J.-L. SANCHEZ, R. BERRIANE, J. JALADE, "Light Trigged thyristor with a MOS amplyfing gate : an example of galvanically insulated high voltage integrated switch", ISPSD'93, Monterey CA USA, Mai 1993, pp. 281-286.

J.-L. SANCHEZ, R. BERRIANE, J. JALADE, "Light Trigged thyristor with a MOS amplyfing gate : an example of galvanically insulated high voltage integrated switch", ISPSD'93, Monterey CA USA, Mai 1993, pp. 281-286. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [PAP009]

Titre : J.-L. SANCHEZ, R. BERRIANE, J. JALADE, Light Trigged thyristor with a MOS amplyfing gate : an example of galvanically insulated high voltage integrated switch, ISPSD'93, Monterey CA USA, Mai 1993, pp. 281-286.

Cité dans : [CONF007] ISPSD, Internationnal Symposium on Power Semiconductor Devices & Integrated Circuits
Cité dans :[99DIV112] Publications du LAAS, janvier 2000.

Auteur : Sanchez, J.-L.
Auteur : Berriane, R.
Auteur : Jalade, J - Lab. d'Autom. et d'Analyse des Syst., CNRS, Toulouse, France

Editors : Williams, R.K., Baliga, B.J.
Stockage : Thierry LEQUEU
Lien : private/Sanchez.pdf - 313 Ko.
Source : Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on
Pages : 281 - 286
Date : 18-20 May 1993
ISBN : 0-7803-1313-5
Info : Total Pages : xviii+324
Switches : MOS-Thyristor

Abstract :
Results for a light-triggered thyristor with an MOS amplifying
gate are used to illustrate the concept of functional integration
in the framework of high-voltage integrated switches. These
devices integrate a thyristor with an MOS amplifying gate, a
photodiode, a depletion-mode MOSFET, and a Zener diode.
Light-triggered thyristors with an MOS amplifying gate offer
interesting electrical characteristics: high blocking voltage,
excellent dV/dt immunity, and low on-stage voltage. The high
input impedance of the MOS gate allows the power device to be
triggered with a very low photocurrent induced by
light-emitting-diode illumination. This optical trigger makes it
possible to simplify the control circuits and to use these
devices for applications in industrial supply networks requiring
high galvanic insulation.

Subject_terms :
MOS amplifying gate; galvanically insulated high voltage
integrated switch; light-triggered thyristor; high-voltage
integrated switches; photodiode; depletion-mode MOSFET; Zener
diode; electrical characteristics; blocking voltage; dV/dt
immunity; on-stage voltage; input impedance; photocurrent;
light-emitting-diode illumination; optical trigger; industrial
supply networks; photoconducting devices; semiconductor switches;
thyristors

Accession_Number : 4710812

References : 8

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