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The SISC is a
workshop-style conference that provides a forum for device engineers, solid state
physicists, and materials scientists to discuss topics of common interest both formally
through invited and contributed presentations, and informally during a variety of events
including a poster presentation session.
The program includes talks from all areas of MOS science
and technology, including but not limited to the following:
| alternative and high-k gate dielectric materials |
| physics of thin dielectrics and their interfaces |
| gate-dielectric conduction and breakdown |
| silicon carbide and its interfaces |
| physical and electrical characterization of Si/SiO2 interfaces |
| micro-roughness measurement, modeling, and device-related effects |
| hot carrier, plasma damage and radiation effects |
| nitrogen-containing oxides and stacked interfaces |
| surface cleaning technology and effects on dielectrics and interfaces |
| novel oxidation, deposition, and etching techniques |
| theory of oxide and interface defects |
Preliminary List of Invited Speakers and Topics
| Dr. Eduard Cartier, IBM and IMEC
"Charge trapping, mobility degradation and reliability
of high-k gate stacks" |
| Professor Hiroshi Iwai, Tokyo Institute of Technology
"CMOS scaling and requested new technologies" |
| Professor Tsu-Jae King, UC Berkeley
"Gate material issues for high-k gate dielectrics" |
| Professor Jack C. Lee, UT Austin
"Effects of Interface States and Charge Trapping on the
Performance of High-K Gate Dielectrics Devices" |
| Professor Gerry Lucovsky, NC State
"Electronic structure at Si/high-k dielectronic interfaces" |
| Professor John Robertson, Cambridge
"Electronic structure and band offsets in high-k
dielectrics" |
| Dr. Hiroshi Yano, Nara Institute of
Science and Technology
"SiC MOSFETS and their interfaces" |
The 2002 SISC is sponsored by the Electron Devices Society of the IEEE,
and will be held immediately prior to the IEEE IEDM.
A Best Student Presentation award will be
given in memory of E.H. Nicollian, who made many important contributions to the field and
had a strong presence within the SISC.
This year, we have limited support available
from the National Science Foundation for student and young faculty
participation.
Deadline for Receipt of Extended Abstracts: August 5,
2002
Papers received after the deadline
will receive full consideration for presentation at the
2002 SISC.
Please see our Example Abstract, and
Example Review PDF
versions.
Here is the Word version which can
serve as a suitable template
for the abstracts.
To make an electronic submission, please e-mail and
provide the following:
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To: rwallace@unt.edu and
bellman@imit.kth.se |
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Subject: 2002 SISC submission |
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The first line of the email should give the exact title |
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The second line should list the
authors and affiliations |
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The third line should list the contact
author name, address, phone and fax numbers, and e-mail address |
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The fourth line should
specify if the paper is presented by a Student. |
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Attach a PDF file of the abstract, including the name and affiliation
of the authors.
Filename = "Abstract.pdf" |
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Attach an additional PDF file of the abstract
without the name or affiliation of the authors, Filename = "Review.pdf". The program committee will conduct a blind review of
the submissions, so references or text that might identify authorship should be hidden.
(This is easily accomplished by changing the identifying text font color
from black to white.) |
All abstracts must be received by August
5, 2002.
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