M. COYAUD, J.-P. FERRIEUX, C. SCHAEFFER, E. COLLARD, A. LHORTE, J.-B. QUOIRIN, "Performances of SiC Schottky rectifier in power factor correction", Conference Record of the 2001 IEEE Industry Applications Conference, 2001, 36h IAS Annual Meeting, Chicago,
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Aticle : [ART562]
Titre : M. COYAUD, J.-P. FERRIEUX, C. SCHAEFFER, E. COLLARD, A. LHORTE, J.-B. QUOIRIN, Performances of SiC Schottky rectifier in power factor correction, Conference Record of the 2001 IEEE Industry Applications Conference, 2001, 36h IAS Annual Meeting, Chicago, IL USA, Vol. 1 , pp. 370-375.
Cité dans : [CONF017] IAS, World Conference on Industrial Applications of Electrical Energy, octobre 2003.
Cité dans : [DIV436] Recherche sur l'auteur Martin COYAUD, juillet 2004.
Cité dans :[ART549]
Auteur : Coyaud, Martin
Auteur : Ferrieux, J.-P.
Auteur : Schaeffer, C.
Auteur : Collard, E.
Auteur : Lhorte, A.
Auteur : Quoirin, J.-B.
Adresse : (a) Lab. d'Electrotech. de Grenoble, CNRS, St. Martin d'Heres, France;
Lien : mailto:Martin.coyaud@leg.ensieg.inpg.fr
Lien : mailto:Jean-Paul.Ferrieux@ujf-grenoble.fr
Lien : mailto:Christian.Schaeffer@leg.ensieg.inpg.fr
Source : Conference Record of the 2001 IEEE Industry Applications Conference, 2001. Thirty-Sixth IAS Annual Meeting.
Date : du 30 septembre au 4 octobre 2001
Lieu : Chicago, IL USA
Pages : 370 - 375
Volume : 1
Accession_Number : 7081562 INSPEC
Lien : private/COYAUD1.pdf - 149 Ko, 6 pages.
Lien : ART549.HTM#Bibliographie - référence [5]
Abstract :
This paper deals with performances of silicon carbide power Schottky diodes compared with state-of-the-art high speed rectifiers. With high breakdown voltage, high gap energy and good thermal conductivity, SiC is a serious challenger for a new power semiconductor material. Here, the authors analyze static and switching behaviors in order to evaluate advantages by using SiC Schottky diodes instead of silicon devices. They also compare the thermal behavior of each kind of diode. Then, they present results of power factor correction applications using Schottky diodes
Index_Terms :
AC-DC power convertors Schottky diodes power factor correction power semiconductor switches rectifying circuits semiconductor device measurement semiconductor device testing silicon compounds switching circuits SiC SiC Schottky rectifier breakdown voltage gap energy performance power Schottky diodes power factor correction static behavior switching behavior thermal conductivity
REFERENCES : 10
[1] : Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky Rectifiers,D.Defives,O. Noblanc, C. Dua, Ch. Brylinski, M. Bartula, et al. IEEE Trans. on electron devices, Vol 46, No 3, Mars 1999.
[2] : Predictive modeling of SiC-device power Schottky diode for investigations in power electronics Kneifel, M.; Silber, D.; Held, R. Applied Power Electronics Conference and Exposition, 1996. APEC '96. Conference Proceedings 1996., Eleventh Annual , Volume: 1 , 1996 Page(s): 239 -245 vol.1
[3] : Saturated Electron Drift Velocity in 6H Silicon Carbide, W.v. Muench and E. Pettenpaul, Journal of Applied Physics, Vol. 48, No. 4823, 1977.
[4] : Measurements of Electron Drift Velocity in 4H- and 6H-SiC, I.A. Khan and J.A. Cooper, Jr., International Conference on Silicon Carbide and III-V Nitride, Stockholm, Sweden, August 31-September 5, 1997.
[5] : Comparison of static, switching and thermal behavior between a 1500 V silicon and silicon carbide bipolar diodes. Nallet, F.; Planson, D.; Isoird, K.; Locatelli, M.L.; Chante, J.P. Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International, Volume: 1, 1999 Page(s): 195 -198 vol.1
[6] : Steady-state and transient forward current-voltage characteristics of 4H-silicon carbide 5.5 kV diodes at high and superhigh current densities. Dyakonova, N.V.; Ivanov, P.A.; Kozlov, V.A.; Levinshtein, M.E.; Palmour, J.W.; Rumyantsev, S.L.; Singh, R. Electron Devices, IEEE Transactions on , Volume: 46 Issue: 11 , Nov. 1999 Page(s): 2188-2194.
[7] : Static and Dynamic Characterization of Large-Area High-Current-Density SiC Schottky Diodes. Dallas T. Morisette, James A. Cooper, Michael R. Melloch, Gary M. Dolny, Praveen M. Shenoy, M. Zafrani and Jon Gladish. Electron Devices, IEEE Transactions on, Volume : 48 Issue : 2, Feb. 2001, Page(s) : 349-352
[8] : A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications. Elasser, A.; Kheraluwala, M.; Ghezzo, M.; Steigerwald, R.; Krishnamurthy, N; Kretchmer, J.; Chow, T.P. Industry Applications Conference, 1999. thirty-fourth IAS Annual Meeting. Conference Record of the 1999 IEEE , Volume: 1 , 1999 Page(s): 341 -345 vol.1.
[9] : Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized P.G.Neudeck, D.J.Larkin, J.A.Powell,. (NASA Lewis Res. Center USA) http://www.grc.nasa.gov/WWW/RT1995/2000/2510n.htm ,av.1996.
[10] : Analysis of Schottky Barrier Heights of Metal/SiC Contacts and Its Possible Application to High-Voltage Rectifying Devices. A. ITOH and H. MATSUNAMI,. Phys. Stat. Sol. 162,389 (1997), pp 389-408.
[--] : Datasheet MOS IRFBC40GLC http://www.irf.com
[--] : Bill Andreycak, Application note DN-44, UC3854A and 3854B Advanced power factor correction control Ics, SLUA177, Texas Instrument web site.
[1] : [DIV126] T. LEQUEU, Librairie des fichiers PDF de composants, octobre 2022.
Lien : IRFBC40LC.pdf - 168 Ko, 8 pages, Datasheet MOS IRFBC40GL.
Lien : SLUA177.pdf - 158 Ko, 4 pages, Bill Andreycak, Application note DN-44, UC3854A and 3854B Advanced power factor correction control Ics, SLUA177, Texas Instrument.
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