Article : [PAP309]

Titre : M. MEHROTRA, B.J. BALIGA, A planar MOS-gated AC switch structure, Electron Devices Meeting, 1995, pp. 349-352.

Cité dans :[99DIV104] Recherche sur l'auteur B. JAYANT BALIGA, juin 2001.

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Lien : private/MEHROTRA1.pdf - 290 Ko, 4 pages.
Source : Electron Devices Meeting, 1995., International
Pages : 349 - 352
Date : 10-13 Dec. 1995
ISBN : 0-7803-2700-4
Info : IEEE Catalog Number: 95CH35810
Info : Total Pages : 1026
References : 4
Accession_Number : 5237228

Abstract :
This paper reports the first discrete high-voltage vertical
MOS-gate controlled AC switch structure which exhibits
gate-controlled current saturation in the first and third
operating quadrants. The anode current can be switched on and off
within each quadrant of operation by application of appropriate
gate bias. The proposed structure was simulated, designed and
fabricated to achieve bi-directional blocking voltage of 3.5 kV
and exhibit FBSOA in the first and third quadrants with low
on-state voltage drop. Thus, the operation of proposed AC switch
has been theoretically and experimentally confirmed.

Subject_terms :
power semiconductor switches; MOS-controlled thyristors;
equivalent circuits; semiconductor device models; planar
MOS-gated AC switch structure; discrete HV AC switch;
gate-controlled current saturation; anode current; bi-directional
blocking voltage; FBSOA; 3.5 kV

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