K. NASSIM, L. JOANNES, A. CORNET, S. DILHAIRE, E. SCHAUB,W. CLAEYS, "High-resolution interferometry and electronic speckle pattern interferometry applied to the thermomechanical study of a MOS power transistor", Microelectronics Journal, Volume 30, Issues

K. NASSIM, L. JOANNES, A. CORNET, S. DILHAIRE, E. SCHAUB,W. CLAEYS, "High-resolution interferometry and electronic speckle pattern interferometry applied to the thermomechanical study of a MOS power transistor", Microelectronics Journal, Volume 30, Issues Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [ART256]

Titre : K. NASSIM, L. JOANNES, A. CORNET, S. DILHAIRE, E. SCHAUB,W. CLAEYS, High-resolution interferometry and electronic speckle pattern interferometry applied to the thermomechanical study of a MOS power transistor, Microelectronics Journal, Volume 30, Issues 11, November 1999, pp. 1125-1128.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.
Cité dans :[REVUE308] Elsevier Science, Microelectronics Journal, Volume 30, Issue 11, Pages 1083-1172, November 1999.

Auteur : K. Nassim1 (a)
Auteur : L. Joannes (a)
Auetur : A. Cornet (a)
Auteur : S. Dilhaire (b)
Auteur : E. Schaub (b)
Auteur : W. Claeys (b)

Vers : Bibliographie
Adresse : (a) Laboratoire d'Optique Appliquée, FYAM, Université de Louvain, 1348 Louvain-La-Neuve, Belgium
Adresse : (b) Laboratoire de Caractérisation de Composants Electroniques, CPMOH and IXL, Université Bordeaux 1 33405 Talence Cedex, France
Adresse :
Tel. :
Fax. : +33-556-846-970
Source : Microelectronics Journal
Volume : 30
Issues : 11
Date : November 1999
Pages : 1125 - 1128
DOI :
PII : S0026-2692(99)00074-9
Lien : private/NASSIM1.pdf - 276 Ko, 4 pages.
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Abstract :
We present an original optical approach for the thermomechanical study of
electronic devices. We have applied it to image the deformation undergone by a
MOS power transistor due to its operation. This imaging method allows the
derivation of the three components of the displacement vector of each point of
the surface of the component while heated by Joule effect while running. The
method has a nanometric resolution for the displacement measurement and is based
on the analysis of the speckle structure of the device while illuminated by
coherent light. A high-resolution interferometer is also used to record the
transient behavior of the normal surface displacement of a point of the surface.
These optical approaches provide interesting quantitative information about
strain and stress in electronic power devices and allow testing of finite
element simulations. These techniques can be compared to Moiré thermomechanical
studies but with better resolution and sensitivity.

Author_Keywords : Interferometry; Michelson; Speckle; ESPI; Power transistor; Power devices

Article Outline
1. Introduction
2. Optical measurement of the surface displacement
2.1. High resolution interferometry
2.2. Electronic speckle pattern interferometry
3. Thermomechanical study of a MOS power transistor
4. Conclusion

Bibliographie

Références : 4
[1] : C. Wykes, Use of electronic speckle pattern interferometry (ESPI) in the measurement of static and dynamic surface displacement. Optical Engineering 21 3 (1982), pp. 400¯406. Abstract-INSPEC | Abstract-Compendex
[2] : R. Jones and C. Wykes. Holographic and Speckle interferometry, Cambridge University Press, Cambridge (1989).
[3] : W. Claeys, S. Dilhaire and V. Quintard, Laser probing of thermal behaviour of electronic components and its application in quality and reliability testing. Microelectronic Engineering 24 (1994), pp. 411¯420. Abstract-INSPEC | Abstract-Compendex
[4] : Y. Ishii, J. Chen and K. Murata, Digital phase-measuring interferometry with a tunable laser diode. Optical Letters 12 (1987), pp. 233¯235. Abstract-INSPEC | Abstract-EMBASE

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