Recherche sur les mots clés : "LEVEL SHIFTER", octobre 1999.
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Titre : Recherche sur les mots clés : LEVEL SHIFTER, octobre 1999.
Cité dans : [DIV096] Recherches bibliographiques diverses, janvier 2019.
Auteur : Thierry LEQUEU
Date : octobre 1999
Vers : Low power level shifter.
Vers : Electronic level shifter for use in half-bridges operating at 13.56MHz.
Vers : Integrated level shifter for use in high frequency half-bridges.
Vers : Optical coupler and level shifter.
Vers : 5 to 130 V level shifter composed of thin gate oxide dual terminal drain PMOSFETs.
Voir_aussi :
[1] : [THESE033] F. SODDU, Etude et réalisation d'une commande de grille flottante pour un MBS, rapport de stage EIVL, Février-Juillet 1998.
From : COMPENDEX Réponse numéro 249 - © 1998 EI 17/02/98
Titre : LOW POWER LEVEL SHIFTER.
Author : Houghton, R.J.
Publication_Source : IBM Tech Discl Bull v 27 n 5 Oct 1984 p 2956-2957
CODEN : IBMTAA ISSN: 0018-8689
Publication_Year : 1984
Document_Type : Journal
Treatment_Code : Application
Language : English
Abstract :
The power dissipation problem that arises when shifting signals from higher to lower voltage while maintaining minimum circuit delay is
solved with a circuit having a transition-sensitive current source which 'powers up' only during the switching of the PNP current
switch.The operation of the circuit is described.
Accession Number : 85(1):5282
From : COMPENDEX Réponse numéro 66 - © 1998 EI 17/02/98
Titre : Electronic level shifter for use in half-bridges operating at 13.56MHz.
Author : Carter, D.R.H. (Cambridge Univ, Cambridge, Engl); McMahon, R.A.
Publication Source : Electronics Letters v 31 n 16 Aug 3 1995.p 1301-1302 CODEN: ELLEAK ISSN: 0013-5194
Publication Year : 1995
Document Type : Journal
Treatment Code : Theoretical
Language : English
Abstract :
An electronic level shifter is presented that enables operation of half-bridge circuits at frequencies up to 13.56MHz. It uses only a
single level shifting device and has timing circuitry on the high-side. Its operation is demonstrated in a half-bridge operating
at 13.56MHz with a supply voltage of 250V and power output of 85W.(Author abstract) 4 Refs.
Accession Number : 95(46):122
From : COMPENDEX Réponse numéro 22 - © 1998 EI 17/02/98
Titre : Integrated level shifter for use in high frequency half-bridges.
Author : Carter, D.R.H. (Cambridge Univ Engineering Dep, Cambridge, UK); McMahon, R.A.
Meeting_Title : Proceedings of the IEE Colloquium on New Developments in Power Semiconductor Devices.
Meeting_Location : London, UK - 21 Jun 1996
Publication Source : IEE Colloquium (Digest) n 146 1996.p 9/1-9/8 CODEN: DCILDN ISSN: 0963-3308
Meeting_Number : 45986
Document_Type : Journal
Treatment_Code : Application; Theoretical; Experimental
Abstract :
Increasing the operating frequency of switch-mode power conversion circuits is desirable as it permits a higher power density,
primarily through the reduction in the size of filter components. The half-bridge is a popular topology for converters though
difficulties are encountered when operating at high supply voltages and high frequencies due to the floating high-side power switch.
This paper describes the operation, design and analysis of an electronic integrated level shifter enabling operation of off-line
half-bridges in the multi-megahertz range. 5 Refs.
Accession_Number : 97(14):6517
From : COMPENDEX Réponse numéro 299 - © 1998 EI 17/02/98
Titre : Optical coupler and level shifter.
Author : MITCHELL CE (Paradyne Corp, Clearwater, Fla)
Publication_Source : EDN/EEE v 17 n 3 Feb 1 1972 p 55
Publication_Year : 1972
Language : English
Abstract :
The circuit shown uses optical coupling to provide complete electrical isolation between two digital circuits. Input signals
with peak amplitudes as low as plus 4 v can cause the output circuit tocane stat.Yee ++rcuit willhadeinput signals with pak ampitudes up
to plus 100v without breakdown. 52888
Accession_Number : 72(9):1071
From : COMPENDEX Réponse numéro 6 - © 1998 EI 17/02/98
Titre : 5 to 130 V level shifter composed of thin gate oxide dual terminal drain PMOSFETs.
Author : Mori, Kazuhisa (NEC Corp, Kanagawa, Jpn); Tanaka, Koji; Kobayashi,Kenya; Takahashi, Kenichiro; Takahashi, Mitsuasa
Meeting_Title : Proceedings of the 1997 9th International Symposium on Power Semiconductor Devices and ICs, ISPSD.
Meeting_Location : Weimer, Ger
Meeting_Date : 26 May 1997-29 May 1997
Meeting_Title : Proceedings of the 1997 9th International Symposium on Power Semiconductor Devices and ICs, ISPSD.
Organization : IEEE
Publication_Source : IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD) 1997.IEEE, Piscataway, NJ, USA,97CH36086.p 345-348
CODEN : PISDEK
Meeting_Number : 46957
Document_Type : Conference Article
Treatment_Code : Theoretical
Abstract :
A study of the novel 5 to 130 V level shifter with dual terminal drain PMOSFET (DTDPMOS) is described.To adopt this level shifter,
although the driver integrated circuit (IC) consists of both high and low voltage CMOS, the high voltage CMOS can be realized with the
same thin gate oxide as the low voltage CMOS.1 Refs.
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