. Sibai and C. Chanelière
Lien : vide.pdf - | Article | Journal Format-PDF (335 K)

[10] : Reduction of the parasitic charge generation during silicon nitride
deposition in a LOCOS isolation without field implant, Pages 593-596
J. L. Fay, J. Beluch, B. Despax, M. Bafleur and G. Sarrabayrouse
Lien : vide.pdf - | Article | Journal Format-PDF (137 K)

[11] : Relation between residual stress and electrical properties of
polysilicon/oxide/silicon structures, Pages 597-600
L. Jalabert, P. Temple-Boyer, F. Olivié, G. Sarrabayrouse, F. Cristiano
and B. Colombeau
Lien : vide.pdf - | Article | Journal Format-PDF (167 K)

[12] : Flicker noise spectroscopy ¯ a new method of studying non-stationary
effects in electrical conductivity of oxides, Pages 601-604
V. Parkhutik, S. Timashev, A. Nadal, C. Ferrer, Ye. Budnikov and F.
Colomina
Lien : vide.pdf - | Article | Journal Format-PDF (143 K)

[13] : Influence of interfaces on electrical characteristics formation in
monocrystalline silicon¯noncrystalline ultrathin oxide ¯ polycrystalline
silicon structures, Pages 605-608
V. Ya. Uritsky and A. P. Krylov
Lien : vide.pdf - | Article | Journal Format-PDF (90 K)

[14] : Accurate determination of composition and bonding probabilities in plasma
enhanced chemical vapour deposition amorphous silicon oxide, Pages 609-612
J. A. Moreno, B. Garrido and J. Samitier
Lien : vide.pdf - | Article | Journal Format-PDF (74 K)

[15] : Annealing effects in the PECVD SiO2 thin films deposited using TEOS, Ar
and O2 mixture, Pages 613-616
C. E. Viana, N. I. Morimoto and O. Bonnaud
Lien : vide.pdf - | Article | Journal Format-PDF (157 K)

[16] : Optical characterization of dielectric borophosphosilicate glass, Pages
617-620
Mariuca Gartner, M. Modreanu, S. Bosch and T. Stoica
Lien : vide.pdf - | Article | Journal Format-PDF (275 K)

[17] : Tetraethylorthosilicate SiO2 films deposited at a low temperature, Pages
621-624
A. N. R. da Silva, N. I. Morimoto and O. Bonnaud
Lien : vide.pdf - | Article | Journal Format-PDF (188 K)

[18] : Plasma damage in thin gate MOS dielectrics and its effect on device
characteristics and reliability, Pages 625-631
Tomasz Broek, John Huber and James Walls
Lien : vide.pdf - | Article | Journal Format-PDF (405 K)

[19] : Suppression of boron penetration through thin gate oxides by nitrogen
implantation into the gate electrode of PMOS devices, Pages 633-636
M. Herden, A. J. Bauer and H. Ryssel
Lien : vide.pdf - | Article | Journal Format-PDF (186 K)

[20] : Boron penetration effect on gate oxide reliability of 50 Å PMOS devices,
Pages : 637-640
Carl Kyono, Tomasz Broek and Vida Ilderem
Lien : vide.pdf - | Article | Journal Format-PDF (210 K)

[21] : Electrical characterisation of oxides grown in different RTP ambients,
Pages : 641-644
D. Brazzelli, G. Ghidini, B. Crivelli, R. Zonca, M. Bersani, G. C. Xing,
G. E. Miner, N. D'Astici, S. Kuppurao and D. Lopes
Lien : vide.pdf - | Article | Journal Format-PDF (266 K)

[22] : Interface properties of the Si(1 0 0)¯SiO2 system formed by rapid thermal
oxidation, Pages 645-648
B. J. O'Sullivan, P. K. Hurley, A. Mathewson, J. H. Das and A. D. Daniel
Lien : vide.pdf - | Journal Format-PDF (127 K)

[23] : Low temperature photoformation of tantalum oxide, Pages 649-655
Ian W. Boyd and Jun-Ying Zhang
Lien : vide.pdf - | Article | Journal Format-PDF (271 K)

[24] : Characteristics of MIS capacitors based on multilayer TiO2¯Ta2O5
structures, Pages 657-658
V. Mikhelashvili and G. Eisenstein
Lien : vide.pdf - | Article | Journal Format-PDF (99 K)

[25] : Electrical characteristics of anodic tantalum pentoxide thin films under
thermal stress, Pages 659-662
S. Dueñas, H. Castán, J. Barbolla, R. R. Kola and P. A. Sullivan
Lien : vide.pdf - | Article | Journal Format-PDF (142 K)

[26] : Characterization of NH3 plasma-treated Ba0.7Sr0.3TiO3 thin films, Pages
663-666
D. S. Wuu, R. H. Horng, F. C. Liao, C. C. Leu, T. Y. Huang, S. M. Sze, H.
Y. Chen and C. Y. Chang
Lien : vide.pdf - | Article | Journal Format-PDF (372 K)

[27] : Effects of fluorine-implanted treatment on Ba0.7Sr0.3TiO3 films, Pages
667-670
R. H. Horng, D. S. Wuu, C. C. Leu, S. H. Chan, T. Y. Huang and S. M. Sze
Lien : vide.pdf - | Article | Journal Format-PDF (160 K)

[28] : Epitaxial ferroelectric PbZrxTi1¯xO3 thin films for non-volatile memory
applications, Pages 671-674
C. Guerrero, C. Ferrater, J. Roldán, V. Trtík, F. Sánchez and M. Varela
Lien : vide.pdf - | Article | Journal Format-PDF (161 K)

[29] : Electrical characterization of low permittivity materials for ULSI
inter-metal-insulation, Pages 675-678
J. Cluzel, F. Mondon, Y. Loquet, Y. Morand and G. Reimbold
Lien : vide.pdf - | Article | Journal Format-PDF (255 K)

[30] : Effects of O2 plasma treatment on the electric and dielectric
characteristics of Ba0.7Sr0.3TiO3 thin films, Pages 679-682
Ching-Chich Leu, Shih-Hsiung Chan, Haur-Ywh Chen, Ray-Hua Horng, Dong-Sing
Wuu, Luh-Huei Wu, Tiao-Yuan Huang, Chun-Yen Chang and Simon Min Sze
Lien : vide.pdf - | Article | Journal Format-PDF (199 K)

[31] : A new MOD method to prepare Sr0.7Bi2.2Ta2O9 ferroelectric films for
non-volatile RAM memories, Pages 683-686
P. Tejedor, A. B. Fernández, R. Jiménez, C. Alemany and J. Mendiola
Lien : vide.pdf - | Article | Journal Format-PDF (146 K)

[32] : Conduction properties of breakdown paths in ultrathin gate oxides, Pages
687-690
E. Miranda, J. Suñé, R. Rodríguez, M. Nafría and X. Aymerich
Lien : vide.pdf - | Article | Journal Format-PDF (160 K)

[33] : Wet or dry ultrathin oxides: impact on gate oxide and device reliability,
Pages : 691-695
S. Bruyère, F. Guyader, W. De Coster, E. Vincent, M. Saadeddine, N. Revil
and G. Ghibaudo
Lien : vide.pdf - | Article | Journal Format-PDF (188 K)

[34] : Ultra-thin oxide reliability: searching for the thickness scaling limit,
Pages : 697-701
R. Degraeve, B. Kaczer and G. Groeseneken
Lien : vide.pdf - | Article | Journal Format-PDF (326 K)

[35] : A recombination model for transient and stationary stress-induced leakage
current, Pages 703-706
D. Ielmini, A. S. Spinelli, A. L. Lacaita, A. Martinelli and G. Ghidini
Lien : vide.pdf - | Article | Journal Format-PDF (204 K)

[36] : Relation between defect generation, stress induced leakage current and
soft breakdown in thin (<5 nm) oxides, Pages 707-710
R. Rodríguez, E. Miranda, R. Pau, J. Suñé, M. Nafría and X. Aymerich
Lien : vide.pdf - | Article | Journal Format-PDF (153 K)

[37] : On stress induced leakage current in 5 and 3 nm thick oxides, Pages
711-714
A. Meinertzhagen, D. Zander, C. Petit, M. Jourdain and D. Gogenheim
Lien : vide.pdf - | Article | Journal Format-PDF (157 K)

[38] : Time decay of stress induced leakage current in thin gate oxides by
low-field electron injection, Pages 715-718
A. Cester, A. Paccagnella and G. Ghidini
Lien : vide.pdf - | Article | Journal Format-PDF (118 K)

[39] : Cell array structure test in EEPROM reliability assessment at an early
process development stage, Pages 719-722
F. Pio and E. Gomiero
Lien : vide.pdf - | Article | Journal Format-PDF (324 K)

[40] : Reliability of ultra-thin N2O-nitrided oxides grown by RTP under low
pressure and in different gas atmospheres, Pages 723-726
M. Beichele, A. J. Bauer and H. Ryssel
Lien : vide.pdf - | Article | Journal Format-PDF (200 K)

[41] : Channel distribution of generated interface states in 0.35 m LDD nMOSFET,
Pages : 727-730
O. Buiu, I. S. Al-Kofahi, S. Taylor and J. Ellis
Lien : vide.pdf - | Article | Journal Format-PDF (110 K)

[42] : Assessing oxide reliability targets with fast WLR measurements, Pages
731-734
Andreas Martin, Martin Kerber and Andreas Preussger
Lien : vide.pdf - | Article | Journal Format-PDF (209 K)

[43] : Effect of oxide¯semiconductor interface traps on low-temperature operation
of MOSFETs, Pages 735-738
V. S. Lysenko, I. P. Tyagulski, Y. V. Gomeniuk and I. N. Osiyuk
Lien : vide.pdf - | Article | Journal Format-PDF (144 K)

[44] : On the initial temporal current characteristics of thin oxide devices
depending on constant voltage pulse sequences, Pages 739-742
J. -W. Zahlmann-Nowitzki, L. Nebrich, M. Wiatr and P. Seegebrecht
Lien : vide.pdf - | Article | Journal Format-PDF (185 K)

[45] : Hot-carrier reliability in deep-submicrometer LATID NMOSFETs, Pages
743-746
J. M. Rafí and F. Campabadal
Lien : vide.pdf - | Article | Journal Format-PDF (191 K)

[46] : The effect of stress polarity on positive charging in thin gate oxide,
Pages : 747-750
P. Bellutti, L. Eccel and N. Zorzi
Lien : vide.pdf - | Article | Journal Format-PDF (88 K)

[47] : Comparison of oxide leakage currents induced by ion implantation and high
field electric stress, Pages 751-754
D. Goguenheim, A. Bravaix, J. M. Moragues, P. Lambert and P. Boivin
Lien : vide.pdf - | Article | Journal Format-PDF (233 K)

[48] : Reversible and irreversible interface trap centres generated at high
electric fields in MOS structures, Pages 755-758
C. Jastrzbski and I. Strzakowski
Lien : vide.pdf - | Article | Journal Format-PDF (152 K)

[49] : The positive charge neutralisation after bi-directional stress on MOS
capacitors, Pages 759-761
D. Ziane and A. El-Hdiy
Lien : vide.pdf - | Article | Journal Format-PDF (132 K)

[50] : The image force effect on the barrier height in MOS structures:
correlation of the corrected barrier height with temperature and the oxide
thickness, Pages 763-766
G. Salace, A. Hadjadj, C. Petit and Dj. Ziane
Lien : vide.pdf - | Journal Format-PDF (146 K)

[51] : Fundamental modification of gate silicon dioxide layer as a result of
lateral gettering of electrically active centres, Pages 767-770
V. Ya. Uritsky, S. E. Borisov and A. P. Krylov
Lien : vide.pdf - | Article | Journal Format-PDF (91 K)

[52] : State-of-the-art and future of silicon on insulator technologies,
materials, and devices, Pages 771-777
Sorin Cristoloveanu
Lien : vide.pdf - | Article | Journal Format-PDF (321 K)

[53] : Novel applications of organic based thin film transistors, Pages 779-782
Luisa Torsi
Lien : vide.pdf - | Article | Journal Format-PDF (145 K)

[54] : pH, pK and pNa detection properties of SiO2/Si3N4 ISFET chemical sensors,
Pages : 783-786
B. Hajji, P. Temple-Boyer, J. Launay, T. do Conto and A. Martinez
Lien : vide.pdf - | Article | Journal Format-PDF (118 K)

[55] : Silicon microsystem passivation for high-voltage applications in DNA
chips, Pages 787-789
I. Erill, R. Villa, P. Goudignon, L. Fonseca and J. A. Plaza
Lien : vide.pdf - | Article | Journal Format-PDF (119 K)

[56] : Silicon wafer oxygenation from SiO2 layers for radiation hard detectors,
Pages : 791-794
L. Fonseca, M. Lozano, F. Campabadal, C. Martínez, M. Ullán, B. S. Avset,
A. Ruzin, F. Lemeilleur and E. Nossarzewska-Orlowska
Lien : vide.pdf - | Article | Journal Format-PDF (354 K)

[57] : Oscillatory kinetics of anodic oxidation of silicon ¯ influence of the
crystallographic orientation, Pages 795-798
V. Parkhutik, F. Costa Gómez, L. Moya Tarazona and R. Fenollosa Esteve
Lien : vide.pdf - | Article | Journal Format-PDF (361 K)

[58] : Effect of traps in the transition Si/SiO2 layer on input characteristics
of SOI transistors, Pages 799-802
V. S. Lysenko, I. P. Tyagulski, Y. V. Gomeniuk and I. N. Osiyuk
Lien : vide.pdf - | Article | Journal Format-PDF (121 K)

[59] : Hole traps and charges in ion implanted MOS capacitors: sensitivity to
ionizing radiation, Pages 803-806
N. Sabaté, B. Garrido, J. R. Morante and G. Sarrabayrouse
Lien : vide.pdf - | Article | Journal Format-PDF (191 K)

[60] : Synthesis and characterisation of metal suboxides for gas sensors, Pages
807-810
J. Calderer, P. Molinàs, J. Sueiras, E. Llobet, X. Vilanova, X. Correig,
F. Masana and A. Rodríguez
Lien : vide.pdf - | Article | Journal Format-PDF (186 K)

[61] : Study of the positive charge buildup into buried oxide of SIMOX SOI
structure during bias¯temperature stress, Pages 811-814
I. Barchuk, V. Kilchytska and A. Nazarov
Lien : vide.pdf - | Article | Journal Format-PDF (161 K)

[62] : Smoothing, passivation and re-passivation of silicon surfaces by anodic
oxidation: a low thermal budget process, Pages 815-819
J. Rappich
Lien : vide.pdf - | Article | Journal Format-PDF (386 K)

[63] : Effect of macrostructure and composition of the top metal electrode on
properties of MIS gas sensors, Pages 821-824
V. G. Litovchenko, T. I. Gorbanyuk, A. A. Efremov and A. A. Evtukh
Lien : vide.pdf - | Article | Journal Format-PDF (614 K)

[64] : Anodic passivation of SiGe, Pages 825-827
J. Rappich and W. Füssel
Lien : vide.pdf - | Article | Journal Format-PDF (827 K)

[65] : Oxidation of Si1-x-yGexCy strained layers grown on Si: kinetics and
interface properties, Pages 829-832
A. Cuadras, B. Garrido, C. Bonafos, J. R. Morante, L. Fonseca and K.
Pressel
Lien : vide.pdf - | Article | Journal Format-PDF (356 K)

[66] : Electrical characterisation of Si3N4/SiO2 double layers on p-type 6H¯SiC,
Pages : 833-836
S. Berberich, P. Godignon, E. Morvan, L. Fonseca, J. Millán and H. L.
Hartnagel
Lien : vide.pdf - | Article | Journal Format-PDF (221 K)

[67] : N2 remote plasma cleaning of InP to improve SiNx:H/InP interface
performance, Pages 837-840
E. Redondo, M. N. Blanco, I. Mártil and G. González-Díaz
Lien : vide.pdf - | Article | Journal Format-PDF (108 K)

[68] : Growth of well-ordered silicon dioxide films on Mo(1 1 2), Pages 841-844
T. Schroeder, M. Adelt, B. Richter, M. Naschitzki, M. Bäumer and H. -J.
Freund
Lien : vide.pdf - | Article | Journal Format-PDF (301 K)

[69] : Interface quality study of ECR-deposited and rapid thermal annealed
silicon nitride Al/SiNx:H/InP and Al/SiNx:H/In0.53Ga0.47As structures by
DLTS and conductance transient techniques, Pages 845-848
H. Castán, S. Dueñas, J. Barbolla, E. Redondo, N. Blanco, I. Mártil and G.
González-Díaz
Lien : vide.pdf - | Article | Journal Format-PDF (199 K)

[70] : Characteristic photoluminescence band in Si+-implanted SiO2 grown on Si
wafer, Pages 849-854
T. S. Iwayama, D. E. Hole and I. W. Boyd
Lien : vide.pdf - | Article | Journal Format-PDF (118 K)

[71] : Dielectric and photoluminescence properties of silicon nanoparticles
embedded in a silica matrix, Pages 855-858
S. Charvet, R. Madelon and R. Rizk
Lien : vide.pdf - | Article | Journal Format-PDF (123 K)

[72] : Effect of implantation and annealing conditions on the photoluminescence
emission of Si nanocrystals ion beam synthesised in SiO2, Pages 859-862
M. Lopez, B. Garrido, C. Bonafos, O. González-Varona, A. Pérez-Rodríguez,
J. Montserrat and J. R. Morante
Lien : vide.pdf - | Article | Journal Format-PDF (259 K)

[73] : Transport process in thin SiO2 films with an embedded 2-D array of Si
nanocrystals, Pages 863-866
B. De Salvo, P. Luthereau, T. Baron, G. Ghibaudo, F. Martin, D. Fraboulet,
G. Reimbold and J. Gautier
Lien : vide.pdf - | Article | Journal Format-PDF (214 K)

[74] : Microstructure and electrical properties of gate SiO2 containing Ge
nanoclusters for memory applications, Pages 867-871
H. -J. Thees, M. Wittmaack, K. -H. Stegemann, J. v. Borany, K. -H. Heinig
and T. Gebel
Lien : vide.pdf - | Article | Journal Format-PDF (290 K)

[75] : A software for optical characterization of thin films for microelectronic
applications, Pages 873-875
N. Leinfellner, J. Ferré-Borrull and S. Bosch
Lien : vide.pdf - | Article | Journal Format-PDF (187 K)

[76] : New experiments on the electrodeposition of iron in porous silicon, Pages
877-879
C. Renaux, V. Scheuren and D. Flandre
Lien : vide.pdf - | Article | Journal Format-PDF (240 K)

[77] : Photoluminescence from pressure-annealed silicon dioxide and nitride
films, Pages 881-884
A. Misiuk, A. Iller, L. Rebohle, M. ukaszewicz and A. Kuda
Lien : vide.pdf - | Article | Journal Format-PDF (149 K)

[78] : Synthesis of luminescent particles in SiO2 films by sequential Si and C
ion implantation, Pages 885-888
O. González-Varona, C. Bonafos, M. López, B. Garrido, A. Pérez-Rodríguez,
J. R. Morante, J. Montserrat and R. Rodríguez
Lien : vide.pdf - | Article | Journal Format-PDF (233 K)

[79] : A novel method for the deposition of Si¯SiO2 superlattices, Pages 889-892
F. Gourbilleau, P. Voivenel, X. Portier and R. Rizk
Lien : vide.pdf - | Article | Journal Format-PDF (215 K)

[80] : Macroscopic dielectric response of the metallic particles embedded in host dielectric medium, Pages 893-895
L. G. Grechko, K. W. Whites, V. N. Pustovit and V. S. Lysenko
Lien : vide.pdf - | Article | Journal Format-PDF (107 K)

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