G. SPIAZZI, S. BUSO, M. CITRON, M. CORRADIN, R. PIEROBON, "Performance evaluation of a Schottky SiC power diode in a boost PFC application", IEEE Transactions on Power Electronics, Vol. 18, No. 6, November 2003, pp. 1249-1253.

G. SPIAZZI, S. BUSO, M. CITRON, M. CORRADIN, R. PIEROBON, "Performance evaluation of a Schottky SiC power diode in a boost PFC application", IEEE Transactions on Power Electronics, Vol. 18, No. 6, November 2003, pp. 1249-1253. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [ART549]

Titre : G. SPIAZZI, S. BUSO, M. CITRON, M. CORRADIN, R. PIEROBON, Performance evaluation of a Schottky SiC power diode in a boost PFC application, IEEE Transactions on Power Electronics, Vol. 18, No. 6, November 2003, pp. 1249-1253.

Cité dans :[REVUE512] IEEE Transactions on Power Electronics, Volume 18, Issue 6, November 2003.
Cité dans : [DIV367]  Les revues IEEE Transactions on Power Electronics, août 2013.

Auteur : Spiazzi, G.
Auteur : Buso, S.
Auteur : Citron, M.
Auteur : Corradin, M.
Auteur : Pierobon, R. - Dept. of Inf. Eng., Univ. of Padova, Italy;

Source : IEEE Transactions on Power Electronics
Date : Nov. 2003
Pages : 1249 - 1253
Volume : 18
Issue : 6
ISSN : 0885-8993
Lien : private/Spiazzi1.pdf - 5 pages, 485 Ko.
Accession_Number: 7789954 INSPEC

Abstract :
The performance of a 600 V, 4 A silicon carbide (SiC) Schottky diode (Infineon SDP04S60) is experimentally evaluated. A 300 W boost power factor corrector (PFC) with average current mode control is considered as a key application. Measurements of overall efficiency, switch and diode losses, and conducted electromagnetic interference (EMI) are performed both with the SiC diode and with two ultra-fast, soft-recovery, silicon power diodes, namely the RURD460 and the presented STTH5R06D. The paper compares the results to quantify the impact of the recovery current reduction provided by SiC diode on these key aspects of the converter behavior. Based on the experimental results, the paper shows that the use of SiC diodes in PFC designs may only be justified in high switching frequency applications.

Index_Terms :
Schottky diodes electric current control electromagnetic interference losses power convertors power factor correction power semiconductor switches silicon compounds 300 W 600 V Infineon SDP04S60 RURD460 STTH5R06D Schottky SiC power diode SiC average current mode control boost PFC application boost power factor corrector conducted EMI conducted electromagnetic interference converter behavior diode losses high switching frequency applications overall efficiency measurement recovery current reduction silicon carbide switch losses ultra-fast soft-recovery silicon power diodes

Bibliographie

References : 7
[1] : I. Zverev, M. Treu, H. Kapels, O. Hellmund, and R. Rupp, "SiC schottky rectifiers: Performance, reliability, and key application," in Proc. EPE'01 Conf., Graz, Aug. 27–29, 2001.
[2] : M. E. Levinshtein, et al., "High voltage SiC diodes with small recovery time," Electron. Lett., vol. 36, no. 14, pp. 1241-1242, July 6th, 2000.
[3] : W. Wright, et al., "Comparison of Si and SiC diodes during operation in three-phase inverter driving ac induction motor," Electron. Lett., vol. 37, no. 12, pp. 787-788, June 7, 2001.
[4] : F. Philippen and B. Burger, "A new high voltage schottky diode based on silicon carbide (SiC)," in Proc. EPE'01 Conf., Graz, Aug. 27–29, 2001.
[5] : M. Coyaud, et al., "Performances of SiC schottky rectifier in power factor correction," in Proc. 2001 IAS Annu. Meeting, Oct. 2001, pp. 370-375.
[6] : M. Trivedi and K. Shenai, "Hard- and soft-switching buck converter performance of high-voltage 4H-SiC and Si P-i-N diodes," in Proc. 2001 IAS Annu. Meeting, Oct. 2001, pp. 391-395.
[7] : L. Rossetto, S. Buso, and G. Spiazzi, "Conducted EMI issues in a 600-W single phase boost PFC design," IEEE Trans. Ind. Applicat., vol. 36, no. 2, pp. 578-585, Mar./Apr. 2000.

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