Article : [PAP252]

Titre : M. NANDAKUMAR, B.J. BALIGA, M.S. SHEKAR, S. TANDON, A. REISMAN, Theoretical and experimental characteristics of the base resistance controlled thyristor (BRT)

Cité dans :[99ART133] M. NANDAKUMAR, B.J. BALIGA, The Base Resistance controlled Thyristor (BRT), a new MOS gated power thyristor, IEEE transaction on Electron Devices, pp. 1138-1141, 1991.

Stockage : Thierry LEQUEU
Lien : private/Nandakumar1.pdf - 708 Ko, 8 pages.
Source : Electron Devices, IEEE Transactions on
Pages : 1938 - 1945
Date : Aug. 1992
Volume : 39
Issue : 8
ISSN : 0018-9383
References : 10
CODEN : IETDAI
Accession_Number : 4251107

Abstract :
Described are the characteristics of a new MOS gated thyristor
structure called the base resistance controlled thyristor (BRT),
in which the turn-off of a thyristor built with an N drift region
is achieved by reducing the resistance of the p-base region under
MOS gate control. A p-channel MOSFET used to achieve turn-off is
formed in the N drift region. The device is designed so that,
when the p-channel MOSFET is switched on, holes are diverted from
the p-base region of the thyristor into the adjacent p/sup +/
region, raising the holding current of the thyristor above the
operating current level, and turning off the thyristor. Results
of extensive 2-D numerical simulations that have been performed
to demonstrate operation of this new device concept are
discussed. Experimental results on 600-V devices fabricated with
an IGBT process have corroborated theoretical predictions.
Current densities above 900 A/cm/sup 2/ have been turned off at
room temperature with a gate bias of -10 V.

Subject_terms :
2D numerical simulation; current density; PISCES simulation; MOS
gated thyristor structure; base resistance controlled thyristor;
BRT; MOS gate control; p-channel MOSFET; holding current; IGBT
process; gate bias; 600 V; current density;
metal-insulator-semiconductor devices; semiconductor device
models; thyristors

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