Article : [PAP247]

Titre : Theory and application of charge pumping for the characterization of Si-SiO/sub 2/ interface and near-interface oxide traps

Auteur : Paulsen, R.E.
Auteur : White, M.H - Dept. of Comput. Sci. & Electr. Eng., Lehigh Univ., Bethlehem, PA, USA

Stockage : Thierry LEQUEU
Lien : private/PAULSEN.pdf - 4 pages, ko.
Source : Electron Devices, IEEE Transactions on
Pages : 1213 - 1216
Date : July 1994
Volume : 41
Issue : 7
ISSN : 0018-9383
References : 14
CODEN : IETDAI
Accession_Number : 4747167

Abstract :
A generalized charge pumping model has been developed which
extends the use of charge pumping from a study of traps at the
Si-SiO/sub 2/ interface to a study of traps in the oxide. The
analytical model, based on tunneling theory, allows the spatial
distribution of near-interface oxide traps to be determined from
variable frequency charge pumping data. Profiling of
near-interface oxide traps in irradiated MOSFET's as well as
SONOS nonvolatile memory devices is presented.

Subject_terms :
silicon; silicon compounds; semiconductor-insulator boundaries;
electron traps; hole traps; tunnelling; radiation effects;
insulated gate field effect transistors; semiconductor storage;
semiconductor device models; Si-SiO/sub 2/ interface
characterisation; near-interface oxide traps; charge pumping
model; analytical model; tunneling theory; irradiated MOSFET;
SONOS nonvolatile memory devices; Si-SiO/sub 2/

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